Patents by Inventor Tetsuo Fujii

Tetsuo Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8106471
    Abstract: A semiconductor dynamic quantity sensor includes a sensor part and a cap connected to the sensor part. Dynamic quantity is detected based on a capacitance of a capacitor defined between a movable electrode and a fixed electrode of the sensor part. A float portion of the sensor part is separated from a support board of the sensor part to define a predetermined interval. At least one of the cap and the support board has a displacing portion displacing the float portion in a direction perpendicular to the support board so as to change the predetermined interval. The movable electrode has a displacement in accordance with the displaced float portion.
    Type: Grant
    Filed: October 15, 2009
    Date of Patent: January 31, 2012
    Assignee: DENSO CORPORATION
    Inventors: Hisanori Yokura, Tetsuo Fujii
  • Patent number: 8098000
    Abstract: An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.
    Type: Grant
    Filed: August 21, 2008
    Date of Patent: January 17, 2012
    Assignee: DENSO CORPORATION
    Inventors: Yasuyuki Okuda, Makiko Sugiura, Kenji Fukumura, Takahiko Yoshida, Tetsuo Fujii
  • Patent number: 8089144
    Abstract: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: January 3, 2012
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Akitoshi Yamanaka, Hisanori Yokura
  • Publication number: 20110268593
    Abstract: An electric device includes: a circuit board arranged in cooling medium in a housing and having an electric element and an external coupling electrode, wherein the electric element is sealed in and mounted in a substrate, and the electric element is electrically coupled with the external coupling electrode; an external coupling terminal electrically coupled with the external coupling electrode; and a separation member for separating the external coupling terminal and a connection portion between the external coupling electrode and the external coupling terminal away from the cooling medium.
    Type: Application
    Filed: March 11, 2011
    Publication date: November 3, 2011
    Applicant: DENSO CORPORATION
    Inventors: Masao YAMADA, Satoshi YOSHIMURA, Tetsuo FUJII
  • Publication number: 20110266666
    Abstract: A circuit board includes an insulating member and a semiconductor chip encapsulated with the thermoplastic resin portion of the insulating member. A wiring member is located in the insulating member and electrically connected to first and second electrodes on respective sides of the semiconductor chip. The wiring member includes a pad, an interlayer connection member, and a connection portion. A diffusion layer is located between the first electrode and the connection portion between the pad and the connection portion, and between the second electrode and the interlayer connection member. At least one element of the interlayer connection member has a melting point lower than a glass-transition point of the thermoplastic resin portion. The connection portion is made of material having a melting point higher than a melting point of the thermoplastic resin portion.
    Type: Application
    Filed: March 31, 2011
    Publication date: November 3, 2011
    Applicant: DENSO CORPORATION
    Inventors: Yukihiro Maeda, Kouji Kondoh, Yoshiharu Harada, Takeshi Yamauchi, Tetsuo Fujii
  • Publication number: 20110248363
    Abstract: A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.
    Type: Application
    Filed: April 11, 2011
    Publication date: October 13, 2011
    Applicant: DENSO CORPORATION
    Inventors: Tetsuo FUJII, Minekazu Sakai, Takumi Shibata
  • Patent number: 8035154
    Abstract: A semiconductor device includes a semiconductor substrate, a plurality of memory cells, a plurality of bit lines, and a plurality of source lines. The memory cells are located in the semiconductor substrate. Each of the memory cells includes a trench provided in the semiconductor substrate, an oxide layer disposed on a sidewall of the trench, a tunnel oxide layer disposed at a bottom portion of the trench, a floating gate disposed in the trench so as to be surrounded by the oxide layer and the tunnel oxide layer, and an erasing electrode disposed on an opposing side of the tunnel oxide layer from the floating gate. The bit lines and the source lines are alternately arranged on the memory cells in parallel with each other.
    Type: Grant
    Filed: November 4, 2008
    Date of Patent: October 11, 2011
    Assignee: DENSO CORPORATION
    Inventors: Takayoshi Naruse, Mitsutaka Katada, Tetsuo Fujii
  • Patent number: 8026572
    Abstract: A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: September 27, 2011
    Assignee: DENSO CORPORATION
    Inventors: Yoshihiko Ozeki, Kenji Kouno, Tetsuo Fujii
  • Publication number: 20110227174
    Abstract: In a semiconductor physical quantity sensor, a pattern portion including a wiring pattern as a wiring is formed on a surface of a first semiconductor substrate. A support substrate having a surface made of an electrically insulating material is prepared. The first semiconductor substrate is joined to the support substrate by bonding the pattern portion to the surface of the support substrate. Further, a sensor structure is formed in the first semiconductor substrate. The sensor structure is electrically connected to the wiring pattern. A cap is bonded to the first semiconductor substrate such that the sensor structure is hermetically sealed.
