Abstract: A medical manipulator system includes a medical manipulator comprising a bending portion, an actuator configured to bend the bending portion, a controller comprising an interface configured to which a bending manipulation for bending the bending portion is input, and configured to detect a movement amount of the interface, and a processor configured to control the actuator. The processor calculates displacement of a bending amount of the bending portion for a reference bending amount and causes the actuator to be driven on the basis of a ratio of a second bending amount to the movement amount of the interface calculated so that a difference between a first bending amount calculated on the basis of a driving amount of the actuator and the second bending amount calculated on the basis of the movement amount of the interface is eliminated.

Abstract: The present invention provides a method for producing a composition for culturing animal cells, wherein the method includes: (1) a step in which an algae is mixed with a solid acid catalyst and an algae extract is obtained by heating; and (2) a step in which the algae extract is added to a medium for culturing animal cells and the concentration of the algae extract is adjusted.

Abstract: A thermal treatment apparatus includes: a hot plate on which a substrate is mounted and which is configured to heat the substrate; an upper cover configured to cover a treatment space above the hot plate and form an opening being a carry-in/out port for the substrate to/from the treatment space; an exhauster provided at a position opposite to the opening across the hot plate in plan view and configured to exhaust gas from the treatment space; a shutter configured to cover a lower portion of the opening; and a gas flow guide provided at a position spaced apart from the shutter, wherein the gas flow guide divides gas flowing into the treatment space due to the exhaust of gas by the exhauster from an upper portion of the opening whose lower portion is covered with the shutter, into an upper side and a lower side.

Abstract: A noise propagating to outside of a power conversion device is reduced. A power conversion device includes at least one external electrode, a switching element, a noise filter connected between at least one external electrode and switching element, at least one first wire to connect at least one external electrode and noise filter, a second wire to connect noise filter and switching element, and a magnetic filter attached to second wire. An attenuation characteristic A [dB] and an attenuation characteristic B [dB] satisfy a relationship of B<A, where A is an attenuation characteristic of noise filter, and B is an attenuation characteristic due to spatial coupling between at least one first wire and second wire that is located between switching element and magnetic filter.

Abstract: A noise propagating to outside of a power conversion device is reduced. A power conversion device includes at least one external electrode, a switching element, a noise filter connected between at least one external electrode and switching element, at least one first wire to connect at least one external electrode and noise filter, a second wire to connect noise filter and switching element, and a magnetic filter attached to second wire. An attenuation characteristic A [dB] and an attenuation characteristic B [dB] satisfy a relationship of B<A, where A is an attenuation characteristic of noise filter, and B is an attenuation characteristic due to spatial coupling between at least one first wire and second wire that is located between switching element and magnetic filter.

Abstract: Provided are a composition for chemical mechanical polishing and a method for chemical mechanical polishing, whereby a tungsten film as a wiring material can be polished at high speed, and the occurrence of surface defects in a polished surface can be reduced. A composition for chemical mechanical polishing pertaining contains (A) alumina particles, at least a portion of the surface of which is coated with a coating film of silica alumina, and (B) a liquid medium.

Abstract: Provided are a composition for chemical mechanical polishing and a chemical mechanical polishing method, which enable reduction in occurrence of surface defects in a polished surface and which enable high speed polishing of a tungsten film which is a wiring material. The composition for chemical mechanical polishing contains: (A) particles containing alumina and having a functional group represented by general formula (1); and (B) a liquid medium. (1): —SO3?M+ (In the formula, M+ represents a monovalent cation.

Abstract: A fixing device includes an endless fixing belt, a heater, a pad, a stay and a pressing roller. The endless fixing belt rotates as a sheet is conveyed. The heater heats the fixing belt in a width direction. The pad comes into contact with an inner surface of the fixing belt in the width direction. The stay supports the pad inside the fixing belt. The pressing roller presses the fixing belt against the pad. The pad is made of metal.

Abstract: An air-conditioning apparatus includes a refrigerant circuit in which a compressor, a heat-source-side heat exchanger, a heat-source-side expansion device, and a circuit-circuit heat exchanger are connected via a refrigerant pipe and refrigerant circulates, and a heat medium circuit in which a pump, the circuit-circuit heat exchanger, a load-side expansion device, and a load-side heat exchanger are connected via a heat medium pipe and a heat medium circulates. The air-conditioning apparatus includes a radiator that is connected to the heat medium pipe and a control unit that is attached to the radiator. The circuit-circuit heat exchanger exchanges heat between the refrigerant circulating in the refrigerant circuit and the heat medium circulating in the heat medium circuit. The control unit is cooled via the radiator by the heat medium flowing in the heat medium pipe.

Abstract: A semiconductor processing composition that can reduce an etching rate of cobalt and minimize corrosion of a cobalt site due to a surface treatment when used for a treatment such as semiconductor cleaning and chemical mechanical polishing. A semiconductor processing composition according to one aspect of the disclosure is a semiconductor processing composition which includes glutamic acid, and at least one selected from the group consisting of histidine, cysteine and glycine, and used for processing an exposed cobalt surface. A semiconductor processing composition according to one aspect of the disclosure is a semiconductor processing composition which includes a compound having a structure in which glutamic acid, and at least one selected from the group consisting of histidine, cysteine and glycine are peptide-bonded and is used for processing an exposed cobalt surface.

