Patents by Inventor Teruhisa Nakai

Teruhisa Nakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element
    Patent number: 8946772
    Abstract: A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: February 3, 2015
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Hiroaki Okagawa, Hiromitsu Kudo, Teruhisa Nakai, Seong-Jin Kim
  • SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT
    Publication number: 20110198560
    Abstract: A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space.
    Type: Application
    Filed: February 13, 2009
    Publication date: August 18, 2011
    Applicant: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Hiroaki Okagawa, Hiromitsu Kudo, Teruhisa Nakai, Seong-Jin Kim
  • Method for removing resist pattern and method for manufacturing semiconductor device
    Patent number: 7875419
    Abstract: It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: January 25, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masaharu Nagai, Kiyofumi Ogino, Teruhisa Nakai, Eiji Shioda
  • Method for removing resist pattern and method for manufacturing semiconductor device
    Publication number: 20040091820
    Abstract: It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.
    Type: Application
    Filed: October 29, 2003
    Publication date: May 13, 2004
    Inventors: Masaharu Nagai, Kiyofumi Ogino, Teruhisa Nakai, Eiji Shioda