Abstract: A headrest stay includes a detachment prevention slot portion formed in a rod-shaped leg portion, the detachment prevention slot portion being recessed toward a center side of the leg portion, the lock portion being configured to enter into the detachment prevention slot portion, and the detachment prevention slot portion including: a first flat face portion that faces a lower side; and a second flat face portion that faces an upper side, the second flat face portion including: an opposing portion that opposes the first flat face portion; and a region that, in a vertical sectional diagram cut along the axial direction of the leg portion, is disposed at an outer peripheral side of the leg portion relative to the first flat face portion.

Abstract: To provide a controller for motor which can reduce a torque ripple up to high frequency, without amplifying unnecessary noise and vibration. A controller for motor estimates an interlinkage flux based on the applied voltage and the detection value of current; estimates an output torque based on the detection value of current and the estimation value of interlinkage flux; extracts a pulsation component from the estimation value of output torque; calculates a voltage command correction value based on the extraction value of pulsation component; calculates a voltage command after superimposing by superimposing the voltage command correction value on the voltage command basic value; and applies voltage to winding based on the voltage command after superimposing.

Abstract: A display device includes a backlight, a display element, a plate for holding at least a portion of an emission surface, from which an image light is emitted, provided on the display element, and a heat dissipation portion that dissipates heat generated from the display element. The display element is connected to the heat dissipation portion via the plate.

Abstract: A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.

Abstract: A semiconductor device includes an interlayer dielectric film, a passivation film, made of an insulating material, formed on the interlayer dielectric film, an uppermost wire, made of a material mainly composed of copper, formed between the surface of the interlayer dielectric film and the passivation film, and a wire covering film, made of a material mainly composed of aluminum, interposed between the passivation film and the surface of the uppermost wire for covering the surface of the uppermost wire.