Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels, each including a photo-electric converter, are arrayed to form rows and columns; signal lines respectively corresponding to the columns of the pixel array; load transistors respectively corresponding to the signal lines; and capacitances respectively corresponding to the load transistors. Each signal line is connected to the pixels of the corresponding column. Each capacitance includes a first electrode and a second electrode. When viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter, the first electrode is arranged within a region which is surrounded by (i) the adjacent signal lines which are arranged closest to each other, (ii) the pixel array, and (iii) a virtual line connecting end portions of the adjacent signal lines, so as to not overlap the adjacent signal lines.

Abstract: A photoelectric conversion device includes visible-light filters, infrared light filters, pixels arrayed in a row direction and a column direction, and wiring layers disposed between the pixels and visible-light filters and infrared light filters. The pixels include first pixels disposed corresponding to the visible-light filters, and second pixels disposed corresponding to the infrared light filters. The shape and size of the first pixels and second pixels is the same in planar view. The second pixels are disposed between adjacent pixels of the first pixels in the row direction, column direction, and diagonal directions. At least one wiring layer of the wiring layers defines apertures corresponding to photoelectric conversion regions at the first pixels and second pixels. Apertures corresponding to photoelectric conversion regions of first pixels and apertures corresponding to photoelectric conversion regions of second pixels are of the same shape and size in planar view.

Abstract: A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.

Abstract: An image sensing device characterized by including: a pixel array; a plurality of first holding capacitances; a plurality of second holding capacitances; a first reference power supply pattern; and a second reference power supply pattern, wherein at least part of the first reference power supply pattern is arranged in a first region where reference power supply electrodes of the plurality of first holding capacitances are arrayed, at least part of the second reference power supply pattern is arranged in a second region where reference power supply electrodes of the plurality of second holding capacitances are arrayed, and the first reference power supply pattern and the second reference power supply pattern are isolated in a region including the first region and the second region.

Abstract: A solid-state imaging apparatus includes a plurality of pixels arranged in a matrix in one or more rows and one or more columns, wherein each pixel includes a photoelectric conversion element converting light into an electric charge and outputs a read out signal based on the converted electric charge, a plurality of capacitors arranged correspondingly to each of the columns to hold the signal output from the plurality of pixels, and a horizontal scanning circuit for sequentially reading out the signals held by the plurality of capacitors, by sequentially transferring data pulse in response to a clock pulse. The horizontal scanning circuit includes a mask signal input portion to which a mask signal is input.

Abstract: An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line.

Abstract: An image sensing apparatus comprises a transfer block including a first transfer unit and a second transfer unit, wherein the first transfer unit includes a first impedance converter which transfers a first signal to the output unit, and the first transfer unit transfers, as a third signal, a difference signal between a first offset of the first impedance converter and a signal obtained by superimposing the first offset on the first signal, the second transfer unit includes a second impedance converter which transfers a second signal to the output unit, and the second transfer unit transfers, as a fourth signal, a difference signal between a second offset of the second impedance converter and a signal obtained by superimposing the second offset on the second signal, and the output unit calculates a difference between the third signal and the fourth signal, generating and outputting an image signal.

Abstract: An image sensing device comprises a readout unit, an output amplifier, and a horizontal scanning unit, wherein the horizontal scanning unit scans a plurality of column signal holding circuits in a plurality of holding blocks in the readout unit in a direction along a row, in each holding block, a first operation in which the signal held in a first holding unit is transferred to a second holding unit via a transfer switch is performed, and subsequently, a second operation in which the signal held in the second holding unit is transferred to the output amplifier, and a third operation in which a signal output from a pixel is read out to the first holding unit are performed in parallel, and the second operation and the first operation are performed in parallel between different holding blocks in the plurality of holding blocks.

Abstract: An image sensing apparatus includes a pixel array, a readout unit and an output unit having an output line group, a plurality of difference circuits, a first dummy line and a second dummy line. The output line group is interposed between the first dummy line and the second dummy line. The readout unit includes a plurality of memory circuits, each including a first holding capacitance and a second holding capacitance. A gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line.

Abstract: A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy.

Abstract: An image sensing apparatus comprises a pixel including, a column signal line, a readout circuit, an output line, and an output unit. The readout circuit includes a first accumulation unit, a first opening/closing unit, a second accumulation unit, a transmission unit, and a second opening/closing unit. A capacitance of the first accumulation unit is smaller than a capacitance of the second accumulation unit, and the signal held by the second accumulation unit is read out to the output unit based on the capacitance of the second accumulation unit and the capacitance of the output line.

Abstract: An image sensing device characterized by comprising: a pixel array; a plurality of first holding capacitances; a plurality of second holding capacitances; a first reference power supply pattern; and a second reference power supply pattern, wherein at least part of the first reference power supply pattern is arranged in a first region where reference power supply electrodes of the plurality of first holding capacitances are arrayed, at least part of the second reference power supply pattern is arranged in a second region where reference power supply electrodes of the plurality of second holding capacitances are arrayed, and the first reference power supply pattern and the second reference power supply pattern are isolated in a region including the first region and the second region.

Abstract: A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter.

Abstract: An image sensing device comprises a readout unit, an output amplifier, and a horizontal scanning unit, wherein the horizontal scanning unit scans a plurality of column signal holding circuits in a plurality of holding blocks in the readout unit in a direction along a row, in each holding block, a first operation in which the signal held in a first holding unit is transferred to a second holding unit via a transfer switch is performed, and subsequently, a second operation in which the signal held in the second holding unit is transferred to the output amplifier, and a third operation in which a signal output from a pixel is read out to the first holding unit are performed in parallel, and the second operation and the first operation are performed in parallel between different holding blocks in the plurality of holding blocks.

Abstract: An image sensing apparatus comprises a transfer block including a first transfer unit and a second transfer unit, wherein the first transfer unit includes a first impedance converter which transfers a first signal to the output unit, and the first transfer unit transfers, as a third signal, a difference signal between a first offset of the first impedance converter and a signal obtained by superimposing the first offset on the first signal, the second transfer unit includes a second impedance converter which transfers a second signal to the output unit, and the second transfer unit transfers, as a fourth signal, a difference signal between a second offset of the second impedance converter and a signal obtained by superimposing the second offset on the second signal, and the output unit calculates a difference between the third signal and the fourth signal, generating and outputting an image signal.

Abstract: There is provided a solid-state imaging apparatus which, while shortening the reading time period, can prevent noise from being mixed.

Abstract: An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line.

Abstract: An image sensing apparatus comprises a pixel including, a column signal line, a readout circuit, an output line, and an output unit. The readout circuit includes a first accumulation unit, a first opening/closing unit, a second accumulation unit, a transmission unit, and a second opening/closing unit. A capacitance of the first accumulation unit is smaller than a capacitance of the second accumulation unit, and the signal held by the second accumulation unit is read out to the output unit based on the capacitance of the second accumulation unit and the capacitance of the output line.