Abstract: A wafer placement table includes a ceramic base, a cooling base, and a bonding layer. The ceramic base includes an outer peripheral part having an annular focus ring placement surface on an outer peripheral side of a central part having a circular wafer placement surface. The cooling base contains metal. The bonding layer bonds the ceramic base with the cooling base. The outer peripheral part of the ceramic base has a thickness of less than or equal to 1 mm and does not incorporate an electrode.

Abstract: A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.

Abstract: An electrostatic chuck includes: a disk-shaped ceramic plate having a wafer placement surface on a surface thereof; an electrostatic electrode embedded in the ceramic plate; and gas grooves that are divided in a plurality of zones when the ceramic plate is seen from above and each of which is independently provided in the wafer placement surface so as to extend from one to the other of a pair of gas supply/discharge openings for a corresponding one of the zones. A pattern in which a gas is supplied to each of the gas grooves provided for a corresponding one of the zones is selectable between a first pattern in which the gas flows from one to the other of the pair of gas supply/discharge openings and a second pattern in which the gas flows from the other to the one of the pair of gas supply/discharge openings.

Abstract: A focus ring placement table includes an annular ceramic heater on which a focus ring is placed, a metal base, an adhesive element bonding the metal base and the ceramic heater, an inner-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an inner peripheral portion of the adhesive element, and an outer-peripheral-side protective element disposed between the metal base and the ceramic heater and bonded to an outer peripheral portion of the adhesive element. A coefficient of thermal expansion of the adhesive element is equal to or smaller than a coefficient of thermal expansion of the inner-peripheral-side protective element and is equal to or greater than a coefficient of thermal expansion of the outer-peripheral-side protective element.

Abstract: A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.

Abstract: A wafer placement table includes a ceramic substrate that has a wafer placement surface, a first electrode that is embedded in the ceramic substrate, a first power supply terminal that is inserted from a surface of the ceramic substrate opposite the wafer placement surface toward the first electrode, a first joint that joins the first electrode and the first power supply terminal to each other and a second electrode that is disposed between the wafer placement surface and the first electrode in the ceramic substrate. A linear portion that extends in the ceramic substrate from a position on the first electrode opposite the first joint to the wafer placement surface is composed of material of the ceramic substrate.

Abstract: A wafer placement table is a ceramic sintered body with a surface provided with multiple projections that support a wafer. Of the surface of the ceramic sintered body, the area provided with no projection is a mirror surface which has a surface roughness Ra of 0.1 ?m or less. The projections are formed of an aerosol deposition film or a thermal spray film made of the same material as for the ceramic sintered body.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which a resistance heating element is embedded; a hollow ceramic shaft having an upper end bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; and a shaft heater embedded in a side wall near an upper end of the ceramic shaft.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating element is embedded; a hollow ceramic shaft bonded to the surface on an opposite side of a wafer placement surface of the ceramic plate; a conductive film provided in an axial direction to extend on the internal circumferential surface of the ceramic shaft; a recessed section provided to reach a terminal of the resistance heating element from the surface on the opposite side of the wafer placement surface of the ceramic plate, the recessed section having a bottom surface to which a lower surface of the terminal is exposed and a lateral surface to which a surface of the conductive film is exposed; and a connection member which is filled in the recessed section, and electrically connects the lower surface of the terminal and the surface of the conductive film.

Abstract: An electrostatic chuck heater includes an electrostatic chuck including an electrostatic electrode embedded in a ceramic sintered body, a cooling member cooling the electrostatic chuck, and a heater layer disposed between the electrostatic chuck and the cooling member and including a plurality of metal layers embedded therein in multiple stages, the metal layers including resistance heating element layers. The heater layer includes a ceramic insulating layer with a thickness of 2 ?m or more and 50 ?m or less between the metal layers.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating elements are embedded; a hollow ceramic shaft bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; multiple vertical grooves provided in an internal circumferential surface of the ceramic shaft in an axial direction; conductive films provided in the multiple vertical grooves, respectively; and connection members that each electrically connect a terminal of the resistance heating elements to a corresponding one of the conductive films.

Abstract: A ceramic heater with a shaft includes a ceramic plate in which an RF electrode and a resistance heating element are embedded; a hollow ceramic shaft provided on a surface on an opposite side of a wafer placement surface of the ceramic plate; an RF power supply rod which is housed in an inner space of the ceramic shaft, and a heating element power supply rod which is housed in the inner space of the ceramic shaft, wherein an outer circumferential surface of a portion of at least one of the RF power supply rod and the heating element power supply rod is covered with an insulating thin film which is an aerosol deposition film or a thermal spray film, the portion being located in the inner space of the ceramic shaft.

Abstract: An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.

Abstract: A wafer placement table includes: an electrostatic chuck that is a ceramic sintered body in which an electrode for electrostatic adsorption is embedded; a cooling member which is bonded to a surface on an opposite side of a wafer placement surface of the electrostatic chuck, and cools the electrostatic chuck; a hole for power supply terminal, the hole penetrating the cooling member in a thickness direction; and a power supply terminal which is bonded to the electrode for electrostatic adsorption from the surface on the opposite side of the wafer placement surface of the electrostatic chuck, and is inserted in the hole for power supply terminal. The outer peripheral surface of a portion of the power supply terminal is covered with an insulating thin film that is formed by coating of an insulating material, the portion being inserted in the hole for power supply terminal.

Abstract: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.

Abstract: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.

Abstract: A thermal spray powder is provided that contains, as constituent elements, a first element selected from W and Mo; a second element selected from Co, Ni, and Fe; a third element selected from C and B; and a fourth element formed of Si. The amount of the second element in the thermal spray powder is 40% by mole or less. The mole ratio of the fourth element to the second element in the thermal spray powder is 0.002 or greater and 0.03 or less. The thermal spray powder has a crystal phase containing Co, Ni, or Fe; W; and C or a crystal phase containing Co, Ni, or Fe; W or Mo; and B. In an X-ray diffraction spectrum of the thermal spray powder, the peak intensity attributed to Co, Ni, or Fe is at most 0.1 times the largest peak intensity in the same X-ray diffraction spectrum.

Abstract: A thermal spray powder is provided that contains, as constituent elements, a first element selected from W and Mo; a second element selected from Co, Ni, and Fe; a third element selected from C and B; and a fourth element selected from Al and Mg. The amount of the second element in the thermal spray powder is 20% by mole or greater. The mole ratio of the fourth element to the second element in the thermal spray powder is 0.05 or greater and 0.5 or less. The thermal spray powder has a crystal phase containing Co, Ni, or Fe; W; and C or a crystal phase containing Co, Ni, or Fe; W or Mo; and B. In an X-ray diffraction spectrum of the thermal spray powder, the peak intensity attributed to Co, Ni, or Fe is at most 0.1 times the largest peak intensity in the same X-ray diffraction spectrum.

Abstract: A wafer susceptor includes a conductive member attached to a surface of a plate, a through-hole penetrating through the plate and the conductive member, a screw hole formed in a conductive-member penetrating portion of the through-hole, a stopper surface formed in the conductive member, an insulation pipe screwed into the screw hole, and an insulating sealing member arranged between a plate-facing surface of the insulation pipe and the plate, wherein, with a contact surface of the insulation pipe coming into contact with the stopper surface of the conductive member, the insulation pipe is prevented from further advancing into the screw hole, a fore end surface of a sealing-member support portion of the insulation pipe is positioned at a predetermined position where the fore end surface does not contact the plate, and the sealing member is pressed between the plate-facing surface of the insulation pipe and the plate.