Patents by Inventor Teruo Suzuki

Teruo Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11105830
    Abstract: A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: August 31, 2021
    Assignee: Ablic Inc.
    Inventor: Teruo Suzuki
  • Publication number: 20200292582
    Abstract: A voltage detector includes a first voltage detection circuit, a second voltage detection circuit, and a voltage divider circuit having a first node for providing a first divided voltage, and a second node for providing a second divided voltage. The second voltage detection circuit has a comparator circuit including a first input end connected to the first node and a second input end connected to a reference voltage. The first voltage detection circuit has a first NMOS transistor including a gate to which the second divided voltage is applied, and a constant current source with one end connected to the first NMOS transistor. The first NMOS transistor is configured to turn on in response to the second divided voltage being higher than a second threshold voltage and turn off in response to the second divided voltage being lower than the second threshold voltage.
    Type: Application
    Filed: February 24, 2020
    Publication date: September 17, 2020
    Inventor: Teruo SUZUKI
  • Publication number: 20190353616
    Abstract: A method identifies the molecular structure of each component in a multicomponent mixture. The method includes (1) subjecting the multicomponent mixture to mass spectrometry to identify the formula of a molecule attributed to each obtained peak, and to identify abundance of the molecule; (2) subjecting the multicomponent mixture to collision induced dissociation; (3) performing mass spectrometry on each fragment ion generated via the collision induced dissociation in (2) to identify the core structure forming each fragment ion and abundance thereof; (4) dividing the molecules attributed to each peak in (1) into “classes” based on “a type and number of heteroatoms, and a DBE value”, and on all the molecules belonging to each “class”, estimating the existence state and abundance thereof; and (5) determining the core structure forming each molecule, for which the existence state is estimated in (4), and determining and assigning a side chain and a cross-link thereto.
    Type: Application
    Filed: March 27, 2018
    Publication date: November 21, 2019
    Applicants: JAPAN PETROLEUM ENERGY CENTER, JXTG NIPPON OIL & ENERGY CORPORATION, IDEMITSU KOSAN CO., LTD., COSMO OIL CO., LTD.
    Inventors: Teruo SUZUKI, Keita KATANO, Ryuzo TANAKA, Shogo TERATANI
  • Publication number: 20190181132
    Abstract: A semiconductor device includes: a first domain including a first high power source line, a first low power source line, and a first power clamp circuit; a second domain including a second high power source line, a second low power source line, and a second power clamp circuit; a third power clamp circuit provided between the second high power source line and the first low power source line; a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line.
    Type: Application
    Filed: February 15, 2019
    Publication date: June 13, 2019
    Applicant: SOCIONEXT INC.
    Inventor: Teruo Suzuki
  • Patent number: 10249606
    Abstract: A semiconductor device includes: a first domain including a first high power source line, a first low power source line, and a first power clamp circuit; a second domain including a second high power source line, a second low power source line, and a second power clamp circuit; a third power clamp circuit provided between the second high power source line and the first low power source line; a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: April 2, 2019
    Assignee: SOCIONEXT INC.
    Inventor: Teruo Suzuki
  • Patent number: 10061334
    Abstract: A voltage regulator includes an output transistor controlled by an error amplifier, first and second resistors connected in series between an output terminal and a ground terminal via a first node, third and fourth resistors connected in series between a load voltage monitoring terminal and the ground terminal via a second node, and a fifth resistor and a switching transistor connected in series between the first node and the ground terminal. When a voltage which is supplied to a load connected to the output terminal drops due to a parasitic resistance, a voltage at the second node falls below that of the first node. The switching transistor, then, turns on to connect the fifth resistor in parallel to the second resistor to lower the voltage at the first node. Feedback of this voltage to the error amplifier raises the voltage at the output terminal to a desired value.
    Type: Grant
    Filed: October 24, 2017
    Date of Patent: August 28, 2018
    Assignee: ABLIC INC.
    Inventor: Teruo Suzuki
  • Publication number: 20180120875
    Abstract: A voltage regulator includes an output transistor controlled by an error amplifier, first and second resistors connected in series between an output terminal and a ground terminal via a first node, third and fourth resistors connected in series between a load voltage monitoring terminal and the ground terminal via a second node, and a fifth resistor and a switching transistor connected in series between the first node and the ground terminal. When a voltage which is supplied to a load connected to the output terminal drops due to a parasitic resistance, a voltage at the second node falls below that of the first node. The switching transistor, then, turns on to connect the fifth resistor in parallel to the second resistor to lower the voltage at the first node. Feedback of this voltage to the error amplifier raises the voltage at the output terminal to a desired value.
