Abstract: A member for semiconductor manufacturing apparatuses, which includes a ceramic electrostatic chuck and a cooling plate bonded together with a thermosetting sheet, is provided. The thermosetting sheet is made of a cured epoxy-acrylic adhesive. The adhesive contains (A) an epoxy resin capable of hydrogen transfer type polyaddition, (B) an acrylate or methacrylate polymer, and (C) a curing agent.

Abstract: A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a Ni—Au coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.

Abstract: In a step (a), a ceramic substrate, a brazing material including a metal having a large thermal expansion coefficient, a porous body having a smaller thermal expansion coefficient than the brazing material, and a feeding terminal are placed on a joint surface in such a way that a joint surface of the feeding terminal faces a joint surface of the ceramic substrate. In a step (b), the brazing material is fused to allow the brazing material to penetrate into the pores of the porous body. In this manner, a joint layer containing the brazing material and the porous body is formed, and the joint surface of the ceramic substrate and the joint surface of the feeding terminal are joined to each other through the joint layer.

Abstract: In a step (a), a guard ring is disposed on a ceramic substrate (a second member) such that one of openings of a through hole of the guard ring is covered with a joint surface of the ceramic substrate. In a step (b), a brazing material made of a metal, a powder made of a material having a smaller thermal expansion coefficient than the brazing material, and a feeding terminal are inserted into the through hole. In a step (c), the brazing material is fused to impregnate the powder with the brazing material to thereby form a joint layer including the brazing material and the powder. In this manner, the joint surface and the joint surface are joined to each other through the joint layer.

Abstract: A wafer holder 10 includes a resin adhesive layer 16 between a ceramic electrostatic chuck 12 and a metal cooling plate 14. The adhesive layer 16 includes a first layer 16a in contact with the electrostatic chuck 12, a second layer 16b in contact with the cooling plate 14, and an intermediate layer 16c located between the first layer 16a and the second layer 16b. Heat resistance of each of the first layer 16a and the intermediate layer 16c is higher than heat resistance of the second layer 16b, flexibility of the second layer 16b is higher than flexibility of each of the first layer 16a and the intermediate layer 16c, and the layers are in hermetic contact with each other.

Abstract: A joined body 10 is manufactured by joining a Mo- or Ti-made terminal 14 having a Ni coating, a Au coating, a Ni—Au coating (with Ni Serving as a base) to a recess 12a formed in a plate-shaped ceramic member 12 made of alumina or aluminum nitride through a joint layer 16. The joint layer 16 contains Au, Sn, Ag, Cu, and Ti and is in contact with a bottom surface of the recess 12a and with at least part of a side surface of the recess 12a (the entire side surface in this case). In the joint layer 16, its joint interface with the ceramic member 12 is Ti-rich. When the joined body 10 is cut in its thickness direction, the ratio of the total cross sectional area of pores to the cross-sectional area of the joint layer 16 (porosity) is 0.1 to 15%.

Abstract: In a step (a), a guard ring 60 is disposed on a ceramic substrate 12 (a second member) such that one of openings of a through hole 61 of the guard ring 60 is covered with a joint surface 13 of the ceramic substrate 12. In a step (b), a brazing material 56 made of a metal, a powder 54 made of a material having a smaller thermal expansion coefficient than the brazing material 56, and a feeding terminal 40 are inserted into the through hole 61. In a step (c), the brazing material 56 is fused to impregnate the powder 54 with the brazing material 56 to thereby form a joint layer including the brazing material 56 and the powder 54. In this manner, the joint surface 13 and the joint surface 43 are joined to each other through the joint layer.

Abstract: In a step (a), a ceramic substrate 12, a brazing material 56including a metal having a large thermal expansion coefficient, a porous body 54 having a smaller thermal expansion coefficient than the brazing material 56, and a feeding terminal 40 are placed on a joint surface 13 in such a way that a joint surface 43 of the feeding terminal 40 faces a joint surface 13 of the ceramic substrate 12. In a step (b), the brazing material 56 is fused to allow the brazing material 56 to penetrate into, the pores of the porous body 54. In this manner, a joint layer containing the brazing material 56 and the porous body 54 is formed, and the joint surface 13 of the ceramic substrate 12 and the joint stir face 43 of the feeding terminal 40 are joined to each other through the joint layer.

Abstract: A wafer holder 10 includes a resin adhesive layer 16 between a ceramic electrostatic chuck 12 and a metal cooling plate 14. The adhesive layer 16 includes a first layer 16a in contact with the electrostatic chuck 12, a second layer 16b in contact with the cooling plate 14, and an intermediate layer 16c located between the first layer 16a and the second layer 16b. Heat resistance of each of the first layer 16a and the intermediate layer 16c is higher than heat resistance of the second layer 16b, flexibility of the second layer 16b is higher than flexibility of each of the first layer 16a and the intermediate layer 16c, and the layers are in hermetic contact with each other.

