Abstract: Provided are a resin tube for a guide wire, a method for manufacturing a resin tube for a guide wire, and a guide wire, configured such that the resin tube makes point contact in the axial direction with an object of contact at working site, thereby reducing frictional resistance and yielding excellent sliding properties, while also being prevented from kinking and collapsing, and having excellent buckling resistance. The resin tube for a guide wire is characterized in that the outer shape of a cross-section perpendicular to the axial direction is polygonal, elliptic, or irregular, that the resin tube is twisted in a helical shape about a deep inner-core hole as the axis of twisting, the deep inner-core hole extending in the axial direction and allowing a core wire to be inserted therein, and that the resin tube is provided with a trunk section having an undulation on the outer surface caused by the twisted eccentric wall thickness.

Abstract: A plurality of control units capable of communicating with each other via a data communication network (TU) are disposed in distribution. One of the plurality of control units is set as an information management control unit (H1) having writable nonvolatile storing means. Upon activation with power supply thereof, the information management control unit (H1) executes a control management information distributing process for transmitting control management information stored in a memory (50) to storage object control units (H2-H6) via the communication network (TU). Upon activation with power supply thereto, each of the storage object control units (H2-H6) executes a control management information obtaining process for obtaining the control management information transmitted from the control management information control unit (H1).

Abstract: A transfer device according to an embodiment transfers blocks generated by dividing a frame into pieces of data and adding a synchronization header each of the pieces of data. The blocks comprise a first, second and third blocks in this order. The transfer device is configured to acquire a first synchronization header in the first block, a second synchronization header in the second block and a third synchronization header in the third block, judge, in a case where a value of the second synchronization header is incorrect, as to whether or not the value of the second synchronization header can be estimated based on the first and the third synchronization headers so that the second block is consistent with the first and third blocks, and correct the second synchronization header into the estimated value.

Abstract: A plurality of control units capable of communicating with each other via a data communication network (TU) are disposed in distribution. One of the plurality of control units is set as an information management control unit (H1) having writable nonvolatile storing means. Upon activation with power supply thereof, the information management control unit (H1) executes a control management information distributing process for transmitting control management information stored in a memory (50) to storage object control units (H2-H6) via the communication network (TU). Upon activation with power supply thereto, each of the storage object control units (H2-H6) executes a control management information obtaining process for obtaining the control management information transmitted from the control management information control unit (HI).

Abstract: A vehicle lamp has first and second lamp chamber portions each including: a light source; a casing having opening and portion for reflecting light emitted from the light source; and lens portion for closing the opening of the casing; the first and second lamp chamber portions each forming lamp chamber partitioned with the casing and the lens portion, wherein the lens portion of the first lamp chamber portion passes light through substantially forward or backward from a vehicle; at least a part of the second lamp chamber portion is disposed within the lamp chamber of the first lamp chamber portion; and the second lamp chamber portion overlaps with the light source of the first lamp chamber portion in the substantially longitudinal direction.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: A vehicle lamp has first and second lamp chamber portions each including: a light source; a casing having opening and portion for reflecting light emitted from the light source; and lens portion for closing the opening of the casing; the first and second lamp chamber portions each forming lamp chamber partitioned with the casing and the lens portion, wherein the lens portion of the first lamp chamber portion passes light through substantially forward or backward from a vehicle; at least a part of the second lamp chamber portion is disposed within the lamp chamber of the first lamp chamber portion; and the second lamp chamber portion overlaps with the light source of the first lamp chamber portion in the substantially longitudinal direction.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: It is disclosed a dielectric element comprising a lower electrode, a dielectric layer, and an upper electrode which are provided on a substrate, in which at least one of the electrodes is a Pt layer, a Ru layer is used as a base layer for the Pt layer. In the fabrication of the dielectric element, the Pt layer is formed by electroplating, a photoresist pattern is used as a plating mask, and an Ru layer is formed as a seed layer. The present invention makes it possible to provide a dielectric element using Pt as an electrode material, that is capable of easily forming a Pt electrode having excellent electrical characteristics without generating voids or seams, that is capable of forming a fine pattern, and that does not occur contamination in a processing chamber, and a method for fabricating a dielectric element of having the characteristics mentioned above.

