Abstract: There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Abstract: There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Abstract: A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.

Abstract: There is provided a silicon device structure, comprising: a P-doped n+ type amorphous silicon film formed on a silicon semiconductor, and a wiring formed on the P doped n+ type amorphous silicon film, wherein the wiring is formed of a silicon oxide film which is formed on a surface of the P doped n+ type amorphous silicon film and is also formed of a copper alloy film, and the copper alloy film is a film obtained by forming a copper alloy containing Mn of 1 atom % or more and 5 atom % or less and P of 0.05 atom % or more and 1.0 atom % or less by sputtering.

Abstract: According to one embodiment of the invention, a Cu—Ga alloy material has an average composition consisting of not less than 32% and not more than 53% by mass of gallium (Ga) as well as the balance consisting of copper (Cu) and an inevitable impurity. In the Cu—Ga alloy material, a region containing less than 47% by mass of copper accounts for 2% or less by volume of the whole Cu—Ga alloy material.

Abstract: A sputtering target material includes a copper alloy made of an oxygen free copper with a purity of 99.99% or more doped with Ag of 200 to 2000 ppm. The sputtering target material is formed by casting and rolling. An average grain size of crystal is 30 to 100 ?m. A ratio (220)/(111) which is a ratio of an orientation ratio of (220) plane to an orientation ratio of (111) plane calculated based on a peak intensity measurement of an X-ray diffraction at a sputtering surface is 6 or less and a standard deviation indicating a dispersion in the ratio (220)/(111) is 10 or less.

Abstract: A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer.

Abstract: A Cu—Ga alloy includes a plurality of phases, and not less than 40 wt % and not more than 60 wt % of gallium (Ga) and a balance consisting of copper and an inevitable impurity. The plurality of phases include a segregation phase including not less than 80 wt % of gallium (Ga), and a rate of a volume of the segregation phase to a total volume of the Cu—Ga alloy is not more than 1%. The plurality of phases include particles including not less than 40 wt % and not more than 60 wt % of gallium (Ga), the particles include a diameter of not less than 0.1 ?m and not more than 30 ?m, and a rate of a volume of the particles to the total volume of the Cu—Ga alloy is not less than 90%.

Abstract: A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer.

Abstract: A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer.

Abstract: A copper sputtering target material includes a sputter surface formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of accelerated specified inert gas ions, the one crystal orientation plane emits sputter particles with energy greater than energy of sputter particles sputtered out of the other crystal orientation planes. The occupying proportion of the one crystal orientation plane to the sum of the one crystal orientation plane and the other crystal orientation planes is not less than 15%.

Abstract: A corrosive resistant metal material covered with a conductive substance suitable for use in a component material requiring conductivity and corrosion resistance like electrical conductive material, electrical contact, electromagnetic wave shield, electrochemical electrode or antistatic material, specifically for component material requiring conductivity in sever condition of corrosive environment is provided. A corrosive resistant metal material covered with a conductive substance is formed by cladding a corrosive resistant metal selected from the group consisting of titanium, zirconium, tantalum, niobium and alloy thereof on a conductive metal selected from the group consisting of iron, aluminum, copper, titanium, magnesium, zirconium, tantalum, niobium, tungsten, nickel, chrome and alloy thereof, and covering a conductive surface finishing layer over surface of a corrosive resistant metal layer with a mixture of conductive substance and resinous binder.

Abstract: The surface of highly conductive iron, copper, aluminum, magnesium, or alloy thereof is covered with highly corrosion-resistant titanium or titanium alloy through plastic working by rolling or extrusion to form a cladding material. At least one surface of the cladding material is covered with a carbon material to form a separator for a solid polymer electrolyte fuel cell. By virtue of the above constitution, the separator for a solid polymer electrolyte fuel cell has good workability and, at the same time, can surely maintain or improve electrical conductivity and corrosion resistance.

Abstract: A fuel cell bipolarplate has: a bipolarplate substrate that is of only a corrosion-resisting metallic material or a composite composed of a corrosion-resisting metallic material to define the surface layer of the composite and the other metallic material to define the inner layer of the composite; and a conductive contact layer that is formed on the bipolarplate substrate, the conductive contact layer being of noble metal and having a thickness of 0.0005 &mgr;m or greater and less than 0.01 &mgr;m.

Abstract: A corrosive resistant metal material covered with a conductive substance suitable for use in a component material requiring conductivity and corrosion resistance like electrical conductive material, electrical contact, electromagnetic wave shield, electrochemical electrode or antistatic material, specifically for component material requiring conductivity in sever condition of corrosive environment is provided. A corrosive resistant metal material covered with a conductive substance is formed by cladding a corrosive resistant metal selected from the group consisting of titanium, zirconium, tantalum, niobium and alloy thereof on a conductive metal selected from the group consisting of iron, aluminum, copper, titanium, magnesium, zirconium, tantalum, niobium, tungsten, nickel, chrome and alloy thereof, and covering a conductive surface finishing layer over surface of a corrosive resistant metal layer with a mixture of conductive substance and resinous binder.

Abstract: The surface of highly conductive iron, copper, aluminum, magnesium, or alloy thereof is covered with highly corrosion-resistant titanium or titanium alloy through plastic working by rolling or extrusion to form a cladding material. At least one surface of the cladding material is covered with a carbon material to form a separator for a solid polymer electrolyte fuel cell. By virtue of the above constitution, the separator for a solid polymer electrolyte fuel cell has good workability and, at the same time, can surely maintain or improve electrical conductivity and corrosion resistance.