Patents by Inventor Tetsuro Yamada

Tetsuro Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10877216
    Abstract: An optical waveguide substrate includes a substrate that includes a recess, a buffer layer disposed on a bottom surface and a wall surface of the recess, and an optical waveguide disposed inside the recess with the buffer layer interposed therebetween and having a cladding layer disposed on the buffer layer and a core layer disposed inside the cladding layer.
    Type: Grant
    Filed: April 9, 2019
    Date of Patent: December 29, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Kohei Choraku, Akiko Matsui, Yoshiyuki Hiroshima, Kazuki Takahashi, Tetsuro Yamada
  • Publication number: 20200341042
    Abstract: A specific conductivity measurement method includes: performing first measurement to obtain a resonance frequency f1 that is outputted to a measuring device when the first and second dielectric flat plates each have a thickness t1, and an unloaded Qu1 that corresponds to the resonance frequency f1; performing second measurement to obtain a resonance frequency f2 that is outputted to the measuring device when the first and second dielectric flat plates each have a thickness t2 that is different from the thickness t1, and an unloaded Qu2 that corresponds to the resonance frequency f2; and calculating a specific conductivity ?r of the copper foil and the first and second conductor flat plates based on an arithmetic equation that includes the resonance frequency the unloaded Qu1, the resonance frequency f2, and the unloaded Qu2.
    Type: Application
    Filed: April 16, 2020
    Publication date: October 29, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Kazuki TAKAHASHI, AKIKO MATSUI, Kohei Choraku, Mitsunori Abe, Tetsuro Yamada, Yoshio Kobayashi, Sotaro Kobayashi
  • Publication number: 20200329551
    Abstract: A heat sink fixing member includes a frame that is provided above a board of a unit and surrounds a first electronic component and a first heat sink; and a blade in which both end parts are connected to the frame, a portion between the both end parts is erected in a gap in a first fin group, and a side closer to the board in the portion abuts on a first base plate, wherein the unit includes: the board; the first electronic component mounted on the board; and the first heat sink that is provided on the first electronic component, and has the first base plate and the first fin group that protrudes from the first base plate.
    Type: Application
    Filed: April 1, 2020
    Publication date: October 15, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Tsuyoshi Yamamoto, Masumi SUZUKI, Tetsuro Yamada, Yasushi Masuda, JIE WEI
  • Publication number: 20200303849
    Abstract: An electronic component includes: a first terminal that is inserted into a first through hole in a substrate; and a second terminal that is inserted into a second through hole in the substrate, wherein a length of the first terminal from a first end that is inserted into the first through hole to a second end is longer than a length of the second terminal from a third end that is inserted into the second through hole to a fourth end, and a cross sectional area of a portion of the first terminal positioned on a side of the second end with respect to a first joined portion is larger than a cross sectional area of a portion of the second terminal positioned on a side of the fourth end with respect to a second joined portion.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Takahide Mukoyama, Tetsuro Yamada, Mitsuhiko Sugane, YOSHIYUKI HIROSHIMA, Kohei Choraku, Kazuki TAKAHASHI, AKIKO MATSUI, Shigeo Iriguchi
  • Patent number: 10770717
    Abstract: A composition for a secondary battery negative electrode including a carbonaceous material (a) and a silicon oxide structure (b), wherein the silicon oxide structure (b) includes a silicon oxide framework containing Si and O in its atomic composition and silicon-based nanoparticles that are chemically bonded to the silicon oxide framework as components, wherein the silicon oxide structure (b) is contained in a proportion of 15 mass % or more with respect to a total amount of the carbonaceous material (a) and the silicon oxide structure (b), and wherein the silicon oxide structure (b) satisfies the following conditions (i) to (iii): (i) having an atomic composition represented by a general formula SiOx2Hy2 (0.3<x2<1.5, 0.01<y2<0.35), (ii) having Si—H bonds, and (iii) being essentially free of carbon.
