Abstract: A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.

Abstract: A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.

Abstract: A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

Abstract: A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

Abstract: A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

Abstract: A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

Abstract: A semiconductor device according to an embodiment includes a semiconductor layer, a metal layer, and a bonding layer provided between the semiconductor layer and the metal layer, the bonding layer including a plurality of silver particles, and the bonding layer including a region containing gold existing between the plurality of silver particles.

Abstract: A semiconductor device according to an embodiment includes: an insulating substrate having a first metal layer and a second metal layer on a surface of the insulating substrate; a semiconductor chip including an upper electrode and a lower electrode, the upper electrode being electrically connected to the first metal layer, the lower electrode being electrically connected to the second metal layer; a first main terminal including a first end and a second end, the first end being electrically connected to the first metal layer; a second main terminal including a third end and a fourth end, the third end being electrically connected to the second metal layer; a first detection terminal being electrically connected between the first end and the second end of the first main terminal; and a second detection terminal being electrically connected to the first metal layer.

Abstract: Provided is a terminal plate according to an embodiment including: a first plate portion for being connected to a first semiconductor element; a second plate portion for being connected to a second semiconductor element; a third plate portion provided above the first plate portion and the second plate portion; a first connecting portion provided between the first plate portion and the third plate portion and connecting the first plate portion and the third plate portion; a second connecting portion provided between the second plate portion and the third plate portion and connecting the second plate portion and the third plate portion; a fourth plate portion provided above the first plate portion and the second plate portion and provided on the opposite side of the third plate portion with interposing the first and second plate portions; a third connecting portion provided between the first plate portion and the fourth plate portion and connecting the first plate portion and the fourth plate portion; a fourth

Abstract: A semiconductor device including a main board; a first board provided on the main board; first and second semiconductor elements provided on the first board; a first positive terminal provided on the first board; a first negative terminal provided on the first board; a first output terminal provided on the first board; a second board provided on the main board; third and fourth semiconductor elements provided on the second board; a second positive terminal provided on the second board; a second negative terminal provided on the second board; a second output terminal provided on the second board; a first terminal plate connecting the first positive terminal and the second positive terminal, a second terminal plate connecting the first negative terminal and the second negative terminal, and a third terminal plate connecting the first output terminal and the second output terminal.

Abstract: Provided is a semiconductor device according to an embodiment including: a main board; a first board provided on the main board; a second board provided on the main board; a first electrode member provided on the first board and having a first planar portion; a second electrode member provided on the first board and having a second planar portion; a third electrode member provided on the first board and having a third planar portion; a first semiconductor element provided on the first electrode member and having a first electrode and a second electrode; a second semiconductor element provided on the second electrode member and having a third electrode and a fourth electrode; a first wire electrically connecting the second electrode and the second electrode member; a second wire electrically connecting the fourth electrode and the third electrode member; a fourth electrode member provided on the second board and having a fourth planar portion; a fifth electrode member provided on the second board and having a

Abstract: Provided is a terminal plate according to an embodiment including: a first plate portion for being connected to a first semiconductor element; a second plate portion for being connected to a second semiconductor element; a third plate portion provided above the first plate portion and the second plate portion; a first connecting portion provided between the first plate portion and the third plate portion and connecting the first plate portion and the third plate portion; a second connecting portion provided between the second plate portion and the third plate portion and connecting the second plate portion and the third plate portion; a fourth plate portion provided above the first plate portion and the second plate portion and provided on the opposite side of the third plate portion with interposing the first and second plate portions; a third connecting portion provided between the first plate portion and the fourth plate portion and connecting the first plate portion and the fourth plate portion; a fourth

Abstract: By hot pressing a cold rolled &bgr; type titanium alloy which has not been subjected to solution heat treatment into a predetermined shape, it is possible to obtain a part with a cold rolled metallurgical texture in its approximately central portion in the thickness direction, and a solution heat treatment metallurgical texture in its other portions, and a golf club head is manufactured using this part as a face member.

Abstract: A metal wood golf club head including a sole plate and a weight body which is fastened to this sole plate via a spacer. A recess which accommodates the spacer and weight body is formed in a portion of the sole plate, an undercut part is formed in the inside circumferential portion of the recess, and a circumferential groove is formed in the outer circumferential portion of the weight body. When the weight body is press-fitted in the recess with the spacer in between, the spacer is forcibly engaged with the undercut part and circumferential groove, thus allowing the weight body to be firmly fastened to the recess of the sole plate of the club head.

Abstract: By hot pressing a cold rolled &bgr; type titanium alloy which has not been subjected to solution heat treatment into a predetermined shape, it is possible to obtain a part with a cold rolled metallurgical texture in its approximately central portion in the thickness direction, and a solution heat treatment metallurgical texture in its other portions, and a golf club head is manufactured using this part as a face member.

Abstract: In construction of a wood type golf club head, its main body made of a material unsuited for plastic deformation such as FRP and its and hosel made of a material suited for plastic deformation such as metal are separably coupled to each other. Subtle adjustment of ball striking characteristics such as loft and lie angles can be practiced quite freely independently of the material used for the main body.

Abstract: In construction of a golf club head made of metal or fiber reinforced plastics, its hosel is configured such that rigidity in the toe-to-heel direction is larger than that in the ball-shooting direction. During swinging of the club to impact a ball, not only does the shaft of the club flex but also its hosel. This double flexing results in increased impact on the ball. In addition, the specified rigidity distribution avoids undesirable toe-down deformation which tends to cause mishitting of the ball.