Abstract: The present invention is a method for producing a fluorinated hydrocarbon represented by a structural formula (3), wherein an ether compound represented by a structural formula (1) and an acid fluoride represented by a structural formula (2) are brought into contact with each other in a hydrocarbon-based solvent, in the presence of a catalyst in which boron trifluoride is supported on a metal oxide: wherein R1 and R2 represent an alkyl group having 1 to 3 carbon atoms, R3 represents a hydrogen atom, a methyl group or an ethyl group, and R4 and R5 represent a methyl group or an ethyl group; and R1 and R2 may be bonded to each other to form a cyclic structure. Through the present invention, a method for industrially advantageously producing 2-fluorobutane is provided.

Abstract: The present invention is a method for producing a fluorinated hydrocarbon represented by a structural formula (3), wherein an ether compound represented by a structural formula (1) and an acid fluoride represented by a structural formula (2) are brought into contact with each other in a hydrocarbon-based solvent, in the presence of a catalyst in which boron trifluoride is supported on a metal oxide: wherein R1 and R2 represent an alkyl group having 1 to 3 carbon atoms, R3 represents a hydrogen atom, a methyl group or an ethyl group, and R4 and R5 represent a methyl group or an ethyl group; and R4 and R2 may be bonded to each other to form a cyclic structure. Through the present invention, a method for industrially advantageously producing 2-fluorobutane is provided.

Abstract: The present invention is a fluorohydrocarbon represented by R—F wherein R represents an isobutyl group or a t-butyl group), the fluorohydrocarbon having a purity of 99.9% by volume or more and a total butenes content of 1,000 ppm by volume or less; a use of the fluorohydrocarbon as a plasma etching gas; and a plasma etching method comprising selectively subjecting an inorganic nitride film stacked on silicon or a silicon oxide film to plasma etching using the fluorohydrocarbon.

Abstract: The present invention provides: a method for producing a fluorinated alkane represented by the formula (2): R2—F, wherein an alcohol having 3 to 5 carbon atoms is fluorinated by a fluorinating agent represented by the formula (1): R1SO2F in the absence of a solvent, and in the presence of a base selected from the group consisting of an amidine base and a phosphazene base; a method for separating and recovering an amidine base from an amidine base-sulfonate complex represented by the following formula (5); and a method for using a recovered amidine base. In the formula, R1 represents a methyl group, an ethyl group or an aromatic group, R2 represents an alkyl group having 3 to 5 carbon atoms, and n is 0 or 2.

Abstract: The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

Abstract: The present invention is a method for producing a fluorohydrocarbon represented by a structural formula (3) comprising bringing a secondary or tertiary ether compound represented by a structural formula (1) into contact with an acid fluoride represented by a structural formula (2) in a hydrocarbon-based solvent in the presence of a boron trifluoride complex. (In structural formulae (1) to (3), each of R1 and R2 represents an alkyl group having 1 to 3 carbon atoms, R3 represents a hydrogen atom, a methyl group, or an ethyl group, and each of R4 and R5 represents a methyl group or an ethyl group, provided that R1 and R2 are optionally bonded to each other to form a ring structure.

Abstract: The present invention is a method for producing a fluorohydrocarbon represented by a structural formula (3) comprising bringing a secondary or tertiary ether compound represented by a structural formula (1) into contact with an acid fluoride represented by a structural formula (2) in a hydrocarbon-based solvent in the presence of a boron trifluoride complex. (In structural formulae (1) to (3), each of R1 and R2 represents an alkyl group having 1 to 3 carbon atoms, R3 represents a hydrogen atom, a methyl group, or an ethyl group, and each of R4 and R5 represents a methyl group or an ethyl group, provided that R1 and R2 are optionally bonded to each other to form a ring structure.

Abstract: The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.

Abstract: A method of manufacturing an optical interferometer includes a first step of forming a first semiconductor portion for a beam splitter and a second semiconductor portion for a movable mirror on a main surface of a support substrate and a first insulating layer formed on the main surface, a second step of disposing a first wall portion between a first side surface of the first semiconductor portion and a second side surface in the second semiconductor portion, and a third step of forming a mirror surface in the second semiconductor portion by forming a first metal film on the second side surface using a shadow mask. In the third step, the first side surface is masked by the mask portion and the first wall portion and the first metal film is formed in a state in which the second side portion is exposed from an opening portion.

