Abstract: A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.

Abstract: A method for forming epitaxial material on base material includes forming a stress cap layer on a base layer of a first semiconductor material. Then, a stress is induced on the base layer, wherein the stress is a tensile stress or a compressive stress. The stress cap layer is removed. An epitaxial layer of a second semiconductor material is formed on the base layer, wherein the second semiconductor material is different from the first semiconductor material.

Abstract: A method for fabricating a semiconductor device. After forming SiGe epitaxial layer within the Core_p region, the hard mask is removed. A contact etch stop layer (CESL) is deposited on the composite spacer structure and the epitaxial layer. An ILD layer is deposited on the CESL. The ILD layer is polished to expose a top surface of the dummy gate. The dummy gate and a first portion of the first nitride-containing layer of the composite spacer structure are removed, thereby forming a gate trench and exposing the first gate dielectric layer. The first gate dielectric layer is removed from the gate trench, and a second portion of the first nitride-containing layer and the oxide layer are removed from the composite spacer structure, while leaving the second nitride-containing layer intact.

Abstract: A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a contact etch stop layer (CESL) on the gate structure, forming an interlayer dielectric (ILD) layer around the gate structure, performing a curing process so that an oxygen concentration of the CESL is different from the oxygen concentration of the ILD layer, and then performing a replacement metal gate process (RMG) process to transform the gate structure into a metal gate.

Abstract: A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.

Abstract: A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A topmost portion of the first bump is lower than the base, and a width of the first bump is larger than a width of each of the fin shaped structures.

Abstract: A fabricating method of a semiconductor structure includes providing a substrate divided into a dense region and an isolated region, wherein a first gate structure is disposed within the dense region, and a second gate structure is disposed within the isolated region. Then, a first material layer is formed to cover the first gate structure, the second gate structure and the substrate. Later, a second material layer is formed to cover the first material layer. After that, the second material layer within the dense region is entirely removed. Subsequently, a third material layer is formed to cover the isolated region and the dense region. Next, the substrate is etched to forma first recess at two sides of the first gate structure, and a second recess at two sides of the second gate structure. Finally, an epitaxial layer is formed to fill the first recess and the second recess.