Abstract: A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.

Abstract: The present invention provides a treatment liquid excellent in resolution, a property of suppressing reduction in film thickness, and a property of suppressing residues, in a case of being used for at least one of developing or washing a resist film. Further, the present invention provides a pattern forming method for the above-described treatment liquid. The treatment liquid of the present invention is a treatment liquid for patterning a resist film, which is used for performing at least one of development or washing after exposure on a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the treatment liquid including a first organic solvent that satisfies a predetermined condition and a second organic solvent that satisfies a predetermined condition.

Abstract: In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

Abstract: A magnetic response section provided by a scale of a magnetic linear sensor is configured so that changes in magnetic influence on a magnetic detection head appear alternately and repeatedly every first pitch in a displacement detection direction. The magnetic detection head is provided on one side of the scale in the first direction, which is a direction perpendicular to the displacement detection direction, and provided with a base substrate section and a plurality of signal output sections. The signal output sections are arranged on an insulating plate and in the displacement detection direction at a second pitch based on a first pitch. The first conductive pattern and the second conductive pattern included by each of the signal output sections are formed to arrange coil elements side by side in an elongated area in a second direction orthogonal to both the displacement detection direction and the first direction.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: A method for manufacturing an electronic device, the method including performing a treatment using a treatment liquid for manufacturing a semiconductor, the treatment liquid for manufacturing a semiconductor includes: a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; water; and one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A ratio T1 of a total mass of the metal atoms to the sum of a total mass of the additive and the total mass of the metal atoms is in a range from 1 ppt to 1 ppm.

Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores a treatment liquid for manufacturing a semiconductor, and the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms and a total content of particulate metal is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

Abstract: A memory device includes a first memory cell array, a second memory cell array disposed in a first direction with respect to the first memory cell array, a first contact plug extending in the first direction through the first memory cell array, and a second contact plug extending in the first direction through the second memory cell array. The first memory cell array includes first electrode layers stacked in a first direction, and a first semiconductor pillar extending through the first electrode layers in the first direction. The second memory cell array including second electrode layers stacked in the first direction, and a second semiconductor pillar extending in the first direction through the second electrode layers. The first contact plug is electrically connected to the first semiconductor pillar, and the second contact plug is electrically connected to the second semiconductor pillar and the first contact plug.

Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor and a pattern forming method, in which the formation of particles including metal atoms can be reduced and an excellent pattern can be formed. A treatment liquid for manufacturing a semiconductor according to an embodiment of the present invention includes: a quaternary ammonium compound represented by Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn, and a total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.

Abstract: An object of the present invention is to provide a treatment liquid which is capable of suppressing the generation of defects of a semiconductor device and has excellent corrosion resistance and wettability. The treatment liquid of the present invention is a treatment liquid for a semiconductor device, containing at least one organic solvent selected from the group consisting of ethers, ketones, and lactones, water, and a metal component including at least one metal element selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, Ti, and Zn, in which the content of water in the treatment liquid is 100 ppb by mass to 100 ppm by mass and the content of the metal component in the treatment liquid is 10 ppq by mass to 10 ppb by mass.

Abstract: The storage container according to the embodiment of the present invention includes a storage portion storing a liquid composition containing an organic solvent having a moisture concentration of 400 ppm by mass or less and a surface treatment agent. At least a portion, which is in contact with the liquid composition, of an inner wall of the storage portion has a contact angle ? with respect to water of 10 degrees or more and 150 degrees or less.

Abstract: A relief valve that includes a tube; a valve configured to slide along an inner wall of the tube in an axial direction, and a spring that urges the valve, wherein the valve has a hydraulic pressure receiving surface on a first axial side that is one side in the axial direction, and a spring abutment against which the spring abuts, on a second axial side opposite to the first axial side, and the tube has a discharge oil passage having an opening in the inner wall and extending through the inner wall in a radial direction.

Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.

Abstract: An object of the present invention is to provide a chemical liquid which exhibits excellent defect inhibition performance even after long-term preservation, a kit, a pattern forming method, a chemical liquid manufacturing method, and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, an acid component, and a metal component. The content of the acid component is equal to or greater than 1 mass ppt and equal to or smaller than 15 mass ppm with respect to the total mass of the chemical liquid. The content of the metal component is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid.

Abstract: The present invention provides a member which makes is possible to obtain excellent residue defect inhibition properties and excellent bridge defect inhibition properties of a chemical liquid in a case where the member is brought into contact with the chemical liquid. The present invention also provides a container, a chemical liquid storage body, a reactor, a distillation column, a filter unit, a storage tank, a pipe line, and a chemical liquid manufacturing method. The member according to an embodiment of the present invention is a member that will be brought into contact with a chemical liquid. A surface of the member is constituted with stainless steel containing chromium atoms and iron atoms. In a case where an atomic ratio of the chromium atoms to the iron atoms is measured from the surface of the member to a position 10 nm below the surface in a depth direction, a maximum value of the atomic ratio is found in a region extending 3 nm from the surface of the member in the depth direction.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A is a porous membrane containing a polyimide-based resin.

Abstract: A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.

Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.