Abstract: A method of processing a wafer includes a cutting step of cutting the face side of the wafer with a cutting blade to form grooves therein along projected dicing lines, a first inspecting step of capturing an image of the grooves formed in the cutting step and inspecting a state of a chip in the captured image of the grooves, a protecting member sticking step of sticking a protective member to the face side of the wafer, a grinding step of holding the protective member side of the wafer on a chuck table and grinding a reverse side of the wafer to thin the wafer to a finished thickness, thereby dividing the wafer into device chips, a second inspecting step of capturing an image of the grooves exposed on the reverse side of the wafer and inspecting a state of a chip in the captured image of the grooves.

Abstract: A wafer processing method includes: a bonding step of bonding a front surface side of a first wafer chamfered at a peripheral edge portion thereof to a front surface side of a second wafer; a grinding step of holding a back surface side of the second wafer by a chuck table and grinding a back surface of the first wafer to thin the first wafer to a finished thickness, after the bonding step; and a modified layer forming step of applying along a boundary between a device region and a peripheral surplus region of the first wafer a laser beam of such a wavelength as to be transmitted through the first wafer to form an annular modified layer inside the first wafer in the vicinity of the front surface of the first wafer, before the grinding step.

Abstract: A processing method of a wafer includes a cut groove forming step of carrying out cutting with a cutting blade along streets from the back surface of the wafer to form cut grooves, a wafer dividing step of irradiating the wafer with a laser beam along the cut grooves and dividing the wafer into individual chips after the cut groove forming step is carried out, and a die bonding layer disposing step of applying a liquid die bonding agent on the back surface of the wafer and curing it to form the chips on which die bonding layers are formed on the back surface. According to the processing method of the present invention, the occurrence of clogging in the cutting blade and generation of a burr or the like in the die bonding layers can be prevented.

Abstract: A wafer processing method includes: a bonding step of bonding a front surface side of a first wafer chamfered at a peripheral edge portion thereof to a front surface side of a second wafer; a grinding step of holding a back surface side of the second wafer by a chuck table and grinding a back surface of the first wafer to thin the first wafer to a finished thickness, after the bonding step; and a modified layer forming step of applying along a boundary between a device region and a peripheral surplus region of the first wafer a laser beam of such a wavelength as to be transmitted through the first wafer to form an annular modified layer inside the first wafer in the vicinity of the front surface of the first wafer, before the grinding step.

Abstract: A method of processing a wafer includes a cutting step of cutting the face side of the wafer with a cutting blade to form grooves therein along projected dicing lines, a first inspecting step of capturing an image of the grooves formed in the cutting step and inspecting a state of a chip in the captured image of the grooves, a protecting member sticking step of sticking a protective member to the face side of the wafer, a grinding step of holding the protective member side of the wafer on a chuck table and grinding a reverse side of the wafer to thin the wafer to a finished thickness, thereby dividing the wafer into device chips, a second inspecting step of capturing an image of the grooves exposed on the reverse side of the wafer and inspecting a state of a chip in the captured image of the grooves.

Abstract: A method of processing a wafer includes a laser beam applying step of applying a laser beam to the wafer to form modified layers in the inside of the wafer along division lines and to extend device layer splitting cracks from the modified layers to the front surface of the wafer. After the laser beam applying step is performed, a cutting step of cutting the wafer is performed by a cutting blade from the back surface side to form cut grooves and to remove the modified layers. Therefore, the modified layers are not left on chips, and the die strength of the chips is enhanced.

Abstract: A wafer processing method for divides a wafer into individual device chips along a plurality of division lines. The method includes forming a dividing groove along each division line formed on the front side of the wafer, the dividing groove having a depth corresponding to the finished thickness of each device chip, thinning the wafer to expose the dividing groove to the back side of the wafer, thereby dividing the wafer into the individual device chips, applying a liquid resin for die bonding to the back side of the wafer and next solidifying the liquid resin applied to the back side of the wafer, thereby forming a die bonding resin film having a predetermined thickness on the back side of each device chip, and isolating each device chip from the wafer.

Abstract: A method of processing a wafer includes a laser beam applying step of applying a laser beam to the wafer to form modified layers in the inside of the wafer along division lines and to extend device layer splitting cracks from the modified layers to the front surface of the wafer. After the laser beam applying step is performed, a cutting step of cutting the wafer is performed by a cutting blade from the back surface side to form cut grooves and to remove the modified layers. Therefore, the modified layers are not left on chips, and the die strength of the chips is enhanced.

Abstract: A processing method of a wafer includes a cut groove forming step of carrying out cutting with a cutting blade along streets from the back surface of the wafer to form cut grooves, a wafer dividing step of irradiating the wafer with a laser beam along the cut grooves and dividing the wafer into individual chips after the cut groove forming step is carried out, and a die bonding layer disposing step of applying a liquid die bonding agent on the back surface of the wafer and curing it to form the chips on which die bonding layers are formed on the back surface. According to the processing method of the present invention, the occurrence of clogging in the cutting blade and generation of a burr or the like in the die bonding layers can be prevented.

