Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.

Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.

Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.

Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.

Abstract: The present application discloses a deflector including a substrate portion, a movable portion, a reflective portion, a support portion, and a moving mechanism. The movable portion is supported by a first end of the support portion. A second end of the support portion is supported by the substrate portion. An end of the movable portion is capable of coming into contact with the substrate portion. The reflective portion is formed on the movable portion. The moving mechanism is capable of driving the movable portion so as to bring the movable portion into at least any one of a first state, a second state, a third state, and a fourth state.

Abstract: A solid oxide fuel cell includes an Si support substrate having a through hole, an electrolyte film formed on the surface of an Si support substrate and containing a solid oxide having oxygen ion conductivity, a first electrode formed on a surface of the electrolyte film (surface on the side opposite to the Si support substrate), and a second electrode formed at least on a surface exposed from the through hole in a rear face of the electrolyte film. The electrolyte film includes a porous layer including the solid oxide and containing pores inside, a first dense layer formed on a surface of the porous layer (surface on the side opposite to the Si support substrate), and a second dense layer formed at the interface between a rear face of the porous layer and the Si support substrate.

Abstract: A solid oxide fuel cell is disclosed herein. The fuel cell includes a silicon substrate, an electrolyte film laminated on the silicon substrate, and a gas flow path formed inside the silicon substrate. The electrolyte film is opposed to the gas flow path via an electrode film. A portion of a side wall of the gas flow path has a fillet shape, and the portion is close to the electrolyte film.

Abstract: A fuel cell system may include a first fuel cell provided on a first substrate; a second fuel cell provided on a second substrate, and having a power generation capacity higher than a power generation capacity of the first fuel cell; a first heater provided at the first fuel cell; a second heater provided at the second fuel cell; and a battery, wherein the first heater heats the first fuel cell by using power supplied from the battery, and wherein the second heater heats the second fuel cell by using power supplied from the first fuel cell.

Abstract: A fuel cell disclosed herein may comprise: a substrate provided with a recess through which fuel gas passes; an electrolyte membrane covering an opening of the recess; an insulating film covering one surface of the electrolyte membrane and having a through hole reaching the electrolyte membrane; a first electrode in contact with the one surface of the electrolyte membrane in the through hole; a second electrode in contact with the other surface of the electrolyte membrane; and a heater disposed in the insulating film at a position adjacent to the through hole.

Abstract: An etching apparatus having a liquid bath storing an etching liquid, a substrate installation part capable of supporting the semiconductor substrate in vertical placement at a position at which a treatment surface of the semiconductor substrate is immersed in the etching liquid, a sample electrode provided at the substrate installation part and electrically connected to the semiconductor substrate, a counter electrode disposed at a position at which the counter electrode is immersed in the etching liquid in the liquid bath, a light source irradiating the treatment surface of the semiconductor substrate with light, and an irradiation window provided between the treatment surface of the semiconductor substrate and the light source and at a position separated from the semiconductor substrate in a horizontal direction.

Abstract: The present application discloses a deflector including a substrate portion, a movable portion, a reflective portion, a support portion, and a moving mechanism. The movable portion is supported by a first end of the support portion. A second end of the support portion is supported by the substrate portion. An end of the movable portion is capable of coming into contact with the substrate portion. The reflective portion is formed on the movable portion. The moving mechanism is capable of driving the movable portion so as to bring the movable portion into at least any one of a first state, a second state, a third state, and a fourth state.

Abstract: Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.

Abstract: A MEMS device includes a substrate, a moving part including a magnetic material and configured to tilt relative to the substrate, a first magnetic pole and a second magnetic pole configured to apply a magnetic field to the magnetic material, and a magnetic field detector configured to detect the magnetic field of the magnetic material. In the MEMS device, the first magnetic pole and the second magnetic pole are disposed on one side of the moving part, the one side being a side on which the magnetic material is located. The magnetic field detector is disposed between the first magnetic pole and the second magnetic pole. A distance between the first magnetic pole and the second magnetic pole is shorter than a length of the moving part in a direction from the first magnetic pole toward the second magnetic pole.

Abstract: Teaching disclosed herein is an apparatus comprising a support layer. The support layer may be adapted for supporting a heat generator, wherein the support layer includes a flow passage. The flow passage may seal working fluid therein. The flow passage may extend along a thickness direction of the support layer.

Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.

Abstract: In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.

Abstract: A dynamic quantity sensor includes a force receiving portion, a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving portion receives; and a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the force receiving portion receives.

Abstract: A MEMS device includes a substrate, a moving part including a magnetic material and configured to tilt relative to the substrate, a first magnetic pole and a second magnetic pole configured to apply a magnetic field to the magnetic material, and a magnetic field detector configured to detect the magnetic field of the magnetic material. In the MEMS device, the first magnetic pole and the second magnetic pole are disposed on one side of the moving part, the one side being a side on which the magnetic material is located. The magnetic field detector is disposed between the first magnetic pole and the second magnetic pole. A distance between the first magnetic pole and the second magnetic pole is shorter than a length of the moving part in a direction from the first magnetic pole toward the second magnetic pole.

Abstract: A structure having a first movable portion displaced perpendicular to a substrate surface and a second movable portion displaced parallel to the substrate surface is realized by a laminated structure employing a nested structure for the first portion and the second portion. The laminated structure is provided with inner and outer movable portions. A y spring is connected to the outer portion, and the outer portion is supported in a y-axis direction by the y spring at a height apart from an outer substrate. A z spring is connected to the inner portion, and the inner portion is supported in a z-axis direction by the z spring at a height apart from the outer substrate. The outer portion and the z spring are at different heights from the substrate, and the z spring overpasses across the outer portion at a height apart from the outer movable portion.

Abstract: When forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.