    Type: Application
    Filed: October 24, 2017
    Publication date: May 3, 2018
    Inventor: Teruo SUZUKI
  • Patent number: 9829900
    Abstract: The voltage regulator includes an overheat protection circuit. The overheat protection circuit includes: a temperature sensing circuit; a voltage difference sensing circuit configured to output a current depending on a voltage difference between a power source voltage to be supplied to a power supply terminal and the output voltage; an output current monitoring circuit; a second reference voltage circuit configured to generate a second reference voltage; a comparator circuit configured to compare an output voltage of the temperature sensing circuit and the second reference voltage to each other; and an overheat protection transistor is configured to turn off the output transistor when the result of the comparison indicates an overheated state. The second reference voltage of the second reference voltage circuit is controlled based on an output current of the voltage difference sensing circuit and on an output current of the output current monitoring circuit.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: November 28, 2017
    Assignee: SII SEMICONDUCTOR CORPORATION
    Inventor: Teruo Suzuki
  • Patent number: 9720428
    Abstract: Provided is a voltage regulator having excellent transient response characteristics. The voltage regulator includes: a first switch connected between a gate of an output transistor and a phase compensation capacitor; a voltage follower having an input terminal connected to an output terminal of a differential amplifier; a second switch connected between an output terminal of the voltage follower and the phase compensation capacitor; and a comparator configured to compare a reference voltage and a feedback voltage. The first switch and the second switch are controlled with an output signal of the comparator.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: August 1, 2017
    Assignee: SII Semiconductor Corporation
    Inventor: Teruo Suzuki
  • Publication number: 20170160764
    Abstract: The voltage regulator includes an overheat protection circuit. The overheat protection circuit includes: a temperature sensing circuit; a voltage difference sensing circuit configured to output a current depending on a voltage difference between a power source voltage to be supplied to a power supply terminal and the output voltage; an output current monitoring circuit; a second reference voltage circuit configured to generate a second reference voltage; a comparator circuit configured to compare an output voltage of the temperature sensing circuit and the second reference voltage to each other; and an overheat protection transistor is configured to turn off the output transistor when the result of the comparison indicates an overheated state. The second reference voltage of the second reference voltage circuit is controlled based on an output current of the voltage difference sensing circuit and on an output current of the output current monitoring circuit.
    Type: Application
    Filed: December 2, 2016
    Publication date: June 8, 2017
    Inventor: Teruo SUZUKI
  • Patent number: 9639101
    Abstract: To provide a voltage regulator capable of maintaining the accuracy of an output voltage even if it is set to an arbitrary output voltage. A voltage regulator includes an output transistor comprised of an NMOS transistor having a backgate grounded, an error amplifier circuit configured to amplify and output a difference between a divided voltage obtained by dividing an output voltage outputted from the output transistor and a reference voltage and thereby to control a gate of the output transistor, a constant voltage circuit, and a transistor having a gate inputted with a voltage of the constant voltage circuit, a drain connected to the gate of the output transistor, and a source connected to a source of the output transistor.
    Type: Grant
    Filed: March 20, 2015
    Date of Patent: May 2, 2017
    Assignee: SII SEMICONDUCTOR CORPORATION
    Inventor: Teruo Suzuki
  • Patent number: 9559094
    Abstract: A semiconductor device includes a first semiconductor region that has an external profile including at least one corner, and that includes a semiconductor of a first conductivity type, and a first insulation region that surrounds an outer periphery of the first semiconductor region, and that includes an insulator that, at a corner portion corresponding to the corner, has a depth deeper than a depth at a location other than the corner portion. The semiconductor device further includes a second semiconductor region that surrounds an outer periphery of the first insulation region, and that includes a semiconductor of a second conductivity type, and a second insulation region that surrounds an outer periphery of the second semiconductor region, and that includes an insulator that is deeper than the depth of the first insulation region at the location other than the corner portion.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: January 31, 2017
    Assignee: SOCIONEXT INC.
    Inventor: Teruo Suzuki
  • Publication number: 20160372453
    Abstract: A semiconductor device includes: a first domain including a first high power source line, a first low power source line, and a first power clamp circuit; a second domain including a second high power source line, a second low power source line, and a second power clamp circuit; a third power clamp circuit provided between the second high power source line and the first low power source line; a first relay circuit that receives a signal from the first domain and outputs the signal to the second domain; and a second relay circuit that receives a signal from the second domain and outputs the signal to the first domain, wherein the first relay circuit and the second relay circuit have a circuit portion that is connected to the second high power source line and the first low power source line.