    Type: Application
    Filed: February 24, 2011
    Publication date: September 22, 2011
    Applicant: DENSO CORPORATION
    Inventors: Tetsuo FUJII, Keisuke Gotoh
  • Patent number: 8022477
    Abstract: A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.
    Type: Grant
    Filed: February 21, 2008
    Date of Patent: September 20, 2011
    Assignee: DENSO CORPORATION
    Inventors: Nozomu Akagi, Shigeki Takahashi, Takashi Nakano, Yasushi Higuchi, Tetsuo Fujii, Yoshiyuki Hattori, Makoto Kuwahara
  • Patent number: 7968432
    Abstract: A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: June 28, 2011
    Assignee: DENSO CORPORATION
    Inventors: Muneo Tamura, Tetsuo Fujii
  • Patent number: 7968958
    Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: June 28, 2011
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Kazuhiko Sugiura
  • Publication number: 20110147859
    Abstract: A semiconductor device includes a base substrate made of silicon, a cap substrate and a leading electrode having a metal part. The base substrate has base semiconductor regions being insulated and separated from each other at a predetermined portion of a surface layer thereof. The cap substrate is bonded to the predetermined portion of the surface layer of the base substrate. The leading electrode has a first end connected to one of the plurality of base semiconductor regions of the base substrate and extends through the cap substrate such that a second end of the leading electrode is located adjacent to a surface of the cap substrate for allowing an electrical connection with an external part, the surface being opposite to a bonding surface at which the base substrate and the cap substrate are bonded. The leading electrode defines a groove between an outer surface thereof and the cap substrate.
    Type: Application
    Filed: December 15, 2010
    Publication date: June 23, 2011
    Applicant: DENSO CORPORATION
    Inventors: Masaya TANAKA, Tetsuo Fujii
  • Publication number: 20110147863
    Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.
    Type: Application
    Filed: February 28, 2011
    Publication date: June 23, 2011
    Applicant: DENSO CORPORATION
    Inventors: Tetsuo FUJII, Kazuhiko Sugiura
  • Publication number: 20110133295
    Abstract: A region divided substrate includes a substrate, a plurality of trenches, a conductive layer, and an insulating member. The substrate has a first surface and a second surface opposed to each other. The trenches penetrate the substrate from the first surface to the second surface and divide the substrate into a plurality of partial regions. The conductive layer is disposed on a sidewall of each of the trenches from a portion adjacent to the first surface to a portion adjacent to the second surface. The conductive layer has an electric conductivity higher than an electric conductivity of the substrate. The insulating member fills each of the trenches through the conductive layer.
    Type: Application
    Filed: October 12, 2010
    Publication date: June 9, 2011
    Applicant: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Masaya Tanaka, Keisuke Gotoh
  • Patent number: 7950288
    Abstract: A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: May 31, 2011
    Assignee: Denso Corporation
    Inventors: Tetsuo Fujii, Eishi Kawasaki
  • Publication number: 20110094303
    Abstract: A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.
    Type: Application
    Filed: December 21, 2010
    Publication date: April 28, 2011
    Applicant: DENSO CORPORATION
    Inventors: Tameharu Ohta, Tetsuo Fujii, Masanobu Azukawa, Takeshi Ito, Itaru Ishii
  • Patent number: 7911023
    Abstract: A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.
    Type: Grant
    Filed: November 4, 2008
    Date of Patent: March 22, 2011
    Assignee: Denso Corporation
    Inventors: Nozomu Akagi, Hitoshi Yamaguchi, Tetsuo Fujii
  • Patent number: 7901967
    Abstract: A method for dicing a semiconductor substrate includes: forming a reforming layer in the substrate by irradiating a laser beam on the substrate; forming a groove on the substrate along with a cutting line; and applying a force to the substrate in order to cutting the substrate at the reforming layer as a starting point of cutting. The groove has a predetermined depth so that the groove is disposed near the reforming layer, and the force provides a stress at the groove.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: March 8, 2011
    Assignee: DENSO CORPORATION
    Inventors: Atsushi Komura, Muneo Tamura, Kazuhiko Sugiura, Hirotsugu Funato, Yumi Maruyama, Tetsuo Fujii, Kenji Kohno
  • Publication number: 20110042741
    Abstract: A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.
    Type: Application
    Filed: August 17, 2010
    Publication date: February 24, 2011
    Applicant: DENSO CORPORATION
    Inventors: Daisuke Fukuoka, Takanori Teshima, Kuniaki Mamitsu, Ken Sakamoto, Manabu Tomisaka, Tetsuo Fujii, Akira Tai, Kazuo Akamatsu, Masayoshi Nishihata