Patents by Inventor Tetsuji Yamaguchi

Tetsuji Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240244855
    Abstract: A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter.
    Type: Application
    Filed: March 29, 2024
    Publication date: July 18, 2024
    Applicant: SONY GROUP CORPORATION
    Inventors: Tetsuji YAMAGUCHI, Atsushi TODA, Itaru OSHIYAMA
  • Patent number: 12027565
    Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: July 2, 2024
    Assignee: SONY GROUP CORPORATION
    Inventors: Hideaki Togashi, Fumihiko Koga, Tetsuji Yamaguchi, Shintarou Hirata, Taiichiro Watanabe, Yoshihiro Ando, Toyotaka Kataoka, Satoshi Keino, Yukio Kaneda
  • Patent number: 12029054
    Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co
    Type: Grant
    Filed: April 19, 2023
    Date of Patent: July 2, 2024
    Assignee: Sony Group Corporation
    Inventors: Tetsuji Yamaguchi, Atsushi Toda, Itaru Oshiyama
  • Patent number: 11991889
    Abstract: There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: May 21, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Keisuke Hatano, Tetsuji Yamaguchi, Shintarou Hirata
  • Patent number: 11981728
    Abstract: Disclosed is an isolated monoclonal antibody comprising a heavy chain and a light chain, wherein the heavy chain comprises CDR1, CDR2 and CDR3 consisting of amino acid sequences set forth in SEQ ID NOs: 1, 2 and 3, respectively, and the light chain comprises CDR1, CDR2 and CDR3 consisting of amino acid sequences set forth in SEQ ID NOs: 4, 5 and 6, respectively.
    Type: Grant
    Filed: February 18, 2022
    Date of Patent: May 14, 2024
    Assignee: SYSMEX CORPORATION
    Inventors: Kouji Sakaguchi, Naoya Okitsu, Minori Yamada, Naoko Kitamura, Tetsuji Yamaguchi
  • Publication number: 20240147091
    Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.
    Type: Application
    Filed: November 2, 2023
    Publication date: May 2, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Keisuke HATANO, Ryosuke NAKAMURA, Yuji UESUGI, Fumihiko KOGA, Tetsuji YAMAGUCHI
  • Patent number: 11971339
    Abstract: A particle size distribution measurement device includes a cell holding body 31 that holds a measurement cell 2 containing a measurement sample and a dispersion medium and a reference cell 6 containing a reference sample and is rotated by a motor 322, and a cell discrimination mechanism 7 that discriminates the cells 2, 6 passing through a predetermined rotation position by using a magnetic force or electrostatic capacitance.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: April 30, 2024
    Assignees: Horiba, Ltd., Eppendorf Himac Technologies Co., Ltd.
    Inventors: Tetsuji Yamaguchi, Hitoshi Watanabe, Hidetaka Osawa, Ken Asakura, Kenichi Nemoto
  • Publication number: 20240107157
    Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.
    Type: Application
    Filed: December 6, 2023
    Publication date: March 28, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Keisuke HATANO, Fumihiko KOGA, Tetsuji YAMAGUCHI, Shinichiro IZAWA
  • Patent number: 11929376
    Abstract: The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.
    Type: Grant
    Filed: March 15, 2023
    Date of Patent: March 12, 2024
    Assignee: Sony Group Corporation
    Inventor: Tetsuji Yamaguchi
  • Publication number: 20240081150
    Abstract: An electromagnetic wave detection device including: an electromagnetic wave absorption layer including a low-dimensional electronic material that absorbs an electromagnetic wave; a first electrode provided on a first principal surface of the electromagnetic wave absorption layer; a second electrode provided on a second principal surface of the electromagnetic wave absorption layer, the second principal surface being opposed to the first principal surface; and a read circuit that reads, from the second electrode, a signal generated by thermoelectric conversion of heat generated by the electromagnetic wave absorption layer that has absorbed the electromagnetic wave.
