Abstract: An optical waveguide substrate includes a substrate that includes a recess, a buffer layer disposed on a bottom surface and a wall surface of the recess, and an optical waveguide disposed inside the recess with the buffer layer interposed therebetween and having a cladding layer disposed on the buffer layer and a core layer disposed inside the cladding layer.

Abstract: A specific conductivity measurement method includes: performing first measurement to obtain a resonance frequency f1 that is outputted to a measuring device when the first and second dielectric flat plates each have a thickness t1, and an unloaded Qu1 that corresponds to the resonance frequency f1; performing second measurement to obtain a resonance frequency f2 that is outputted to the measuring device when the first and second dielectric flat plates each have a thickness t2 that is different from the thickness t1, and an unloaded Qu2 that corresponds to the resonance frequency f2; and calculating a specific conductivity ?r of the copper foil and the first and second conductor flat plates based on an arithmetic equation that includes the resonance frequency the unloaded Qu1, the resonance frequency f2, and the unloaded Qu2.

Abstract: A heat sink fixing member includes a frame that is provided above a board of a unit and surrounds a first electronic component and a first heat sink; and a blade in which both end parts are connected to the frame, a portion between the both end parts is erected in a gap in a first fin group, and a side closer to the board in the portion abuts on a first base plate, wherein the unit includes: the board; the first electronic component mounted on the board; and the first heat sink that is provided on the first electronic component, and has the first base plate and the first fin group that protrudes from the first base plate.

Abstract: An electronic component includes: a first terminal that is inserted into a first through hole in a substrate; and a second terminal that is inserted into a second through hole in the substrate, wherein a length of the first terminal from a first end that is inserted into the first through hole to a second end is longer than a length of the second terminal from a third end that is inserted into the second through hole to a fourth end, and a cross sectional area of a portion of the first terminal positioned on a side of the second end with respect to a first joined portion is larger than a cross sectional area of a portion of the second terminal positioned on a side of the fourth end with respect to a second joined portion.

Abstract: A composition for a secondary battery negative electrode including a carbonaceous material (a) and a silicon oxide structure (b), wherein the silicon oxide structure (b) includes a silicon oxide framework containing Si and O in its atomic composition and silicon-based nanoparticles that are chemically bonded to the silicon oxide framework as components, wherein the silicon oxide structure (b) is contained in a proportion of 15 mass % or more with respect to a total amount of the carbonaceous material (a) and the silicon oxide structure (b), and wherein the silicon oxide structure (b) satisfies the following conditions (i) to (iii): (i) having an atomic composition represented by a general formula SiOx2Hy2 (0.3<x2<1.5, 0.01<y2<0.35), (ii) having Si—H bonds, and (iii) being essentially free of carbon.

Abstract: To provide an organic silicon compound having an average structural formula (1). (Z represents a 2 to 20-valent group containing an organosiloxane structure, each R1 independently represents an alkyl group or an aryl group, each R2 independently represents an alkyl group or an aryl group, each R3 independently represents a hydrogen atom, an alkyl group, an alkoxy group, or an O. (oxy radical), each R4 independently represents a hydrogen atom or an alkyl group, each A1 independently represents a single bond or an alkylene group free of a hetero atom, each A2 independently represents a single bond or a divalent linking group containing a hetero atom, m is a number of 1 to 3, p is a number of 1 to 10, q is a number of 1 to 10, and p+q represents a number satisfying from 2 to 20 corresponding to the valency number of Z.

Abstract: An electronic component includes: a first terminal that is inserted into a first through hole in a substrate; and a second terminal that is inserted into a second through hole in the substrate, wherein a length of the first terminal from a first end that is inserted into the first through hole to a second end is longer than a length of the second terminal from a third end that is inserted into the second through hole to a fourth end, and a cross sectional area of a portion of the first terminal positioned on a side of the second end with respect to a first joined portion is larger than a cross sectional area of a portion of the second terminal positioned on a side of the fourth end with respect to a second joined portion.

Abstract: Disclosed are: a polyalkylene terephthalate resin composition comprising (A) a polyalkylene terephthalate resin and (B) an acrylic-based core-shell polymer which has an average particle size of 2 ?m or greater and in which an amount of the core layer component is more than 80% by mass but less than 100% by mass relative to a total mass of the core layer component and a shell layer component; and a molded article which is obtained by molding the polyalkylene terephthalate resin composition.

Abstract: An optical module includes: a substrate in which a conductor is disposed in an inner layer and a part of the conductor is exposed at an end surface; and an optical element bonded to the part of the conductor exposed at the end surface of the substrate.

Abstract: Provided are: a removable radiation-curable silicone composition which has excellent radiation curability and gives cured objects having excellent adhesiveness to the substrates; and a release sheet. The removable radiation-curable silicone composition comprises the following components (A), (B), (C), and (D): (A) 100 parts by mass of an organopolysiloxane having an alkenyl group; (B) 1-30 parts by mass of an organopolysiloxane having a mercaptoalkyl group; (C) 0.1-5 parts by mass of a compound having a plurality of acryl groups in the molecule; and (D) 0.1-15 parts by mass of a radical polymerization initiator.

