Abstract: Provided is a magnetic base body having excellent insulating properties and magnetic properties. A magnetic base body according to one embodiment includes: a plurality of soft magnetic metal particles; and a plurality of insulating films each covering a surface of corresponding one of the plurality of soft magnetic metal particles. In the magnetic base body, the plurality of soft magnetic metal particles are filled at a filling factor of 85% or higher. The KAM value of the soft magnetic metal particles is 0.6 or less. The soft magnetic metal particles contain 95 wt % or more Fe, Si, and Al. The insulating films contain an oxide of Si and an oxide of Al.

Abstract: A semiconductor device according to one embodiment includes: a first electrode; a first semiconductor region of a first conductivity type disposed above the first electrode; an insulating film disposed in the first semiconductor region; a second electrode disposed in the insulating film; a second semiconductor region of a second conductivity type adjacent to the second electrode via the insulating film; a third semiconductor region of the first conductivity type disposed on the second semiconductor region; and a third electrode that is in contact with the first semiconductor region to form a Schottky junction on a first side surface, is in contact with the second semiconductor region and the third semiconductor region on a second side surface opposite to the first side surface, includes a contact portion having a bottom surface located above a bottom surface of the second semiconductor region, and is electrically coupled to the contact portion.

Abstract: Disclosed herein is a magnetic base body including a plurality of soft magnetic metal particles each containing Fe, and a plurality of insulation films that cover respective surfaces of the soft magnetic metal particles. The plurality of soft magnetic metal particles include a first soft magnetic metal particle, the plurality of insulation films include a first insulation film that covers a surface of the first soft magnetic metal particle, and the first insulation film is disposed between the first soft magnetic metal particle and a soft second magnetic metal particle that is adjacent to the first soft magnetic metal particle, and the first insulation film includes a first oxide region that is composed of mainly an amorphous Al oxide and a second oxide region that covers a portion of the surface of the first soft magnetic metal particle and that is composed of mainly an oxide of an element A.

Abstract: A magnetic base body according to one embodiment includes: a plurality of soft magnetic metal particles; and a plurality of insulating films covering surfaces of the plurality of soft magnetic metal particles. The plurality of soft magnetic metal particles include a first soft magnetic metal particle, and the plurality of insulating films include a first insulating film covering a surface of the first soft magnetic metal particle. The first insulating film includes one or more first oxide regions, the one or more first oxide regions containing Fe and Cr and having a peak intensity at 730 cm?1 in a Raman spectrum obtained by Raman spectrometry.

Abstract: One object is to manufacture a magnetic base body containing soft magnetic metal particles with a high content percentage of Fe. A manufacturing method of a magnetic base body according to one embodiment includes: producing a molded body containing a plurality of soft magnetic metal particles at a filling factor of 85% or higher, each of the plurality of soft magnetic metal particles containing Fe and an element A more apt to oxidation than Fe; and heating the molded body to form an insulating film on a surface of each of the plurality of soft magnetic metal particles, the insulating film containing an oxide of Fe and an oxide of the element A. A content percentage of Fe in the plurality of soft magnetic metal particles after the heating is higher than a content percentage of Fe in the plurality of soft magnetic metal particles before the heating.

Abstract: An alloy particle contains: total content of Fe and Co: from 82.2 to 96.5 parts by mass; Co: 0 to 30.0 parts by mass; P: 0 to 4.5 parts by mass; B: more than 0 to 5.0 parts by mass; C: 0 to 3.0 parts by mass; Si: 0 to 6.7 parts by mass; Ni: more than 0 to 12.0 parts by mass; Cr: more than 0 to 4.2 parts by mass; total content of Mo, W, Zr, and Nb: 0 to 4.2 parts by mass; total content of P and Cr: 7.4 parts by mass or less; multiplication product of the parts by mass of Ni and Cr: 0.5 or more; and total content of Fe, Co, and Ni: 97.0 parts by mass or less. The alloy particle contains an amorphous phase, and a volume percentage of the amorphous phase is 70% or higher.

Abstract: An alloy includes: an average Ni concentration of 1.5 at.% or more and 15.5 at.% or less; an average Co concentration of 0 at.% or more and 10.0 at.% or less; an average B concentration of 3.0 at.% or more and 16.0 at.% or less; an average P concentration of 0.5 at.% or more and 10.0 at.% or less; an average Cu concentration of 0 at.% or more and 2.0 at.% or less; an average Si concentration of 0 at.% or more and 6.0 at.% or less; an average C concentration of 0 at.% or more and 6.0 at.% or less; a total of average concentrations of Nb, Mo, Zr, W, V, Hf, Ta, Al, Ti, and Cr of 0 at.% or more and 6.0 at.% or less; and a total of an average Fe concentration, the average Ni concentration, and the average Co concentration of 78.0 at.% or more and 88.0 at.% or less.

Abstract: The present invention is an alloy that contains Fe, B, P, and Cu, and includes a non-crystalline phase and a plurality of crystalline phases formed in the non-crystalline, wherein an average Fe concentration in a whole alloy is 79 atomic % or greater, and wherein a density of Cu clusters when a region with a Cu concentration of 6.0 atomic % or greater among regions with 1.0 nm on a side in atom probe tomography is determined to be a Cu cluster is 0.20×1024/m3.

Abstract: An alloy including an amorphous phase, and the alloy includes: an average Fe concentration in an entire alloy of 82.0 at. % or more and 88.0 at. % or less; an average Cu concentration in the entire alloy of 0.4 at. % or more and 1.0 at. % or less; an average P concentration in the entire alloy of 5.0 at. % or more and 9.0 at. % or less; an average B concentration in the entire alloy of 6.0 at. % or more and 10.0 at. % or less; an average Si concentration in the entire alloy of 0.4 at. % or more and 1.9 at. % or less; an average C concentration in the entire alloy of 0 at. % or more and 2.0 at. % or less; an average impurity concentration of an impurity other than Fe, Cu, P, B, Si, and C in the entire alloy of 0 at. % or more and 0.3 at. % or less; and a total of the average Fe concentration, the average Cu concentration, the average P concentration, the average B concentration, the average Si concentration, the average C concentration, and the average impurity concentration of 100.0 at. %.

Abstract: A photomask with a dummy pattern is inspected in a predetermined detection sensitivity by using photomask pattern data designating a photomask with a dummy pattern to detect defects in the photomask. Coordinates indicating the positions of the defects are also determined. The defects in a design pattern area and those in a dummy pattern area are discriminated by using defect-discriminating data. The defects in the design pattern area and those in the dummy pattern area are examined on the basis of respective inspection specifications.

Abstract: A photomask with a dummy pattern is inspected in a predetermined detection sensitivity by using photomask pattern data designating a photomask with a dummy pattern to detect defects in the photomask. Coordinates indicating the positions of the defects are also determined. The defects in a design pattern area and those in a dummy pattern area are discriminated by using defect-discriminating data. The defects in the design pattern area and those in the dummy pattern area are examined on the basis of respective inspection specifications.