    Type: Application
    Filed: September 18, 2020
    Publication date: March 7, 2024
    Inventor: Tetsuji YAMAGUCHI
  • Publication number: 20240055534
    Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.
    Type: Application
    Filed: October 24, 2023
    Publication date: February 15, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventor: Tetsuji YAMAGUCHI
  • Publication number: 20240049484
    Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.
    Type: Application
    Filed: October 19, 2023
    Publication date: February 8, 2024
    Applicant: SONY GROUP CORPORATION
    Inventor: Tetsuji YAMAGUCHI
  • Publication number: 20240035947
    Abstract: Provided is a density gradient liquid production apparatus for producing a density gradient liquid in a measurement cell for a centrifugal sedimentation type particle diameter distribution measurement device and comprises a first solution preparation unit that prepares a first solution with a predetermined target concentration and a first density by mixing a plurality of first reference solutions each of whose concentrations of an agglomeration inhibiting component that inhibits agglomeration of particles differs, and a second solution preparation unit that prepares a second solution with the predetermined target concentration and a second density that is different from the first density by mixing a plurality of second reference solutions each of whose concentrations of the agglomeration inhibiting component differs, and a mixed solution preparation unit that creates a mixed solution with the target concentration by mixing the first solution and the second solution and supplies the created mixed solution to t
    Type: Application
    Filed: November 15, 2021
    Publication date: February 1, 2024
    Inventor: Tetsuji YAMAGUCHI
  • Publication number: 20240032315
    Abstract: A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.
    Type: Application
    Filed: October 2, 2023
    Publication date: January 25, 2024
    Applicant: Sony Group Corporation
    Inventor: Tetsuji Yamaguchi
  • Patent number: 11882359
    Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: January 23, 2024
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Keisuke Hatano, Fumihiko Koga, Tetsuji Yamaguchi, Shinichiro Izawa
  • Patent number: 11869907
    Abstract: A solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity are provided. The solid-state imaging device includes a semiconductor layer in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer, and a longitudinal transistor Tr1 in which a gate electrode is formed to be embedded in the semiconductor layer from a surface of the semiconductor layer. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion of the gate electrode of the longitudinal transistor Tr1 embedded in the semiconductor substrate and is connected to a channel formed by the longitudinal transistor Tr1.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: January 9, 2024
    Assignee: SONY GROUP CORPORATION
    Inventor: Tetsuji Yamaguchi
  • Publication number: 20240006426
    Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.
    Type: Application
    Filed: September 19, 2023
    Publication date: January 4, 2024
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Hideaki TOGASHI, Tetsuji YAMAGUCHI, Nobuhiro KAWAI, Koji SEKIGUCHI, Masahiro JOEI, Kenichi MURATA, Shintarou HIRATA, Yuta HASEGAWA, Yoshito NAGASHIMA
  • Patent number: 11855227
    Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.
    Type: Grant
    Filed: May 18, 2022
    Date of Patent: December 26, 2023
    Assignee: Sony Semiconductor Solutions Corporation
    Inventor: Tetsuji Yamaguchi
  • Patent number: 11838662
    Abstract: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.
    Type: Grant
    Filed: March 8, 2022
    Date of Patent: December 5, 2023
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Keisuke Hatano, Ryosuke Nakamura, Yuji Uesugi, Fumihiko Koga, Tetsuji Yamaguchi
  • Patent number: 11839094
    Abstract: A solid-state imaging element including a phase difference detection pixel pair that includes first and second phase difference detection pixels is provided. In particular, each phase difference detection pixel of the first and second phase difference detection pixels includes a first photoelectric conversion unit arranged at an upper side of a semiconductor substrate and a second photoelectric conversion unit arranged within the semiconductor substrate. The first photoelectric conversion film may be an organic film. In addition, phase difference detection pixels may be realized without using a light shielding film.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: December 5, 2023
    Assignee: Sony Group Corporation
    Inventor: Tetsuji Yamaguchi