Patents by Inventor Tatsuyuki Shinagawa

Tatsuyuki Shinagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6636543
    Abstract: A semiconductor device including a substrate, a mesa post overlying the substrate and having a substantially cylindrical shape, a resin member surrounding the mesa post and a stress moderating member received in the mesa post for moderating stress between the mesa post and the resin member. The stress applied to the mesa post is reduced because the entire volume of the resin member is divided by the stress moderating member and each of the divided resin members reduces the stress.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: October 21, 2003
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Norihiro Iwai, Tatsuyuki Shinagawa, Noriyuki Yokouchi
  • Publication number: 20030048824
    Abstract: A vertical cavity surface emitting semiconductor laser (VCSEL) device has p-type and n-type DBRs sandwiching therebetween a resonant cavity including an active layer. Each the DBRs has a plurality of layer pairs each including a Alx1Ga1-x1As high-reflectivity layer and an Alx2Ga1-x2As low-reflectivity layer and an Alx3Ga1-x3As slope content layer interposed between each of the high-reflectivity layers and adjacent low-reflectivity layer. The slope content layers in the vicinity of the active layer has an Al content x3 wherein 0<x3≦0.3 and 0.55≦x3<1 and an impurity concentration of 3×1017 cm−3 or above.
    Type: Application
    Filed: August 9, 2002
    Publication date: March 13, 2003
    Inventors: Tatsuyuki Shinagawa, Norihiro Iwai, Noriyuki Yokouchi
  • Publication number: 20030043871
    Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.
    Type: Application
    Filed: August 6, 2002
    Publication date: March 6, 2003
    Inventors: Natsumi Ueda, Noriyuki Yokouchi, Tatsuyuki Shinagawa
  • Publication number: 20030015726
    Abstract: A semiconductor device including a substrate, a mesa post overlying the substrate and having a substantially cylindrical shape, a resin member surrounding the mesa post and a stress moderating member received in the mesa post for moderating stress between the mesa post and the resin member. The stress applied to the mesa post is reduced because the entire volume of the resin member is divided by the stress moderating member and each of the divided resin members reduces the stress.
    Type: Application
    Filed: June 26, 2002
    Publication date: January 23, 2003
    Inventors: Norihiro Iwai, Tatsuyuki Shinagawa, Noriyuki Yokouchi
  • Publication number: 20030012242
    Abstract: A surface emitting semiconductor laser device including a substrate, a bottom DBR, and a mesa post having a layer structure, the layer structure including a top DBR including a plurality of pairs, each of said pairs including an Al-containing high-reflectivity layer and an Al-containing low-reflectivity layer, an active layer structure sandwiched between the DBRs for emitting laser, and a current confinement layer disposed within or in a vicinity of one of the DBRs, the current confinement layer including a central current injection area and an annular current blocking area encircling the central current injection area, the annular current blocking area being formed by selective oxidation of Al in an AlxGa1−xAs layer (0.95≦X<1) having a thickness below 60 nm, the Al-containing low-reflectivity layer including Al at an atomic ratio not more than 0.8 and below 0.9.
    Type: Application
    Filed: June 26, 2002
    Publication date: January 16, 2003
    Inventors: Norihiro Iwai, Tatsuyuki Shinagawa, Noriyuki Yokouchi
  • Publication number: 20020167985
    Abstract: A surface emission semiconductor laser device includes a GaAs substrate and a layer structure having a plurality of constituent layers including an active layer, a pair of cladding layers, and a pair of multilayer semiconductor mirrors. One of the multilayer mirrors includes an AlAs layer having an Al-oxidized area forming a current confinement structure. At least one of the constituent layers, such as active layer or one of the multilayer mirrors, has an oxygen density of 1×1018 cm−3 or less. The laser device suppresses reduction of the optical output power with time.
    Type: Application
    Filed: April 17, 2002
    Publication date: November 14, 2002
    Inventors: Tatsuyuki Shinagawa, Noriyuki Yokouchi, Yasukazu Shiina, Akihiko Kasukawa
  • Publication number: 20020101899
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.
    Type: Application
    Filed: May 30, 2001
    Publication date: August 1, 2002
    Inventors: Noriyuki Yokouchi, Masato Tachibana, Natsumi Ueda, Tatsuyuki Shinagawa