Abstract: A wafer is divided into device chips each of which is surrounded by a mold resin. The wafer has a plurality of devices arranged like a matrix with a spacing having a predetermined width, the front side of each device being covered with the mold resin, the spacing being filled with the mold resin to form a street between any adjacent ones of the devices. The wafer processing method includes a division start point forming step of forming a division start point along each street at the lateral center of the mold resin filling the spacing and a dividing step of applying an external force to the wafer after performing the division start point forming step, thereby laterally dividing each street into two parts at the division start point to obtain the device chips divided from each other, each device chip being surrounded by the mold resin.

Abstract: A wafer processing method includes a first grinding step and a second grinding step. In the first grinding step, first grinding abrasives are moved in a processing feed direction that is a direction orthogonal to a holding surface of a chuck table of grinding apparatus and a wafer is ground to form a first circular recess in the back surface of the wafer. In the second grinding step, second grinding abrasives formed of finer abrasive grains than the first grinding abrasives are moved down in an oblique direction from the center side of the wafer toward the periphery of the wafer and the first circular recess is ground.

Abstract: A wafer processing method for divides a wafer into individual device chips along a plurality of division lines. The method includes forming a dividing groove along each division line formed on the front side of the wafer, the dividing groove having a depth corresponding to the finished thickness of each device chip, thinning the wafer to expose the dividing groove to the back side of the wafer, thereby dividing the wafer into the individual device chips, applying a liquid resin for die bonding to the back side of the wafer and next solidifying the liquid resin applied to the back side of the wafer, thereby forming a die bonding resin film having a predetermined thickness on the back side of each device chip, and isolating each device chip from the wafer.

Abstract: A wafer processing method of processing a wafer with a plurality of devices disposed in areas demarcated by projected division lines and formed on a face side thereof includes a protective member placing step of placing a protective member for protecting the face side of the wafer on the face side of the wafer which is divided into individual device chips, a resin laying step of laying a die-bonding resin on the reverse sides of the individual device chips by applying a die-bonding liquid resin on the reverse side of the wafer and hardening the applied die-bonding liquid resin, and a separation step of separating the device chips with the die-bonding liquid resin laid on the reverse sides thereof from the wafer.

Abstract: A wafer is divided into device chips each of which is surrounded by a mold resin. The wafer has a plurality of devices arranged like a matrix with a spacing having a predetermined width, the front side of each device being covered with the mold resin, the spacing being filled with the mold resin to form a street between any adjacent ones of the devices. The wafer processing method includes a division start point forming step of forming a division start point along each street at the lateral center of the mold resin filling the spacing and a dividing step of applying an external force to the wafer after performing the division start point forming step, thereby laterally dividing each street into two parts at the division start point to obtain the device chips divided from each other, each device chip being surrounded by the mold resin.

Abstract: A wafer processing method of processing a wafer with a plurality of devices disposed in areas demarcated by projected division lines and formed on a face side thereof includes a protective member placing step of placing a protective member for protecting the face side of the wafer on the face side of the wafer which is divided into individual device chips, a resin laying step of laying a die-bonding resin on the reverse sides of the individual device chips by applying a die-bonding liquid resin on the reverse side of the wafer and hardening the applied die-bonding liquid resin, and a separation step of separating the device chips with the die-bonding liquid resin laid on the reverse sides thereof from the wafer.

Abstract: A wafer processing method includes a first grinding step and a second grinding step. In the first grinding step, first grinding abrasives are moved in a processing feed direction that is a direction orthogonal to a holding surface of a chuck table of grinding apparatus and a wafer is ground to form a first circular recess in the back surface of the wafer. In the second grinding step, second grinding abrasives formed of finer abrasive grains than the first grinding abrasives are moved down in an oblique direction from the center side of the wafer toward the periphery of the wafer and the first circular recess is ground.

Abstract: In a method for processing a plate object, etching is performed for a flat plate object by a predetermined etching method and the shape of the plate object after the etching is grasped in advance. In a grinding step, the plate object is ground into a grinding-finished shape that is a non-flat shape obtained by inverting the shape of the plate object after the etching to the reverse shape. When subsequent etching by the predetermined etching method is performed for a grinding-target surface, the plate object is formed into a flat shape with a uniform thickness.

Abstract: In a method for processing a plate object, etching is performed for a flat plate object by a predetermined etching method and the shape of the plate object after the etching is grasped in advance. In a grinding step, the plate object is ground into a grinding-finished shape that is a non-flat shape obtained by inverting the shape of the plate object after the etching to the reverse shape. When subsequent etching by the predetermined etching method is performed for a grinding-target surface, the plate object is formed into a flat shape with a uniform thickness.