Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: An information processing system includes an image reading device and an information processing device. The image reading device reads a document to generate target image data. The information processing device processes the target image data. The information processing device includes a first conversion processing section, a second conversion processing section, and a selection section. The first conversion processing section is capable of converting image data to character code data. The second conversion processing section is capable of converting image data to character code data. The selection section selects conversion of the target image data to character code data by the first conversion processing section or the second conversion processing section.

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

Abstract: Proposed are a new and improved imaging device, imaging device control unit, and imaging method capable of stably adjusting various parameters of the imaging device without significantly changing the design of the imaging device. Provided is an imaging device including a rotating shaft insertion portion allowed to be attached to and detached from a housing, a rotating shaft having an operation member being inserted into the rotating shaft insertion portion, a rotation amount detector that detects a rotation amount of the rotating shaft, and a controller that controls a control target based on the rotation amount.

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Abstract: The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor.

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co

Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co

Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

Abstract: A particle size distribution measurement device includes a cell holding body 31 that holds a measurement cell 2 containing a measurement sample and a dispersion medium and a reference cell 6 containing a reference sample and is rotated by a motor 322, and a cell discrimination mechanism 7 that discriminates the cells 2, 6 passing through a predetermined rotation position by using a magnetic force or electrostatic capacitance.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.

Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

Abstract: Provided is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor includes a first photoelectric conversion module that includes a first photoelectric conversion unit that to performs photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode with the first photoelectric conversion unit between the first upper electrode and the first lower electrode, and a first spectral correction unit between the first upper electrode and the first lower electrode stacked on the first photoelectric conversion unit and a second photoelectric conversion unit that performs photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range is different from the first wavelength range.

Abstract: [Problem] To provide an aqueous coating agent composition (in particular, an aqueous coating composition for lubricating films that contains a solid lubricant) which as a whole is excellent in terms of flowability, applicability, and storage stability and which is capable of forming satisfactory and smooth coating films effective in stick-slip inhibition. [Solution] The problem can be solved with an aqueous coating agent composition which comprises (A) a curable resin in an aqueous emulsion form, (B) a surfactant, (C) solid particles, (D) one or more nitrogenous heterocyclic compounds, (E) a film-forming silicone in an aqueous emulsion form, and (F) water. In particular, it is preferable that the (C) component comprise a solid lubricant. In view of the environmental regulations, it is especially preferable that the (D) component be 1,3-dimethyl-2-imidazolidinone.

Abstract: An object of the present claimed invention is to improve cell cooling performance, keep a temperature of a dispersion medium constant, and improve measurement accuracy. The particle size distribution measuring device of this invention comprises a cell holding body 31 that holds a cell 2 housing a measurement sample and that is rotated by a motor 322, a case (C) having a housing space (S) for rotatably housing the cell holding body 31, and a cooling mechanism 8 for cooling the cell 2. The cooling mechanism 8 comprises a cooler 81, and a supply channel 82 that supplies a gas that has been cooled by the cooler 81 to the housing space (S).

Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.