    Type: Application
    Filed: May 31, 2016
    Publication date: December 22, 2016
    Inventor: Teruo Suzuki
  • Patent number: 9459641
    Abstract: Provided is a variable output voltage regulator capable of reducing heat generation during an overcurrent protection operation even when a setting value of an output voltage is high. The variable output voltage regulator can change an output voltage by trimming a resistor of a voltage dividing circuit in response to a trimming signal output from a trimming signal generation circuit. The trimming signal is used to change a limiting voltage of a fold-back type overcurrent protection circuit.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: October 4, 2016
    Assignee: SII SEMICONDUCTOR CORPORATION
    Inventors: Kaoru Sakaguchi, Teruo Suzuki
  • Publication number: 20160226378
    Abstract: Provided is a voltage regulator having excellent transient response characteristics. The voltage regulator includes: a first switch connected between a gate of an output transistor and a phase compensation capacitor; a voltage follower having an input terminal connected to an output terminal of a differential amplifier; a second switch connected between an output terminal of the voltage follower and the phase compensation capacitor; and a comparator configured to compare a reference voltage and a feedback voltage. The first switch and the second switch are controlled with an output signal of the comparator.
    Type: Application
    Filed: February 2, 2016
    Publication date: August 4, 2016
    Inventor: Teruo SUZUKI
  • Patent number: 9385584
    Abstract: Provided is a voltage regulator including a leakage current correction circuit capable of keeping the accuracy of an output voltage of the voltage regulator even when an output voltage of a reference voltage circuit is decreased due to the influence of a leakage current. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current correction circuit connected to an output terminal of the voltage divider circuit. The leakage current correction circuit is configured to decrease the feedback voltage to prevent the output voltage from dropping at high temperature.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: July 5, 2016
    Assignee: SII Semiconductor Corporation
    Inventors: Yuji Kobayashi, Teruo Suzuki
  • Patent number: 9372489
    Abstract: Provided is a voltage regulator including a leakage current sink circuit capable of suppressing an influence of a leakage current of an output transistor at high temperature, and reducing power consumption of the voltage regulator at normal temperature. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current sink circuit connected to an output terminal and configured to be prevented from operating at normal temperature, and suppress an influence of a leakage current from the output transistor only at high temperature.
    Type: Grant
    Filed: October 17, 2014
    Date of Patent: June 21, 2016
    Assignee: SII SEMICONDUCTOR CORPORATION
    Inventors: Yuji Kobayashi, Teruo Suzuki
  • Publication number: 20150364463
    Abstract: A semiconductor device includes a first semiconductor region that has an external profile including at least one corner, and that includes a semiconductor of a first conductivity type, and a first insulation region that surrounds an outer periphery of the first semiconductor region, and that includes an insulator that, at a corner portion corresponding to the corner, has a depth deeper than a depth at a location other than the corner portion. The semiconductor device further includes a second semiconductor region that surrounds an outer periphery of the first insulation region, and that includes a semiconductor of a second conductivity type, and a second insulation region that surrounds an outer periphery of the second semiconductor region, and that includes an insulator that is deeper than the depth of the first insulation region at the location other than the corner portion.
    Type: Application
    Filed: May 28, 2015
    Publication date: December 17, 2015
    Inventor: Teruo SUZUKI
  • Publication number: 20150277458
    Abstract: To provide a voltage regulator capable of maintaining the accuracy of an output voltage even if it is set to an arbitrary output voltage. A voltage regulator includes an output transistor comprised of an NMOS transistor having a backgate grounded, an error amplifier circuit configured to amplify and output a difference between a divided voltage obtained by dividing an output voltage outputted from the output transistor and a reference voltage and thereby to control a gate of the output transistor, a constant voltage circuit, and a transistor having a gate inputted with a voltage of the constant voltage circuit, a drain connected to the gate of the output transistor, and a source connected to a source of the output transistor.
    Type: Application
    Filed: March 20, 2015
    Publication date: October 1, 2015
    Inventor: Teruo SUZUKI
  • Publication number: 20150108953
    Abstract: Provided is a voltage regulator including a leakage current sink circuit capable of suppressing an influence of a leakage current of an output transistor at high temperature, and reducing power consumption of the voltage regulator at normal temperature. The voltage regulator includes: a reference voltage circuit configured to output a reference voltage; an output transistor configured to output an output voltage; a voltage divider circuit configured to divide the output voltage to output a feedback voltage; an error amplifier circuit configured to amplify a difference between the reference voltage and the feedback voltage, and output the amplified difference to control a gate of the output transistor; and a leakage current sink circuit connected to an output terminal and configured to be prevented from operating at normal temperature, and suppress an influence of a leakage current from the output transistor only at high temperature.
    Type: Application
    Filed: October 17, 2014
    Publication date: April 23, 2015
    Inventors: Yuji KOBAYASHI, Teruo SUZUKI