Abstract: The present invention provides: 1-fluorobutane having a purity of 99.9% by volume or more and a total butene content of 1,000 ppm by volume or less; use of the 1-fluorobutane as a dry etching gas; and a plasma etching method using the 1-fluorobutane as an etching gas. According to the present invention, high-purity 1-fluorobutane which is suitable as a plasma reaction gas for semiconductors, the use of the high-purity 1-fluorobutane as a dry etching gas, and a plasma etching method using the high-purity 1-fluorobutane as an etching gas are provided.

Abstract: The present invention is a fluorohydrocarbon represented by R—F wherein R represents an isobutyl group or a t-butyl group), the fluorohydrocarbon having a purity of 99.9% by volume or more and a total butenes content of 1,000 ppm by volume or less; a use of the fluorohydrocarbon as a plasma etching gas; and a plasma etching method comprising selectively subjecting an inorganic nitride film stacked on silicon or a silicon oxide film to plasma etching using the fluorohydrocarbon.

Abstract: The present invention is a method for 2-fluorobutane to obtain highly purified 2-fluorobutane through a process comprising a step for: bringing crude 2-fluorobutane that includes 5 to 50 wt % of butene into contact with a brominating agent that can form a bromonium ion in an aprotic polar solvent in the presence of water or an alcohol having up to 4 carbon atoms; converting the butene into compounds having a boiling point higher than that of 2-fluorobutane, then recovering 2-fluorbutane from the reaction solution; and purifying the recovered 2-fluorabutane by distillation.

Abstract: A method of manufacturing an optical interferometer includes a first step of forming a first semiconductor portion for a beam splitter and a second semiconductor portion for a movable mirror on a main surface of a support substrate and a first insulating layer formed on the main surface, a second step of disposing a first wall portion between a first side surface of the first semiconductor portion and a second side surface in the second semiconductor portion, and a third step of forming a mirror surface in the second semiconductor portion by forming a first metal film on the second side surface using a shadow mask. In the third step, the first side surface is masked by the mask portion and the first wall portion and the first metal film is formed in a state in which the second side portion is exposed from an opening portion.

Abstract: The present invention is a method for 2-fluorobutane to obtain highly purified 2-fluorobutane through a process comprising a step for: bringing crude 2-fluorobutane that includes 5 to 50 wt % of butene into contact with a brominating agent that can form a bromonium ion in an aprotic polar solvent in the presence of water or an alcohol having up to 4 carbon atoms; converting the butene into compounds having a boiling point higher than that of 2-fluorobutane, then recovering 2-fluorbutane from the reaction solution; and purifying the recovered 2-fluorabutane by distillation.

Abstract: The present invention is a high-purity 2-fluorobutane having a purity of 99.9 vol % or more and a butene content of 1,000 ppm by volume or less, and a method for using the high-purity 2-fluorobutane as a dry etching gas. According to the present invention, a high-purity 2-fluorobutane that is suitable as a plasma reaction gas for semiconductors is provided.

Abstract: The present invention is a 1H-Heptafluorocyclopentene having a purity of 999 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

Abstract: A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.

Abstract: An unsaturated hydrogen-containing fluoroolefin compound is obtained by bringing an unsaturated fluorine-containing halogen compound into contact with 0.1 to 3 molar equivalents of hydrogen relative to the unsaturated fluorine-containing halogen compound in a vapor phase in the presence of a supported palladium catalyst in which an amount of supported palladium is 0.1% by weight to 2.5% by weight.

Abstract: A process for producing a perfluoroalkyne compound includes an addition reaction step of adding Cl2, Br2, or I2 to a compound shown by the formula (1) CH3C?CR1 to obtain a compound shown by the formula (2) CH3CX2CX2R1, a fluorination reaction step of reacting the compound shown by the formula (2) with fluorine gas to obtain a compound shown by the formula (3) CF3CX2CX2R2, and a dehalogenation reaction step of contacting the compound shown by the formula (3) with a metal or an organometallic compound to obtain a perfluoroalkyne compound shown by the formula (4) CF3C?CR2. According to the present invention, a perfluoroalkyne compound can be produced at high productivity and high yield using starting raw materials which are environmentally friendly and industrially available. In the above formulas, R1 represents a methyl group or an ethyl group, X represents Cl, Br, or I, and R2 represents a trifluoromethyl group or a pentafluoroethyl group.

Abstract: An unsaturated hydrogen-containing fluoroolefin compound is obtained by bringing an unsaturated fluorine-containing halogen compound into contact with 0.1 to 3 molar equivalents of hydrogen relative to the unsaturated fluorine-containing halogen compound in a vapor phase in the presence of a supported palladium catalyst in which an amount of supported palladium is 0.1% by weight to 2.5% by weight.