Abstract: A semiconductor device includes: a first electrode; a semiconductor part located on the first electrode; a second electrode located in a first region on the semiconductor part; a third electrode located in a second region on the semiconductor part; an insulating member located in the semiconductor part in the first and second regions; a fourth electrode located in the insulating member in the first and second regions; a fifth electrode located in the insulating member between the first electrode and the fourth electrode in the first and second regions; and a conductive member located at least in the second region. The conductive member is connected to the third, fourth, and fifth electrodes.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor chip having a first electrode on a first surface, a metal plate, and a first conductive bonding sheet that is disposed between the first surface of the semiconductor chip and the metal plate and bonds the first electrode to the metal plate.

Abstract: A resonator structure includes an intake duct and a resonator that is accommodated in the intake duct. The resonator extends upward. The resonator includes a collar that protrudes toward an inner surface of the intake duct. One or both of the inner surface and the collar include a surface texture for gathering oil into a gap between the inner surface and the collar.

Abstract: An alloy particle contains: total content of Fe and Co: from 82.2 to 96.5 parts by mass; Co: 0 to 30.0 parts by mass; P: 0 to 4.5 parts by mass; B: more than 0 to 5.0 parts by mass; C: 0 to 3.0 parts by mass; Si: 0 to 6.7 parts by mass; Ni: more than 0 to 12.0 parts by mass; Cr: more than 0 to 4.2 parts by mass; total content of Mo, W, Zr, and Nb: 0 to 4.2 parts by mass; total content of P and Cr: 7.4 parts by mass or less; multiplication product of the parts by mass of Ni and Cr: 0.5 or more; and total content of Fe, Co, and Ni: 97.0 parts by mass or less. The alloy particle contains an amorphous phase, and a volume percentage of the amorphous phase is 70% or higher.

Abstract: An alloy includes: an average Ni concentration of 1.5 at.% or more and 15.5 at.% or less; an average Co concentration of 0 at.% or more and 10.0 at.% or less; an average B concentration of 3.0 at.% or more and 16.0 at.% or less; an average P concentration of 0.5 at.% or more and 10.0 at.% or less; an average Cu concentration of 0 at.% or more and 2.0 at.% or less; an average Si concentration of 0 at.% or more and 6.0 at.% or less; an average C concentration of 0 at.% or more and 6.0 at.% or less; a total of average concentrations of Nb, Mo, Zr, W, V, Hf, Ta, Al, Ti, and Cr of 0 at.% or more and 6.0 at.% or less; and a total of an average Fe concentration, the average Ni concentration, and the average Co concentration of 78.0 at.% or more and 88.0 at.% or less.

Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.

Abstract: An alloy including an amorphous phase, and the alloy includes: an average Fe concentration in an entire alloy of 82.0 at. % or more and 88.0 at. % or less; an average Cu concentration in the entire alloy of 0.4 at. % or more and 1.0 at. % or less; an average P concentration in the entire alloy of 5.0 at. % or more and 9.0 at. % or less; an average B concentration in the entire alloy of 6.0 at. % or more and 10.0 at. % or less; an average Si concentration in the entire alloy of 0.4 at. % or more and 1.9 at. % or less; an average C concentration in the entire alloy of 0 at. % or more and 2.0 at. % or less; an average impurity concentration of an impurity other than Fe, Cu, P, B, Si, and C in the entire alloy of 0 at. % or more and 0.3 at. % or less; and a total of the average Fe concentration, the average Cu concentration, the average P concentration, the average B concentration, the average Si concentration, the average C concentration, and the average impurity concentration of 100.0 at. %.

Abstract: A photomask with a dummy pattern is inspected in a predetermined detection sensitivity by using photomask pattern data designating a photomask with a dummy pattern to detect defects in the photomask. Coordinates indicating the positions of the defects are also determined. The defects in a design pattern area and those in a dummy pattern area are discriminated by using defect-discriminating data. The defects in the design pattern area and those in the dummy pattern area are examined on the basis of respective inspection specifications.

Abstract: A photomask with a dummy pattern is inspected in a predetermined detection sensitivity by using photomask pattern data designating a photomask with a dummy pattern to detect defects in the photomask. Coordinates indicating the positions of the defects are also determined. The defects in a design pattern area and those in a dummy pattern area are discriminated by using defect-discriminating data. The defects in the design pattern area and those in the dummy pattern area are examined on the basis of respective inspection specifications.