Abstract: A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less.

Abstract: A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.

Abstract: A method for cutting a glass plate includes a first step of radiating a laser beam onto a front surface of the glass plate and forming a crack in the glass plate. The laser beam has a wavelength of 5000-11000 nm and becomes a linear beam at the front surface of the glass plate. The linear beam is formed into a shape conforming to a predetermined cut line, has a length greater than or equal to 10 mm along the predetermined cut line and a width less than or equal to 3 mm, and has an intensity distribution substantially uniform along the predetermined cut line. In the first step, a position of the linear beam in the front surface of the glass plate is fixed for a prescribed time, and at least one end part of the linear beam is located at an outer peripheral part of the glass plate.

Abstract: A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer The second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and has in-plane orientation.

Abstract: Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not less than 35 atomic % and not more than 55 atomic %. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In+Zn+Ga) is set to be 30 atomic % or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.

Abstract: A liquid crystal display device includes: a first polarizing film; a first retardation region; a liquid crystal cell which includes a liquid crystal layer sandwiched between a pair of substrates, in which liquid crystal molecules in the liquid crystal layer are oriented parallel to surfaces of the pair of substrates at a time of black display; and a second polarizing film, a slow axis of the first retardation region is arranged orthogonally or parallel to a long axis of the liquid crystal molecule at a surface of the liquid crystal layer at a side of the substrate of the liquid crystal cell adjacent to the first retardation region in a state of no application of voltage, the liquid crystal cell operates in a lateral electric field mode, and the first retardation region includes a first retardation layer and a second retardation layer as defined herein.

Abstract: A method of cutting a strengthened glass including a front surface layer and a back surface layer in each of which a compression stress remains, respectively, and an intermediate layer formed between the front surface layer and the back surface layer, in which a tensile stress remains, the method includes: cutting the strengthened glass plate by heating the intermediate layer at an irradiation area of a laser beam at a temperature less than or equal to an annealing point while transmitting 70.0% to 99.8% of the laser beam having a wavelength between 800 to 1100 nm injected into the front surface and moving the irradiation area of the laser beam at a speed greater than or equal to 1.0 mm/sec, so that a crack, which penetrates the strengthened glass plate in a thickness direction of the strengthened glass plate, follows the irradiation area.

Abstract: A method of cutting a strengthened glass including, a front surface layer and a back surface layer each having a remaining compression stress, respectively, and an intermediate layer formed between the front surface layer and the back surface layer, having an internal remaining tensile stress, the method includes heating the intermediate layer at an irradiation area of a laser beam at a temperature less than or equal to an annealing point to generate a tensile stress less than a value of the internal remaining tensile stress of the intermediate layer or a compression stress at the center of the irradiation area for suppressing the propagation of the crack.

Abstract: Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other.

Abstract: Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

Abstract: Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1?n3?n2 and n2?n3?n1.

Abstract: Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.

Abstract: A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower.

Abstract: Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.

Abstract: An output voltage monitoring circuit monitors an output voltage of a capacitor charging circuit. A first sample-and-hold circuit samples and holds a voltage of a connection point of a primary coil of a transformer and a switching transistor. A first monitoring comparator compares output of the first sample-and-hold circuit with a predetermined first reference voltage. When the output of the first sample-and-hold circuit exceeds the first reference voltage, a signal processor executes predetermined signal processing. The first sample-and-hold circuit starts a sampling period after a predetermined first time has elapsed after the switching transistor is turned OFF. When a voltage drop across a detection resistor reaches a third reference voltage, the first sample-and-hold circuit ends the sampling period.

Abstract: An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower.

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Abstract: A channel layer is formed on a substrate by using an oxide semiconductor and then a sacrificial layer of an oxide containing In, Zn and Ga and representing an etching rate greater than the etching rate of the oxide semiconductor is formed on the channel layer. Thereafter, a source electrode and a drain electrode are formed on the sacrificial layer and the sacrificial layer exposed between the source electrode and the drain electrode is removed by means of wet etching.

Abstract: A field effect transistor is provided including a gate electrode (for example, 15), a source electrode (13), a drain electrode (14) and a channel layer (11) to control current flowing between the source electrode (13) and the drain electrode (14) by applying a voltage to the gate electrode (15). The channel layer (11) is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.

Abstract: In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.