Patents by Inventor Tatsuro Nagahara

Tatsuro Nagahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220076941
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.
    Type: Application
    Filed: November 16, 2021
    Publication date: March 10, 2022
    Inventors: Yukifumi YOSHIDA, Manabu OKUTANI, Shuichi YASUDA, Yasunori KANEMATSU, Dai UEDA, Song ZHANG, Tatsuro NAGAHARA, Takafumi KINUTA
  • Patent number: 11260431
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.
    Type: Grant
    Filed: August 25, 2020
    Date of Patent: March 1, 2022
    Inventors: Yukifumi Yoshida, Manabu Okutani, Shuichi Yasuda, Yasunori Kanematsu, Dai Ueda, Song Zhang, Tatsuro Nagahara, Takafumi Kinuta
  • Publication number: 20220056383
    Abstract: To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. The present invention is a substrate cleaning solution comprising a polymer (A), an alkaline component (B), and a solvent (C), provided that the alkaline component (B) does not comprise ammonia.
    Type: Application
    Filed: December 11, 2019
    Publication date: February 24, 2022
    Inventors: Takafumi KINUTA, Tatsuro NAGAHARA, Yuko HORIBA
  • Publication number: 20220059344
    Abstract: [Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] The present invention is a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C).
    Type: Application
    Filed: December 12, 2019
    Publication date: February 24, 2022
    Inventors: Takafumi KINUTA, Tatsuro NAGAHARA, Yuko HORIBA
  • Publication number: 20210403829
    Abstract: [Problem] To provide a semiconductor aqueous composition capable of preventing a pattern collapse and suppressing a bridge defect. [Means for Solution] A semiconductor aqueous composition comprising a single or plurality of surfactant(s) having a monovalent anion part represented by formula (I): Chain 1-X1—X2-Chain 2 (I) wherein, X1 and X2 are each independently —C(=0)- or —S(=0)2-, and Chain 1 and Chain 2 are each independently a linear or branched C1-20 alkyl, wherein one or more H in said C1-20 alkyl are replaced by F, and one or more methylenes in Chain 1 may be replaced by -0-, with the proviso that Chain 1 and Chain 2 may be bonded to form a ring structure) and a monovalent cation part other than hydrogen ion; and water.
    Type: Application
    Filed: October 21, 2019
    Publication date: December 30, 2021
    Inventors: Kazuma YAMAMOTO, Maki ISHII, Tatsuro NAGAHARA
  • Patent number: 11211241
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: December 28, 2021
    Inventors: Yukifumi Yoshida, Manabu Okutani, Shuichi Yasuda, Yasunori Kanematsu, Dai Ueda, Song Zhang, Tatsuro Nagahara, Takafumi Kinuta
  • Patent number: 11169443
    Abstract: There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. There is provided a gap filling composition including a gap filling compound, an organic solvent, and as required, water, the gap filling compound having a certain structure and containing hydroxyl groups, carboxyl groups, or amino groups intramolecularly. There is provided a pattern forming method using a low molecular weight compound.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: November 9, 2021
    Assignee: Merck Patent GmbH
    Inventors: Xiaowei Wang, Tatsuro Nagahara
  • Patent number: 11156920
    Abstract: The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.
    Type: Grant
    Filed: November 21, 2017
    Date of Patent: October 26, 2021
    Assignee: Merck Patent GmbH
    Inventors: Kazuma Yamamoto, Maki Ishii, Tomoyasu Yashima, Tatsuro Nagahara
  • Publication number: 20200384510
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.
    Type: Application
    Filed: August 25, 2020
    Publication date: December 10, 2020
    Inventors: Yukifumi YOSHIDA, Manabu OKUTANI, Shuichi YASUDA, Yasunori KANEMATSU, Dai UEDA, Song ZHANG, Tatsuro NAGAHARA, Takafumi KINUTA
  • Publication number: 20200319556
    Abstract: [Subject] There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. [Solution means] There is provided a gap filling composition including a polymer having a certain structure and an organic solvent. There is provided a pattern forming method using a certain polymer.