Abstract: The present invention pertains to a room-temperature-curable organopolysiloxane composition containing (A) an organopolysiloxane having the hydrolyzable silyl-group-containing monovalent organic group represented by formula (1) (R1 represents a substituted or unsubstituted C1-10 alkyl group or a substituted or unsubstituted C6-10 aryl group, R2 represents a substituted or unsubstituted C1-10 alkyl group or a substituted or unsubstituted C6-10 aryl group, and R3 represents a substituted or unsubstituted C1-20 alkyl group or a hydrogen atom; M is an integer from 1 to 3, and n is an integer of 2 or more; and the broken line represents atomic bonding), (B) a hydrolyzable organosilane compound and/or a partially hydrolyzed condensate thereof, (C) a curing catalyst, and (F) a bleed oil.

Abstract: Provided is an organosilicon compound characterized by containing at least one group represented by structural formula (1) in one molecule and having a main chain comprising a silicon-containing organic group. This organosilicon compound exhibits satisfactorily fast curability, and excellent yellowing resistance, heat resistance, storage stability, and safety. (In the formula, each R1 independently represents an unsubstituted or substituted C1-10 alkyl group, or an unsubstituted or substituted C6-10 aryl group, each R2 independently represents an unsubstituted or substituted C1-10 alkyl group, or an unsubstituted or substituted C6-10 aryl group, and each R3 independently represents a hydrogen atom or an unsubstituted or substituted C1-10 alkyl group. m is a number from 1-3, and n is an integer of 2 or greater. A dashed line represents a bond.

Abstract: A silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product-metal oxide complex comprising a silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product and a metal oxide, wherein the silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product contains 5 wt % to 95 wt % of silicon nanoparticles having a volume-based mean particle size of more than 10 nm but less than 500 nm, and a hydrogen polysilsesquioxane-derived silicon oxide structure that coats the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles. The silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product is represented by the general formula SiOxHy (0.01<x<1.35, 0<y<0.35) and has Si—H bonds. The metal oxide consists of one or more metals selected from titanium, zinc, zirconium, aluminum, and iron.

Abstract: Provided is a silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product that is represented by the general formula SiOxHy (0.01<x?0.3, 0<y<0.35) and has Si—H bonds, said silicon nanoparticle-containing hydrogen polysilsesquioxane sintered product being characterized by (A) including more than 65.0 wt % of silicon nanoparticles that have a volume-based average particle size of 10-500 nm, exclusive, and that do not include particles having a particle size of 1000 nm or larger, and (B) including a silicon oxide structure derived from hydrogen polysilsesquioxane that coats the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles.

Abstract: Polysilsesquioxane covering silicon nanoparticles, or a calcined product thereof, comprising silicon nanoparticles, which have a volume-basis mean particle size of 10-500 nm, exclusive, and do not include particles having a particle size of 1000 nm or larger, and polysilsesquioxane, which covers the silicon nanoparticles and is chemically bonded to the surfaces of the silicon nanoparticles, said polysilsesquioxane covering silicon nanoparticles or the calcined product thereof having Si—H bonds. When observed using a transmission electron microscope (TEM), the thickness of the polysilsesquioxane is 1-30 nm, inclusive.

Abstract: A wiring board manufacturing method includes forming a conductor pattern within a waste board section of a wiring board including a product section and the waste board section, the conductor pattern in which a plurality of polygonal lands made of a conductor are arranged along a first direction and a second direction crossing the first direction, each of the plurality of polygonal lands making contact with an adjacent one of the plurality of polygonal lands at each apex of the plurality of polygonal lands; and selectively removing the conductor at the apex of at least part of the plurality of polygonal lands.

Abstract: A display unit includes a display panel that includes a plurality of pixels arranged in a matrix. Each of the pixels includes one of an optical modulator and a self-luminescent element, and one of an electrochromic element, an electrophoretic element, and an electrowetting element. Each of the pixels further includes a pixel circuit that is configured to selectively drive the one of the optical modulator and the self-luminescent element, and selectively drive the one of the electrochromic element, the electrophoretic element, and the electrowetting element.

Abstract: Provided are a rubber composition for tires which achieves both abrasion resistance and processability while maintaining fuel economy, and a pneumatic tire including the rubber composition. A rubber composition for tires, containing an organosilicon compound represented by the average compositional formula (I) below having a ratio of the number of sulfur atoms to the number of silicon atoms of 1.0 to 1.5, wherein x represents the average number of sulfur atoms; m represents an integer of 6 to 12; and R1 to R6 are the same or different and each represent a C1-C6 alkyl or alkoxy group, at least one of R1 to R3 and at least one of R4 to R6 are the alkoxy groups, and two or more of the alkyl or alkoxy groups for R1 to R6 may be joined to form a ring.

Abstract: An optical waveguide substrate includes a substrate that includes a recess, a buffer layer disposed on a bottom surface and a wall surface of the recess, and an optical waveguide disposed inside the recess with the buffer layer interposed therebetween and having a cladding layer disposed on the buffer layer and a core layer disposed inside the cladding layer.

Abstract: A semiconductor crystal substrate includes a first buffer layer formed of a nitride semiconductor over a substrate, a second buffer layer formed of a nitride semiconductor on the first buffer layer, a first semiconductor layer formed of a nitride semiconductor on or over the second buffer layer, and a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer. The Fe concentration of the first buffer layer is higher than the C concentration of the first buffer layer. The C concentration of the second buffer layer is higher than the Fe concentration of the second buffer layer.