Patents by Inventor Tetsuya Takeuchi

Tetsuya Takeuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7924900
    Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of ?/8 to 3?/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: April 12, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tetsuya Takeuchi
  • Publication number: 20110026555
    Abstract: A surface emitting laser includes a pair of multilayer mirrors disposed opposing to each other, and an active layer disposed between the multilayer mirrors. In at least one multilayer mirror of the pair of multilayer mirrors, a plurality of first pair layers are stacked, each first pair layer is formed from a high-refractive index layer having a first strain and a low-refractive index layer having a second strain; and a second pair layer is included, the second pair layer is formed of one of the high-refractive index layer and the low-refractive index layer of the first pair layer in which one of the high-refractive index layer and the low-refractive index layer of the first pair layer is replaced with a layer formed from a quaternary or higher mixed crystal semiconductor material having a third strain.
    Type: Application
    Filed: July 15, 2010
    Publication date: February 3, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tetsuya Takeuchi
  • Publication number: 20100329745
    Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
    Type: Application
    Filed: September 14, 2010
    Publication date: December 30, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tatsuro Uchida, Mitsuhiro Ikuta, Tetsuya Takeuchi
  • Publication number: 20100322669
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Application
    Filed: August 31, 2010
    Publication date: December 23, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Patent number: 7839913
    Abstract: A surface emitting laser that oscillates at a wavelength ? includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of AlxGa1-xAs (1?x>0) and a second semiconductor sublayer having a composition of AlyGa1-yAs (1>y>0 and x>y).
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: November 23, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Uchida, Tetsuya Takeuchi
  • Patent number: 7830944
    Abstract: A surface-emitting laser has an active layer between a first distributed Bragg reflector and a second distributed Bragg reflector. The first distributed Bragg reflector is formed so as to have a resonant mode and a first longitudinal mode different from the resonant mode included in the reflectivity stop band and a second longitudinal mode different from the resonant mode and the first longitudinal mode excluded from the reflectivity stop band. Oscillation is suppressed in the first longitudinal mode and in the second longitudinal mode. As a result, the surface-emitting laser can oscillate in a single longitudinal mode, suppressing longitudinal mode hopping.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: November 9, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Takeshi Uchida
  • Publication number: 20100272143
    Abstract: Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not ?/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of ?/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength ? includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than ?/4. The second layer has an optical thickness larger than ?/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.
    Type: Application
    Filed: June 2, 2010
    Publication date: October 28, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tetsuya Takeuchi
  • Publication number: 20100252809
    Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 7, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tetsuya Takeuchi
  • Patent number: 7807485
    Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: October 5, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tatsuro Uchida, Mitsuhiro Ikuta, Tetsuya Takeuchi
  • Patent number: 7809040
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Grant
    Filed: February 8, 2008
    Date of Patent: October 5, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama
  • Patent number: 7796662
    Abstract: Provided is a laser having a multilayer reflector that suppresses the multimode operation. A vertical cavity surface emitting laser includes a first mirror, a cavity having an active layer, and a second mirror that are laminated. The second mirror is a multilayer reflector comprised of a first layer and a second layer that are alternately plurally laminated, the second layer having a refractive index higher than that of the first layer. At least one of the plural second layers has an oxidized confinement structure having an oxidized region and a non-oxidized region.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: September 14, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takeshi Uchida, Tetsuya Takeuchi
  • Patent number: 7795048
    Abstract: A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.
    Type: Grant
    Filed: April 24, 2006
    Date of Patent: September 14, 2010
    Assignee: Fujitsu Semiconductor Limited
    Inventors: Kazutoshi Izumi, Tetsuya Takeuchi
  • Patent number: 7786495
    Abstract: A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
    Type: Grant
    Filed: October 28, 2008
    Date of Patent: August 31, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tetsuya Takeuchi, Makoto Koto, Kenji Yamagata, Yoshinobu Sekiguchi, Takao Yonehara
  • Patent number: 7768021
    Abstract: A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers.
    Type: Grant
    Filed: December 12, 2006
    Date of Patent: August 3, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tetsuya Takeuchi
  • Patent number: 7756187
    Abstract: Provided are an optical device including a multilayer reflector having a layer whose optical thickness is not ?/4, and a vertical cavity surface emitting laser using the optical device. A resonance frequency shift or a reduction in reflectivity which is caused by a deviation from an optical thickness of ?/4 can be suppressed to improve characteristics and yield. The optical device for generating light of a wavelength ? includes a reflector and an active layer. The reflector is a semiconductor multilayer reflector including a first layer and a second layer which are alternatively laminated and have different refractive indices. The first layer has an optical thickness smaller than ?/4. The second layer has an optical thickness larger than ?/4. The interface between the first layer and the second layer is located at neither a node nor an antinode of an optical intensity distribution within the reflector.
    Type: Grant
    Filed: July 24, 2007
    Date of Patent: July 13, 2010
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tetsuya Takeuchi
  • Publication number: 20100027578
    Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of ?/8 to 3?/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
    Type: Application
    Filed: July 27, 2009
    Publication date: February 4, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tetsuya Takeuchi
  • Publication number: 20100027576
    Abstract: A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of ?, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure.
    Type: Application
    Filed: July 27, 2009
    Publication date: February 4, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Tetsuya Takeuchi
  • Publication number: 20100029030
    Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
    Type: Application
    Filed: July 27, 2009
    Publication date: February 4, 2010
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tatsuro Uchida, Mitsuhiro Ikuta, Tetsuya Takeuchi
  • Patent number: 7609745
    Abstract: A novel semiconductor laser device is provided which can suppress internal optical absorption even when In is used as a material for a semiconductor multilayer mirror containing a nitride. The semiconductor laser device has two mirrors disposed to face each other, and an active layer disposed therebetween. At least one of the mirrors is a multilayer mirror having first nitride semiconductor layers containing Ga and second nitride semiconductor layers containing Al, which are alternately laminated to each other. The second nitride semiconductor layer contains In and includes a first region having a refractive index lower than that of the first nitride semiconductor layer, and a second region having a refractive index lower than that of the first nitride semiconductor layer and an In concentration lower than that of the first region. The second region is disposed closer to the active layer than the first region.
    Type: Grant
    Filed: August 17, 2007
    Date of Patent: October 27, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventor: Tetsuya Takeuchi
  • Publication number: 20090252532
    Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
    Type: Application
    Filed: June 18, 2009
    Publication date: October 8, 2009
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Tetsuya Takeuchi, Mamoru Uchida, Tomoyuki Miyamoto, Fumio Koyama