    Type: Application
    Filed: May 29, 2017
    Publication date: October 8, 2020
    Inventors: Xiaowei Wang, Tatsuro NAGAHARA
  • Patent number: 10792712
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 6, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Yukifumi Yoshida, Manabu Okutani, Shuichi Yasuda, Yasunori Kanematsu, Dai Ueda, Song Zhang, Tatsuro Nagahara, Takafumi Kinuta
  • Patent number: 10670969
    Abstract: [Problem] To provide a composition, which is a reverse pattern formation composition comprising an aqueous solvent having little influence on a resist pattern, and which is excellent in flatness and filling properties after coating and has excellent etching resistance. Furthermore, a method for forming a pattern using the same is provided. [Means for Solution] A reverse pattern formation composition comprising a polysiloxane compound comprising a repeating unit having a nitrogen-containing group and a solvent comprising water, and a method for forming a fine pattern using the same.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: June 2, 2020
    Assignee: AZ Electronic Materials (Luxembourg) S.A.R.L.
    Inventors: Xiaowei Wang, Tatsuro Nagahara
  • Publication number: 20190377263
    Abstract: The present invention relates to a new lithography composition, the forming of resist patterns using the lithography composition, and a semiconductor device manufacturing method using the lithography composition in a photolithography method.
    Type: Application
    Filed: November 21, 2017
    Publication date: December 12, 2019
    Inventors: Kazuma YAMAMOTO, Maki ISHII, Tomoyasu YASHIMA, Tatsuro NAGAHARA
  • Publication number: 20190366394
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: Yukifumi YOSHIDA, Manabu OKUTANI, Shuichi YASUDA, Yasunori KANEMATSU, Dai UEDA, Song ZHANG, Tatsuro NAGAHARA, Takafumi KINUTA
  • Publication number: 20190371599
    Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.
    Type: Application
    Filed: May 30, 2019
    Publication date: December 5, 2019
    Inventors: Yukifumi YOSHIDA, Manabu OKUTANI, Shuichi YASUDA, Yasunori KANEMATSU, Dai UEDA, Song ZHANG, Tatsuro NAGAHARA, Takafumi KINUTA
  • Patent number: 10494261
    Abstract: An inorganic polysilazane resin of the present invention has a Si/N ratio (i.e. a ratio of contained silicon atoms to contained nitrogen atoms) of 1.30 or more. The inorganic polysilazane resin having such a high Si content can be produced by, for example, a method in which an inorganic polysilazane compound containing both Si—NH and Si—Cl is heated to react NH with Cl, a method in which a silazane oligomer (polymer) that leaves no Si—Cl bond is synthesized and a dihalosilane is added to the synthesized silazane oligomer (polymer) to perform a thermal reaction, and the like. A siliceous film can be formed by, for example, applying a coating composition containing the inorganic polysilazane resin onto a base plate and then dried and the dried product is then oxidized by bringing the dried product into contact with water vapor or hydrogen peroxide vapor and water vapor under heated conditions.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: December 3, 2019
    Assignee: Ridgefield Acquisition
    Inventors: Takashi Fujiwara, Ralf Grottenmueller, Takashi Kanda, Tatsuro Nagahara
  • Patent number: 10451974
    Abstract: The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 22, 2019
    Assignee: AZ Electronic Materials (Luxembourg) S.a.r.l.
    Inventors: Kazuma Yamamoto, Yuriko Matsuura, Tomoyasu Yashima, Tatsuro Nagahara
  • Publication number: 20190250515
    Abstract: The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.
    Type: Application
    Filed: June 19, 2017
    Publication date: August 15, 2019
    Inventors: Kazuma YAMAMOTO, Yuriko MATSUURA, Tomoyasu YASHIMA, Tatsuro NAGAHARA
  • Publication number: 20190204747
    Abstract: [Problem] To provide a composition, which is a reverse pattern formation composition comprising an aqueous solvent having little influence on a resist pattern, and which is excellent in flatness and filling properties after coating and has excellent etching resistance. Furthermore, a method for forming a pattern using the same is provided. [Means for Solution] A reverse pattern formation composition comprising a polysiloxane compound comprising a repeating unit having a nitrogen-containing group and a solvent comprising water, and a method for forming a fine pattern using the same.
    Type: Application
    Filed: July 3, 2017
    Publication date: July 4, 2019
    Applicant: Merck Patent GmbH
    Inventors: Xiaowei WANG, Tatsuro NAGAHARA
  • Publication number: 20190113848
    Abstract: There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. There is provided a gap filling composition including a gap filling compound, an organic solvent, and as required, water, the gap filling compound having a certain structure and containing hydroxyl groups, carboxyl groups, or amino groups intramolecularly. There is provided a pattern forming method using a low molecular weight compound.
    Type: Application
    Filed: April 3, 2017
    Publication date: April 18, 2019
    Inventors: Xiaowei WANG, Tatsuro NAGAHARA