    Type: Grant
    Filed: December 26, 2018
    Date of Patent: September 8, 2020
    Assignees: JNC CORPORATION, JNC PETROCHEMICAL CORPORATION
    Inventors: Soichiro Sato, Yoshihito Takano, Hirotsuna Yamada, Keiichiro Kanao, Miwako Nishimura, Tetsuro Kizaki
  • Publication number: 20200270285
    Abstract: To provide an organic silicon compound having an average structural formula (1). (Z represents a 2 to 20-valent group containing an organosiloxane structure, each R1 independently represents an alkyl group or an aryl group, each R2 independently represents an alkyl group or an aryl group, each R3 independently represents a hydrogen atom, an alkyl group, an alkoxy group, or an O. (oxy radical), each R4 independently represents a hydrogen atom or an alkyl group, each A1 independently represents a single bond or an alkylene group free of a hetero atom, each A2 independently represents a single bond or a divalent linking group containing a hetero atom, m is a number of 1 to 3, p is a number of 1 to 10, q is a number of 1 to 10, and p+q represents a number satisfying from 2 to 20 corresponding to the valency number of Z.
    Type: Application
    Filed: February 6, 2020
    Publication date: August 27, 2020
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tetsuro YAMADA, Munenao HIROKAMI
  • Patent number: 10714849
    Abstract: An electronic component includes: a first terminal that is inserted into a first through hole in a substrate; and a second terminal that is inserted into a second through hole in the substrate, wherein a length of the first terminal from a first end that is inserted into the first through hole to a second end is longer than a length of the second terminal from a third end that is inserted into the second through hole to a fourth end, and a cross sectional area of a portion of the first terminal positioned on a side of the second end with respect to a first joined portion is larger than a cross sectional area of a portion of the second terminal positioned on a side of the fourth end with respect to a second joined portion.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: July 14, 2020
    Assignee: FUJITSU LIMITED
    Inventors: Takahide Mukoyama, Tetsuro Yamada, Mitsuhiko Sugane, Yoshiyuki Hiroshima, Kohei Choraku, Kazuki Takahashi, Akiko Matsui, Shigeo Iriguchi
  • Patent number: 10655007
    Abstract: Disclosed are: a polyalkylene terephthalate resin composition comprising (A) a polyalkylene terephthalate resin and (B) an acrylic-based core-shell polymer which has an average particle size of 2 ?m or greater and in which an amount of the core layer component is more than 80% by mass but less than 100% by mass relative to a total mass of the core layer component and a shell layer component; and a molded article which is obtained by molding the polyalkylene terephthalate resin composition.
    Type: Grant
    Filed: December 14, 2015
    Date of Patent: May 19, 2020
    Assignees: POLYPLASTICS CO., LTD., KANEKA CORPORATION
    Inventors: Kouichi Sakata, Shinya Yamada, Nobuhiro Yamamoto, Tetsuro Yamamoto, Yoshiaki Matsuoka, Toyohisa Fujimoto
  • Publication number: 20200150365
    Abstract: An optical module includes: a substrate in which a conductor is disposed in an inner layer and a part of the conductor is exposed at an end surface; and an optical element bonded to the part of the conductor exposed at the end surface of the substrate.
    Type: Application
    Filed: November 8, 2019
    Publication date: May 14, 2020
    Applicant: FUJITSU LIMITED
    Inventors: Tetsuro Yamada, Yasushi Masuda, NAOKI ISHIKAWA, Shuichi Takeuchi
  • Publication number: 20200056075
    Abstract: Provided are: a removable radiation-curable silicone composition which has excellent radiation curability and gives cured objects having excellent adhesiveness to the substrates; and a release sheet. The removable radiation-curable silicone composition comprises the following components (A), (B), (C), and (D): (A) 100 parts by mass of an organopolysiloxane having an alkenyl group; (B) 1-30 parts by mass of an organopolysiloxane having a mercaptoalkyl group; (C) 0.1-5 parts by mass of a compound having a plurality of acryl groups in the molecule; and (D) 0.1-15 parts by mass of a radical polymerization initiator.
