Patents by Inventor Teruhiko Ienaga

Teruhiko Ienaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090078301
    Abstract: According to a solar cell module 100 of the present invention, a wiring member (first wiring member 11, second wiring member 12m or fourth wiring member 14) includes contact portions 11a, 12a, and 14a which contacts with the main surface of the solar cell 10, and noncontact portions 11b, 12b, and 14b continuous with the contact-portions 11a, 12a, and 14a and extending outward from the main surface of the solar cell 10. The noncontact portion is arranged to leave a space from a boundary portion ? between the main surface of the solar cell 10 and the side surface of the solar call 10.
    Type: Application
    Filed: September 24, 2008
    Publication date: March 26, 2009
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Masaki SHIMA, Teruhiko Ienaga, Hiroyuki Kannou
  • Publication number: 20080295881
    Abstract: On a projected plane in parallel to the main surface of the solar cell module 100, an output interconnection 10 includes: a first output interconnection section 10a arranged along an conductive member 4 in a power non-generating field; and a second output interconnection section 10b leading to the first output interconnection section 10a in a power generating section X.
    Type: Application
    Filed: May 21, 2008
    Publication date: December 4, 2008
    Applicant: SANYO ELECTRIC CO., LTD.
    Inventors: Takaaki NAKAJIMA, Atsushi Nakauchi, Teruhiko Ienaga, Shingo Okamoto
  • Patent number: 6380479
    Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: April 30, 2002
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Takuo Nakai, Hiroyuki Taniguchi, Teruhiko Ienaga, Yasuo Kadonaga
  • Publication number: 20010029978
    Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
    Type: Application
    Filed: March 21, 2001
    Publication date: October 18, 2001
    Applicant: Sanyo
    Inventors: Takuo Nakai, Hiroyuki Taniguchi, Teruhiko Ienaga, Yasuo Kadonaga
  • Patent number: 6207890
    Abstract: A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
    Type: Grant
    Filed: July 29, 1999
    Date of Patent: March 27, 2001
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Takuo Nakai, Hiroyuki Taniguchi, Teruhiko Ienaga, Yasuo Kadonaga
  • Patent number: D573943
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: July 29, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayoshi Ono, Tsuyoshi Takahama, Teruhiko Ienaga, Toshio Yagiura, Shingo Okamoto, Atsushi Nakauchi, Takaaki Nakajima
  • Patent number: D573944
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: July 29, 2008
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Masayoshi Ono, Tsuyoshi Takahama, Teruhiko Ienaga, Toshio Yagiura, Shingo Okamoto, Atsushi Nakauchi, Takaaki Nakajima