Abstract: There is disclosed a gas barrier film having, as a base film, a polypropylene film, which makes it possible to take advantage of the excellent gas barrier property inherent to an SiOx thin film formed on the polypropylene film, and which is free from chlorine which would give a bad influence to the environment. This gas barrier film comprises a polypropylene film whose surface is bonded with tuning molecular chains having, as a main skeleton, an —O—Si—O— structure by enabling the oxygen (—O—) thereof to be bonded to carbon atoms of the surface of the polypropylene film, and an SiOx thin film formed on the surface of the polypropylene film where the tuning molecular chains are bonded, the SiOx thin film being bonded to the tuning molecular chains interposed between the polypropylene film and the SiOx thin film.

Abstract: The present invention provides an adhesive comprising a polyester polyol or polyurethane polyol possessing structural units represented by the following general formula (I) within its molecular structure, and an organic polyisocyanate in which the isocyanate groups may be protected: wherein R1 and R2 are the same or different and each represents lower alkyl. The adhesive of the present invention exhibits an excellent initial adhesion strength; and provides adhered objects that exhibit an excellent permanent adhesion strength, hot water resistance, flexibility, flexibility at a low temperature, and fatigue resistance, and is useful in adhering plastic, metal, and the like. In addition, the present invention provides a method of mixing the aforementioned components and using the mixture for adhesion, and a use of the mixture of the aforementioned components.

Abstract: Disclosed is, for example, bis(2,5-dimethyl-3-(2-hydroxy-5-ethylbenzyl)-4-hydroxyphenyl)methane and quinonediazide ester thereof. These are used for positive photoresist compositions. According to the invention, positive photoresist compositions having a high definition, a high sensitivity and a large exposure margin can be provided.

Abstract: The present invention provides a polyester polyol comprising within its molecular structure both structural units respectively represented by the following general formula (I) and general formula (II). In addition, the present invention provides a polyurethane using the polyester polyol of the present invention. This polyurethane exhibits excellent resistance to hydrolysis, resistance to alkali, mechanical strength, and the like. ##STR1## (wherein R.sup.1 and R.sup.2 are the same or different and each represents lower alkyl having 1 to 8 carbon atoms), ##STR2## (wherein R.sup.3 and R.sup.4 are the same or different and each represents lower alkyl having 1 to 8 carbon atoms).

Abstract: Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.

Abstract: Diodes rows are arranged at interval L in the same direction as that of arrangement of cell rows. Each of the diodes rows has a row of pn junctions each formed on a substrate and arranged along a track vertical to interconnection tracks. The interconnection between cells automatically connect the gates of MOS transistors to the diodes without the need for considering which gate should be connected to the diode. The length of wiring between the gate of MOS transistor and a diode is less than an upper limit value for preventing electrostatic breakdown at a gate oxide in a process of fabricating the semiconductor integrated circuit. Each of the pn junctions may be formed under necessary input signal lines, necessary ground line, the bottom of the drain of MOS transistor or under the power supply line outside of macrocell.

Abstract: A connecting structure for connecting conductors used for wiring in a semiconductor device comprises a first conductor provided on a part of the semiconductor device for passing the flow of electrons, an insulator provided on the first conductor and formed with a contact hole, and a second conductor provided on the insulator for passing the flow of electrons, in which the second conductor is provided so as to sandwich the insulator together with a part of the first conductor. The first and second conductors are contacted to each other across the insulator at the contact hole so that the electrons flow through the contact hole. The contact hole extends in a general direction of a flow of electrons passing therethrough and has a stepped shape in which a width measured perpendicularly to the general direction of the flow of electrons increases stepwise towards the general direction of the flow of electrons.

Abstract: In a printer in which a paper is pressed against a platen by a bail roller, the bail roller is automatically released from the platen, during paper loading, so as not to obstruct the paper feeding.The bail roller is pivotally moved between a loading position and a release position by a pivoting unit. The pivotal movement of the bail roller is performed by a paper feed motor so that the drive force of the paper feed motor is transmitted to the pivoting unit via a clutch unit. The connecting and disconnection of the clutch unit is controlled as a printing head carriage is moved to an outer area outside the printing area.

Abstract: A semiconductor memory device including at least word lines and bit lines with memory cells located at each cross point therebetween. Each of the word lines is divided to form segmented word lines and each of the word line segments is driven by an individual private word driver. The individual private word drivers are activated together in response to a word selection signal. Level shifting diodes are employed in the bit line drivers to offset a voltage level change caused by the segment word drivers.