    Type: Application
    Filed: April 3, 2018
    Publication date: February 20, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Kenji TANAKA, Shunji AOKI, Munenao HIROKAMI, Tetsuro YAMADA
  • Publication number: 20200032103
    Abstract: The present invention pertains to a room-temperature-curable organopolysiloxane composition containing (A) an organopolysiloxane having the hydrolyzable silyl-group-containing monovalent organic group represented by formula (1) (R1 represents a substituted or unsubstituted C1-10 alkyl group or a substituted or unsubstituted C6-10 aryl group, R2 represents a substituted or unsubstituted C1-10 alkyl group or a substituted or unsubstituted C6-10 aryl group, and R3 represents a substituted or unsubstituted C1-20 alkyl group or a hydrogen atom; M is an integer from 1 to 3, and n is an integer of 2 or more; and the broken line represents atomic bonding), (B) a hydrolyzable organosilane compound and/or a partially hydrolyzed condensate thereof, (C) a curing catalyst, and (F) a bleed oil.
    Type: Application
    Filed: March 20, 2018
    Publication date: January 30, 2020
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Akitsugu FUJIWARA, Tetsuro YAMADA, Munenao HIROKAMI
  • Publication number: 20190375769
    Abstract: Provided is an organosilicon compound characterized by containing at least one group represented by structural formula (1) in one molecule and having a main chain comprising a silicon-containing organic group. This organosilicon compound exhibits satisfactorily fast curability, and excellent yellowing resistance, heat resistance, storage stability, and safety. (In the formula, each R1 independently represents an unsubstituted or substituted C1-10 alkyl group, or an unsubstituted or substituted C6-10 aryl group, each R2 independently represents an unsubstituted or substituted C1-10 alkyl group, or an unsubstituted or substituted C6-10 aryl group, and each R3 independently represents a hydrogen atom or an unsubstituted or substituted C1-10 alkyl group. m is a number from 1-3, and n is an integer of 2 or greater. A dashed line represents a bond.
    Type: Application
    Filed: May 16, 2017
    Publication date: December 12, 2019
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tetsuro YAMADA, Munenao HIROKAMI, Taiki KATAYAMA
  • Publication number: 20190363353
    Abstract: A silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product-metal oxide complex comprising a silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product and a metal oxide, wherein the silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product contains 5 wt % to 95 wt % of silicon nanoparticles having a volume-based mean particle size of more than 10 nm but less than 500 nm, and a hydrogen polysilsesquioxane-derived silicon oxide structure that coats the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles. The silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product is represented by the general formula SiOxHy (0.01<x<1.35, 0<y<0.35) and has Si—H bonds. The metal oxide consists of one or more metals selected from titanium, zinc, zirconium, aluminum, and iron.
    Type: Application
    Filed: January 10, 2018
    Publication date: November 28, 2019
    Applicants: JNC CORPORATION, JNC PETROCHEMICAL CORPORATION
    Inventors: Hirotsuna YAMADA, Yoshihito TAKANO, Tetsuro KIZAKI, Masakazu KONDO
  • Publication number: 20190363352
    Abstract: Provided is a silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product that is represented by the general formula SiOxHy (0.01<x?0.3, 0<y<0.35) and has Si—H bonds, said silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product being characterized by (A) including more than 65.0 wt % of silicon nanoparticles that have a volume-based average particle size of 10-500 nm, exclusive, and that do not include particles having a particle size of 1000 nm or larger, and (B) including a silicon oxide structure derived from hydrogen polysilsesquioxane that coats the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles.
    Type: Application
    Filed: January 10, 2018
    Publication date: November 28, 2019
    Applicants: JNC CORPORATION, JNC PETROCHEMICAL CORPORATION
    Inventors: Yoshihito TAKANO, Tetsuro KIZAKI, Hirotsuna YAMADA, Masakazu KONDO, Akira Takahashi
  • Publication number: 20190363354
    Abstract: Polysilsesquioxane covering silicon nanoparticles, or a calcined product thereof, comprising silicon nanoparticles, which have a volume-basis mean particle size of 10-500 nm, exclusive, and do not include particles having a particle size of 1000 nm or larger, and polysilsesquioxane, which covers the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles, said polysilsesquioxane covering silicon nanoparticles or the calcined product thereof having Si—H bonds. When observed using a transmission electron microscope (TEM), the thickness of the polysilsesquioxane is 1-30 nm, inclusive.
