Patents by Inventor Thanh X. Nguyen

Thanh X. Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10886113
    Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: January 5, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Thanh X. Nguyen, Weimin Zeng, Yong Cao
  • Patent number: 10734235
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Grant
    Filed: August 1, 2018
    Date of Patent: August 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jothilingam Ramalingam, Thanh X. Nguyen, Zhiyong Wang, Jianxin Lei, Xianmin Tang
  • Publication number: 20190189407
    Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.
    Type: Application
    Filed: December 11, 2018
    Publication date: June 20, 2019
    Inventors: THANH X. NGUYEN, ALEXANDER JANSEN, YANA CHENG, RANDAL SCHMIEDING, YONG CAO, XIANMIN TANG, WILLIAM JOHANSON
  • Publication number: 20190105097
    Abstract: An apparatus for removing a tattoo includes a control unit having one or more power sources; a head unit coupled to the control unit, wherein the head unit includes a body and a plurality of needles protruding from the body, wherein the plurality of needles includes at least one supply needle and at least one return needle; and a flexible tube coupling the head unit to the control unit, wherein the one or more power sources are electrically coupled to the plurality of needles through the flexible tube, wherein the control unit is configured to deliver power to the at least one supply needle such that power flows from the at least one supply needle to the at least one return needle during use.
    Type: Application
    Filed: October 11, 2017
    Publication date: April 11, 2019
    Inventors: Thanh X. Nguyen, Tam Luu
  • Patent number: 10199204
    Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: February 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Srinivasa Yedla, Sundarapandian Reddy, Uday Pai, Kirankumar Savandaiah, Thanh X. Nguyen, Muhammad M. Rasheed, Jallepally Ravi
  • Publication number: 20180337052
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; and generating a plasma within the plasma processing chamber to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Application
    Filed: August 1, 2018
    Publication date: November 22, 2018
    Inventors: Jothilingam RAMALINGAM, Thanh X. NGUYEN, Zhiyong WANG, Jianxin LEI, Xianmin TANG
  • Patent number: 10043670
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: August 7, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jothilingam Ramalingam, Thanh X. Nguyen, Zhiyong Wang, Jianxin Lei, Xianmin Tang
  • Publication number: 20180151337
    Abstract: Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.
    Type: Application
    Filed: November 20, 2017
    Publication date: May 31, 2018
    Inventors: THANH X. NGUYEN, WEIMIN ZENG, YONG CAO
  • Patent number: 9960021
    Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: May 1, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Uday Pai, William Fruchterman, Keith A. Miller, Muhammad M. Rasheed, Thanh X. Nguyen, Kirankumar Savandaiah
  • Patent number: 9928997
    Abstract: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: March 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Keith A. Miller, Thanh X. Nguyen, Ilya Lavitsky, Randy Schmieding, Prashanth Kothnur
  • Patent number: 9773665
    Abstract: Methods and apparatus for reducing particles generated in a process carried out in a process chamber are provided herein. In some embodiments, a process kit shield includes: a body having a surface facing a processing volume of a physical vapor deposition (PVD) process chamber, wherein the body is composed of aluminum oxide (Al2O3), and a silicon nitride layer on the surface of the body.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: September 26, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weimin Zeng, Thanh X. Nguyen, Yong Cao
  • Publication number: 20170117153
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 27, 2017
    Inventors: Jothilingam RAMALINGAM, Thanh X. NGUYEN, Zhiyong WANG, Jianxin LEI, Xianmin TANG
  • Patent number: 9633839
    Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.
    Type: Grant
    Filed: June 19, 2015
    Date of Patent: April 25, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Weimin Zeng, Thanh X. Nguyen, Yana Cheng, Yong Cao, Daniel Lee Diehl, Srinivas Guggilla, Rongjun Wang, Xianmin Tang
  • Patent number: 9633824
    Abstract: Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.
    Type: Grant
    Filed: March 5, 2013
    Date of Patent: April 25, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Thanh X. Nguyen, Yong Cao, Muhammad Rasheed, Xianmin Tang
  • Publication number: 20160372319
    Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.
    Type: Application
    Filed: June 19, 2015
    Publication date: December 22, 2016
    Inventors: Weimin ZENG, Thanh X. NGUYEN, Yana CHENG, Yong CAO, Daniel Lee DIEHL, Srinivas GUGGILLA, Rongjun WANG, Xianmin TANG
  • Publication number: 20160172168
    Abstract: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.
    Type: Application
    Filed: February 9, 2015
    Publication date: June 16, 2016
    Inventors: Keith A. Miller, THANH X. NGUYEN, ILYA LAVITSKY, RANDY SCHMIEDING, PRASHANTH KOTHNUR
  • Patent number: 9340866
    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: May 17, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Alan Ritchie, Donny Young, Wei W. Wang, Ananthkrishna Jupudi, Thanh X. Nguyen, Kirankumar Savandaiah
  • Patent number: 9281167
    Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: March 8, 2016
    Assignee: Applied Materials, Inc.
    Inventors: Thanh X Nguyen, Rongjun Wang, Muhammad M Rasheed, Xianmin Tang
  • Publication number: 20150203960
    Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.
    Type: Application
    Filed: January 20, 2015
    Publication date: July 23, 2015
    Inventors: SRINIVASA YEDLA, SUNDARAPANDIAN REDDY, UDAY PAI, KIRANKUMAR SAVANDAIAH, THANH X. NGUYEN, MUHAMMAD M. RASHEED, JALLEPALLY RAVI
  • Patent number: 9087679
    Abstract: Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
    Type: Grant
    Filed: February 3, 2012
    Date of Patent: July 21, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad M. Rasheed, Rongjun Wang, Thanh X. Nguyen, Alan A. Ritchie