Abstract: A bonded body 10 includes a plate-shaped alumina or aluminum nitride ceramic member 12 and a Mo or Ti terminal 14 having a Ni coating, a Au coating, or a Ni—Au coating (Au on Ni) and joined to a recess 12a in the ceramic member 12 with a joint layer 16 therebetween. The joint layer 16 contains Au, Ge, Ag, Cu, and Ti and is in contact with at least part of the side surfaces (herein the entire side surfaces) and the bottom surface of the recess 12a. Ti is rich in the joint interface between the joint layer 16 and the ceramic member 12. The percentage (porosity) of the sum of the cross-sectional areas of pores to the cross-sectional area of the joint layer 16 in a cross-section taken across the thickness of the bonded body 10 is 0.1% to 15%.

Abstract: A member 10 for semiconductor manufacturing apparatuses, which includes an aluminum electrostatic chuck 12 and a cooling plate 14 bonded together with a thermosetting sheet 16, is provided. The thermosetting sheet 16 is made of a cured epoxy-acrylic adhesive. The adhesive contains (A) an epoxy resin capable of hydrogen transfer type polyaddition, (B) an acrylate or methacrylate polymer, and (C) a curing agent.

Abstract: A bonded body 10 includes a plate-shaped alumina or aluminum nitride ceramic member 12 and a Mo or Ti terminal 14 having a Ni coating, a Au coating, or a Ni—Au coating (Au on Ni) and joined to a recess 12a in the ceramic member 12 with a joint layer 16 therebetween. The joint layer 16 contains Au, Ge, Ag, Cu, and Ti and is in contact with at least part of the side surfaces (herein the entire side surfaces) and the bottom surface of the recess 12a. Ti is rich in the joint interface between the joint layer 16 and the ceramic member 12. The percentage (porosity) of the sum of the cross-sectional areas of pores to the cross-sectional area of the joint layer 16 in a cross-section taken across the thickness of the bonded body 10 is 0.1% to 15%.

Abstract: An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more and 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Abstract: A substrate supporting member includes: a plate-shaped ceramic body having a surface serving as a substrate supporting surface; a plate-shaped composite material body which is joined to a surface of the ceramic body opposite to the substrate supporting surface with a joint material interposed therebetween and the plate-shaped composite material body made of porous ceramic with pores filled with metal, the composite material body having a porosity of more than 0% and not more than 5%; and a metallic plate which is joined to a surface of the composite material body opposite to the surface joined to the ceramic body with a joint material interposed therebetween.

Abstract: An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina, an electrode disposed in an upper part of the base, and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium.

Abstract: An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina; an electrode disposed in an upper part of the base: and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium.

Abstract: An electrostatic chuck comprises a dielectric ceramic layer made of an alumina sintered body having a volume resistivity equal to or greater than about 1×1017?·cm at room temperature and a volume resistivity equal to or greater than about 1×1014?·cm at 300° C., and an electrode formed on one surface of the dielectric ceramic layer.

Abstract: An electrostatic chuck includes an ESC electrode E1 that is disc-shaped in plan view, an ESC electrode E2 that is doughnut-shaped in plan view, and a dielectric layer formed to cover surfaces of the ESC electrodes E1 and E2. The dielectric layer includes a disc-shaped dielectric region R1 formed in an area corresponding to the surface of the ESC electrode E1, and a doughnut-shaped dielectric region R2 formed in an area corresponding to the surface of the ESC electrode E2, and these two dielectric regions R1 and R2 are sintered seamlessly into an integrated form. The dielectric regions R1 and R2 are formed using different materials having different volume resistivities with the same kind of sintering additives. To each of the ESC electrodes E1 and E2, a terminal for voltage application is connected so that voltage can be applied individually to the ESC electrodes E1 and E2.

Abstract: A substrate supporting member includes: a plate-shaped ceramic body having a surface serving as a substrate supporting surface; a plate-shaped composite material body which is joined to a surface of the ceramic body opposite to the substrate supporting surface with a joint material interposed therebetween and made of porous ceramic with pores filled with metal, the composite material body having a porosity of more than 0% and not more than 5%; and a metallic plate which is joined to a surface of the composite material body opposite to the surface joined to the ceramic body with a joint material interposed therebetween.

Abstract: A method of fabricating a substrate placing stage includes the step of providing a plate-shaped ceramic base having a substrate placing surface on a side of the ceramic base. The method includes the step of providing a plate-shaped ceramic base formed of a composite material containing components of a ceramic material and an aluminum alloy. The method includes the step of inserting a joint material including an aluminum alloy layer between the ceramic base and the cooling member. The method includes the step of heating the joint material at a temperature in a range from TS ° C. to (TS-30) °C. (TS °C.: a solidus temperature of the aluminum alloy). The method includes the step of pressing substantially normally joint surfaces of the ceramic base and the cooling member, thereby joining the ceramic base and the cooling member via the joint material to obtain a joint layer including the aluminum alloy layer having a thickness in a range from 50 ?m to 200 ?m after joining.