Abstract: An imaging device includes pixels each including a photoelectric converter generating charges, a holding portion holding charges transferred from the photoelectric converter, and an amplifier unit outputting a signal based on charges transferred from the holding portion. Each pixel outputs, to an output line, a signal based on charges generated by the photoelectric converter during an exposure period including a first period during which the photoelectric converter holds charges generated in the first period and a second period during which the photoelectric converter or the holding portion holds charges generated in the second period while the holding portion is holding charges generated in the first period, and resets the holding portion after outputting a signal based on charges held in the holding portion in the first period and before transferring charges generated in the first period from the photoelectric converter to the holding portion.

Abstract: An imaging device includes pixels each including a photoelectric converter generating charges, a holding portion holding charges transferred from the photoelectric converter, and an amplifier unit outputting a signal based on charges transferred from the holding portion. Each pixel outputs, to an output line, a signal based on charges generated by the photoelectric converter during an exposure period including a first period during which the photoelectric converter holds charges generated in the first period and a second period during which the photoelectric converter or the holding portion holds charges generated in the second period while the holding portion is holding charges generated in the first period, and resets the holding portion after outputting a signal based on charges held in the holding portion in the first period and before transferring charges generated in the first period from the photoelectric converter to the holding portion.

Abstract: An aspect of the present disclosure is directed to an imaging apparatus capable of reducing fluctuation in voltage in a current supply line due to fluctuation in a current consumption amount generated when an output circuit shifts from a first state to a second state, and a method for driving the imaging apparatus.

Abstract: A semiconductor device for a liquid discharge head is provided. The device includes first transistors configured to receive a first voltage at a first terminal and second transistors configured to receive a second voltage at a first terminal. The device further includes discharge elements configured to discharge a liquid. Each discharge element is connected between a second terminal of a first transistor and a second terminal of a second transistor. A first control circuit is configured to supply a first control signal for controlling a conductive state of the first transistors via a common signal. A stabilization circuit is configured to stabilize a voltage of at least one of the second terminal of the first transistor or the control terminal of the first transistor.

Abstract: A photoelectric converting apparatus has first and third semiconductor layers of a first conductivity type which respectively output signals obtained by photoelectric conversion, and second and fourth semiconductor layers of a second conductivity type supplied with potentials from a potential supplying unit. In the photoelectric converting apparatus, the first, second, third and fourth semiconductor layers are arranged in sequence, the second and fourth semiconductor layers are electrically separated from each other, and the potential to be supplied to the second semiconductor layer and the potential to be supplied to the fourth semiconductor layer are controlled independently from each other.

Abstract: A semiconductor device for a liquid discharge head is provided. The device includes first transistors configured to receive a first voltage at a first terminal and second transistors configured to receive a second voltage at a first terminal. The device further includes discharge elements configured to discharge a liquid. Each discharge element is connected between a second terminal of a first transistor and a second terminal of a second transistor. A first control circuit is configured to supply a first control signal for controlling a conductive state of the first transistors via a common signal. A stabilization circuit is configured to stabilize a voltage of at least one of the second terminal of the first transistor or the control terminal of the first transistor.

Abstract: A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.

Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.

Abstract: In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.

Abstract: This invention provides an image pickup device comprising a plurality of pixels each including a photoelectric conversion unit, a semiconductor area to which a signal from the photoelectric conversion unit is transferred, a transfer switch for transferring the signal from the photoelectric conversion unit to the semiconductor area, and a read unit for reading out the signal from the semiconductor area, and a drive circuit for outputting a first level at which the transfer switch is set in an OFF state, a second level at which the transfer switch is set in an ON state, and a third level between the first level and the second level, wherein the drive circuit controls to hold the third level for a predetermined time while the transfer switch is changing from the ON state to the OFF state.

Abstract: A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance.

Abstract: There is provided a photoelectric conversion apparatus which is characterized by comprising a plurality of photoelectric conversion regions of a first conductivity type, and a plurality of semiconductor regions of a second conductivity type opposite to the first conductivity type; and in that the plurality of photoelectric conversion regions of the first conductivity type and the plurality of semiconductor regions are alternately arranged, and a voltage controlling unit is further provided to change a width of a depletion layer formed in a semiconductor substrate by controlling a voltage to be applied to the semiconductor region of the second conductivity type provided between the plurality of photoelectric conversion regions of the first conductivity type.

Abstract: A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.

Abstract: An aspect of the present disclosure is directed to an imaging apparatus capable of reducing fluctuation in voltage in a current supply line due to fluctuation in a current consumption amount generated when an output circuit shifts from a first state to a second state, and a method for driving the imaging apparatus.

Abstract: A readout circuit includes: an amplifier (408); and offset controllers (415 and 416) configured to set an output offset voltage of the amplifier, wherein the readout circuit operates in first and second modes, in the first mode, a first voltage, and thereafter a second voltage lower than the first voltage, are input into the amplifier, in the second mode, a third voltage, and thereafter a fourth voltage higher than the third voltage, are input into the amplifier, and the offset controller switches the output offset voltage of the amplifier, between the first and second modes.

Abstract: A driving method of a solid-state imaging apparatus including multiple reference level supplying units each arranged correspondingly to a predetermined number of signal holding units, to supply a reference level to an output node of the signal holding unit through the selecting unit, wherein the method includes steps of: performing a clamping operation for sampling and holding the signal in the signal holding unit, by terminating turn ON pulses to be supplied to the selecting units successively in separate timings, one for each one of the selecting units, or one for each group of the selecting units while the reference level is supplied from the reference level supplying unit to the output node; and performing an operation of selecting the signal holding units through the selecting units, by supplying the turn ON pulses successively to the selecting units, to read out the signals successively from the signal holding units selected.

Abstract: In a semiconductor device including unit cells which are aligned in one direction, wirings disposed along end portions in the one direction have high Young's moduli.

Abstract: An image sensing apparatus is provided, which is provided with a plurality of image sensing elements each including a plurality of photoelectric conversion sections and an adding circuit adapted to add signals from the plurality of photoelectric conversion sections to obtain a one-pixel signal, wherein the adding circuit adds the signals such that the one-pixel signals obtained by the addition are arranged at equal intervals in an area extending over the plurality of image sensing elements.

Abstract: To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.

Abstract: A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.