Abstract: Provided are a composition for chemical mechanical polishing and a method for chemical mechanical polishing, whereby a tungsten film as a wiring material can be polished at high speed, and the occurrence of surface defects in a polished surface can be reduced. A composition for chemical mechanical polishing pertaining contains (A) alumina particles, at least a portion of the surface of which is coated with a coating film of silica alumina, and (B) a liquid medium.

Abstract: Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material. The composition for chemical mechanical polishing contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium. (1): —SO3?M+ (In the formula, M+ represents a monovalent cation.

Abstract: A fixing device includes an endless fixing belt, a heater, a pad, a stay and a pressing roller. The endless fixing belt rotates as a sheet is conveyed. The heater heats the fixing belt in a width direction. The pad comes into contact with an inner surface of the fixing belt in the width direction. The stay supports the pad inside the fixing belt. The pressing roller presses the fixing belt against the pad. The pad is made of metal.

Abstract: An air-conditioning apparatus includes a refrigerant circuit in which a compressor, a heat-source-side heat exchanger, a heat-source-side expansion device, and a circuit-circuit heat exchanger are connected via a refrigerant pipe and refrigerant circulates, and a heat medium circuit in which a pump, the circuit-circuit heat exchanger, a load-side expansion device, and a load-side heat exchanger are connected via a heat medium pipe and a heat medium circulates. The air-conditioning apparatus includes a radiator that is connected to the heat medium pipe and a control unit that is attached to the radiator. The circuit-circuit heat exchanger exchanges heat between the refrigerant circulating in the refrigerant circuit and the heat medium circulating in the heat medium circuit. The control unit is cooled via the radiator by the heat medium flowing in the heat medium pipe.

Abstract: A semiconductor processing composition that can reduce an etching rate of cobalt and minimize corrosion of a cobalt site due to a surface treatment when used for a treatment such as semiconductor cleaning and chemical mechanical polishing. A semiconductor processing composition according to one aspect of the disclosure is a semiconductor processing composition which includes glutamic acid, and at least one selected from the group consisting of histidine, cysteine and glycine, and used for processing an exposed cobalt surface. A semiconductor processing composition according to one aspect of the disclosure is a semiconductor processing composition which includes a compound having a structure in which glutamic acid, and at least one selected from the group consisting of histidine, cysteine and glycine are peptide-bonded and is used for processing an exposed cobalt surface.

Abstract: An air-conditioning apparatus includes a refrigerant circuit in which a compressor, a heat-source-side heat exchanger, a heat-source-side expansion device, and a circuit-circuit heat exchanger are connected via a refrigerant pipe and refrigerant circulates, and a heat medium circuit in which a pump, the circuit-circuit heat exchanger, a load-side expansion device, and a load-side heat exchanger are connected via a heat medium pipe and a heat medium circulates. The air-conditioning apparatus includes a radiator that is connected to the heat medium pipe and a control unit that is attached to the radiator. The circuit-circuit heat exchanger exchanges heat between the refrigerant circulating in the refrigerant circuit and the heat medium circulating in the heat medium circuit. The control unit is cooled via the radiator by the heat medium flowing in the heat medium pipe.

Abstract: A fixing device includes a fixing member, a separating claw, and a moving mechanism. The fixing member heats a toner image on a recording medium while rotating around an axis. The separating claw separates the recording medium from a surface of the fixing member. The moving mechanism reciprocates the separating claw in an axial direction and temporarily stops the separating claw at both ends of a moving range of the separating claw.

Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Abstract: A fixing device includes a fixing member, a separating claw, and a moving mechanism. The fixing member heats a toner image on a recording medium while rotating around an axis. The separating claw separates the recording medium from a surface of the fixing member. The moving mechanism reciprocates the separating claw in an axial direction and temporarily stops the separating claw at both ends of a moving range of the separating claw.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of organic acids and salts thereof; (B) a phosphorus-containing compound; and (C) abrasive grains each having an absolute value of a zeta potential in the composition of 5 mV or more, wherein, when a content of the component (A) in the composition is represented by MA mass % and a content of the component (B) therein is represented by MB mass %, a ratio MA/MB of the content of the component (A) to the content of the component (B) ranges from 1 to 10, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of carboxyl group-containing organic acids and salts thereof; (B) a basic compound having a first acid dissociation constant (pKa) of 9 or more; and (C) abrasive grains, wherein the component (A) has a complex stability constant with copper of 5 or less, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.

Abstract: A fixing device includes a fixing member, a pressuring member and a temperature sensing part. The fixing member heated by a heat source contacts with a recording medium to heat a toner image on the recording medium. The pressuring member pressures the recording medium to the fixing member. The temperature sensing part in non-contact with the fixing member includes an infrared sensing element sensing infrared rays from the fixing member and a condensing member condensing the infrared rays to the infrared sensing element. Detection temperature of the fixing member is calculated with a sensing value by the infrared sensing element. The detection temperature or control temperature of the heat source is corrected with temperature deference between the infrared sensing element and the condensing member. Heating of the fixing member is controlled with the corrected detection temperature and the control temperature or the detection temperature and the corrected control temperature.

Abstract: A fixing device includes a fixing member, a pressuring member and a temperature sensing part. The fixing member heated by a heat source contacts with a recording medium to heat a toner image on the recording medium. The pressuring member pressures the recording medium to the fixing member. The temperature sensing part in non-contact with the fixing member includes an infrared sensing element sensing infrared rays from the fixing member and a condensing member condensing the infrared rays to the infrared sensing element. Detection temperature of the fixing member is calculated with a sensing value by the infrared sensing element. The detection temperature or control temperature of the heat source is corrected with temperature deference between the infrared sensing element and the condensing member. Heating of the fixing member is controlled with the corrected detection temperature and the control temperature or the detection temperature and the corrected control temperature.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.

Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Abstract: A cleaning composition includes (A) at least one compound selected from the group consisting of a fatty acid that includes a hydrocarbon group having 8 to 20 carbon atoms, a phosphonic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, a sulfuric acid ester that includes a hydrocarbon group having 3 to 20 carbon atoms, an alkenylsuccinic acid that includes a hydrocarbon group having 3 to 20 carbon atoms, and salts thereof, (B) an organic acid, (C) a water-soluble amine, (D) a water-soluble polymer, and an aqueous medium, the cleaning composition having a pH of 9 or more.

Abstract: The fixing device includes a charge elimination member, a retaining member, a contact sheet metal, and a first contact member. The charge elimination member performs charge elimination from a recording medium by making contact with the recording medium that has passed through a fixing-and-nipping part. The retaining member has the charge elimination member fixed thereto. The contact sheet metal is held at a specified potential. The first contact member electrically connects the charge elimination member and the contact sheet metal to each other. The retaining member has a hollow cylindrical-shaped positioning boss, and the fixing housing has an insertion hole into which the positioning boss is to be inserted. The first contact member is placed inside the positioning boss and has one end protruded from the positioning boss. The contact sheet metal is placed so as to face the positioning boss.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.

Abstract: Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is located on a substrate; epitaxially growing a germanium material within the at least one opening of the dielectric layer, the germanium material extending above a topmost surface of the dielectric layer; and planarizing the germanium material using at least one slurry composition to form coplanar surfaces of the germanium material and the dielectric layer, where a slurry composition of at least one slurry composition polishes the germanium material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator, and an oxidizer, the at least one pH modulator including an acidic pH modulator, and lacking a basic pH modulator.