Abstract: An air-conditioning apparatus includes a refrigerant circuit in which a compressor, a heat-source-side heat exchanger, a heat-source-side expansion device, and a circuit-circuit heat exchanger are connected via a refrigerant pipe and refrigerant circulates, and a heat medium circuit in which a pump, the circuit-circuit heat exchanger, a load-side expansion device, and a load-side heat exchanger are connected via a heat medium pipe and a heat medium circulates. The air-conditioning apparatus includes a radiator that is connected to the heat medium pipe and a control unit that is attached to the radiator. The circuit-circuit heat exchanger exchanges heat between the refrigerant circulating in the refrigerant circuit and the heat medium circulating in the heat medium circuit. The control unit is cooled via the radiator by the heat medium flowing in the heat medium pipe.

Abstract: A fixing device includes a fixing member, a separating claw, and a moving mechanism. The fixing member heats a toner image on a recording medium while rotating around an axis. The separating claw separates the recording medium from a surface of the fixing member. The moving mechanism reciprocates the separating claw in an axial direction and temporarily stops the separating claw at both ends of a moving range of the separating claw.

Abstract: Provided is a treatment composition for chemical mechanical polishing, for treating an object to be treated including a wiring layer containing a metal, the treatment composition for chemical mechanical polishing containing: (A) a nitrogen-containing compound; (B) at least one kind of compound selected from the group consisting of a surfactant and polyacrylic acid; and (D) a pH adjusting agent, in which in terms of electrode charge transfer resistance value obtained by AC impedance measurement using the metal for an electrode, a sum of electrode charge transfer resistance values RA+RB in aqueous solutions each containing the component (A) or (B) and the component (D), and an electrode charge transfer resistance value RC in an aqueous solution containing the components (A), (B), and (D) have a relationship of RC/(RA+RB)>1.

Abstract: A fixing device includes a fixing member, a separating claw, and a moving mechanism. The fixing member heats a toner image on a recording medium while rotating around an axis. The separating claw separates the recording medium from a surface of the fixing member. The moving mechanism reciprocates the separating claw in an axial direction and temporarily stops the separating claw at both ends of a moving range of the separating claw.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of organic acids and salts thereof; (B) a phosphorus-containing compound; and (C) abrasive grains each having an absolute value of a zeta potential in the composition of 5 mV or more, wherein, when a content of the component (A) in the composition is represented by MA mass % and a content of the component (B) therein is represented by MB mass %, a ratio MA/MB of the content of the component (A) to the content of the component (B) ranges from 1 to 10, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: Provided is a chemical mechanical polishing composition to be used for forming a circuit board including a resin substrate on which a wiring layer containing copper or a copper alloy is provided, the chemical mechanical polishing composition including: (A) at least one selected from a group consisting of carboxyl group-containing organic acids and salts thereof; (B) a basic compound having a first acid dissociation constant (pKa) of 9 or more; and (C) abrasive grains, wherein the component (A) has a complex stability constant with copper of 5 or less, and wherein the chemical mechanical polishing composition has a pH value of from 1 to 3.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.

Abstract: A fixing device includes a fixing member, a pressuring member and a temperature sensing part. The fixing member heated by a heat source contacts with a recording medium to heat a toner image on the recording medium. The pressuring member pressures the recording medium to the fixing member. The temperature sensing part in non-contact with the fixing member includes an infrared sensing element sensing infrared rays from the fixing member and a condensing member condensing the infrared rays to the infrared sensing element. Detection temperature of the fixing member is calculated with a sensing value by the infrared sensing element. The detection temperature or control temperature of the heat source is corrected with temperature deference between the infrared sensing element and the condensing member. Heating of the fixing member is controlled with the corrected detection temperature and the control temperature or the detection temperature and the corrected control temperature.

Abstract: A fixing device includes a fixing member, a pressuring member and a temperature sensing part. The fixing member heated by a heat source contacts with a recording medium to heat a toner image on the recording medium. The pressuring member pressures the recording medium to the fixing member. The temperature sensing part in non-contact with the fixing member includes an infrared sensing element sensing infrared rays from the fixing member and a condensing member condensing the infrared rays to the infrared sensing element. Detection temperature of the fixing member is calculated with a sensing value by the infrared sensing element. The detection temperature or control temperature of the heat source is corrected with temperature deference between the infrared sensing element and the condensing member. Heating of the fixing member is controlled with the corrected detection temperature and the control temperature or the detection temperature and the corrected control temperature.

Abstract: A chemical mechanical planarization for indium phosphide material is provided in which at least one opening is formed within a dielectric layer located on a substrate. An indium phosphide material is epitaxially grown within the at least one opening of the dielectric layer which extends above a topmost surface of the dielectric layer. The indium phosphide material is planarized using at least one slurry composition to form coplanar surfaces of the indium phosphide material and the dielectric layer, where a slurry composition of the at least one slurry composition polishes the indium phosphide material selective to the topmost surface of the dielectric layer, and includes an abrasive, at least one pH modulator and an oxidizer, the at least one pH modulator including an acidic pH modulator, but lacks a basic pH modulator, and where the oxidizer suppresses generation of phosphine gas.