    Type: Application
    Filed: January 10, 2018
    Publication date: November 28, 2019
    Applicants: JNC CORPORATION, JNC PETROCHEMICAL CORPORATION
    Inventors: Yoshihito TAKANO, Tetsuro KIZAKI, Hirotsuna YAMADA, Masakazu KONDO, Akira TAKAHASHI
  • Patent number: 10492291
    Abstract: A wiring board manufacturing method includes forming a conductor pattern within a waste board section of a wiring board including a product section and the waste board section, the conductor pattern in which a plurality of polygonal lands made of a conductor are arranged along a first direction and a second direction crossing the first direction, each of the plurality of polygonal lands making contact with an adjacent one of the plurality of polygonal lands at each apex of the plurality of polygonal lands; and selectively removing the conductor at the apex of at least part of the plurality of polygonal lands.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: November 26, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Yoshiyuki Hiroshima, Akiko Matsui, Mitsuhiko Sugane, Takahide Mukoyama, Tetsuro Yamada, Kohei Choraku
  • Publication number: 20190355323
    Abstract: A display unit includes a display panel that includes a plurality of pixels arranged in a matrix. Each of the pixels includes one of an optical modulator and a self-luminescent element, and one of an electrochromic element, an electrophoretic element, and an electrowetting element. Each of the pixels further includes a pixel circuit that is configured to selectively drive the one of the optical modulator and the self-luminescent element, and selectively drive the one of the electrochromic element, the electrophoretic element, and the electrowetting element.
    Type: Application
    Filed: February 5, 2019
    Publication date: November 21, 2019
    Inventors: Jiro YAMADA, Tetsuro YAMAMOTO
  • Patent number: 10479880
    Abstract: Provided are a rubber composition for tires which achieves both abrasion resistance and processability while maintaining fuel economy, and a pneumatic tire including the rubber composition. A rubber composition for tires, containing an organosilicon compound represented by the average compositional formula (I) below having a ratio of the number of sulfur atoms to the number of silicon atoms of 1.0 to 1.5, wherein x represents the average number of sulfur atoms; m represents an integer of 6 to 12; and R1 to R6 are the same or different and each represent a C1-C6 alkyl or alkoxy group, at least one of R1 to R3 and at least one of R4 to R6 are the alkoxy groups, and two or more of the alkyl or alkoxy groups for R1 to R6 may be joined to form a ring.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: November 19, 2019
    Assignees: SUMITOMO RUBBER INDUSTRIES, LTD., SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Ryuichi Tokimune, Tsuyoshi Tsuchida, Ryota Kitago, Soh Ishino, Hiroyuki Kishimoto, Munenao Hirokami, Tetsuro Yamada
  • Publication number: 20190324207
    Abstract: An optical waveguide substrate includes a substrate that includes a recess, a buffer layer disposed on a bottom surface and a wall surface of the recess, and an optical waveguide disposed inside the recess with the buffer layer interposed therebetween and having a cladding layer disposed on the buffer layer and a core layer disposed inside the cladding layer.
    Type: Application
    Filed: April 9, 2019
    Publication date: October 24, 2019
    Applicant: FUJITSU LIMITED
    Inventors: Kohei Choraku, AKIKO MATSUI, YOSHIYUKI HIROSHIMA, Kazuki TAKAHASHI, Tetsuro Yamada
  • Patent number: 10431656
    Abstract: A semiconductor crystal substrate includes a first buffer layer formed of a nitride semiconductor over a substrate, a second buffer layer formed of a nitride semiconductor on the first buffer layer, a first semiconductor layer formed of a nitride semiconductor on or over the second buffer layer, and a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer. The Fe concentration of the first buffer layer is higher than the C concentration of the first buffer layer. The C concentration of the second buffer layer is higher than the Fe concentration of the second buffer layer.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: October 1, 2019
    Assignee: FUJITSU LIMITED
    Inventors: Tetsuro Ishiguro, Atsushi Yamada, Junji Kotani, Norikazu Nakamura