Abstract: A tunable CMOS circuit comprising a CMOS element and a tunable load. The CMOS element is configured to receive an analogue input signal. The tunable load is connected to the CMOS element and configured to set a switch point of the CMOS element. The CMOS element is configured to output an output current that is largest when the analogue input signal is equal to the switch point. The combination of a CMOS element with a tunable load may also provide a hardware implementation of fuzzy logic. A fuzzy logic gate comprises an input node, a CMOS logic gate, a tunable load, and an output node. The input node is configured to receive an analogue input signal. The CMOS logic gate is connected to the input node. The tunable load is connected to the CMOS logic gate such that the tunable load is provided on a current path connected to the output node. The output node is configured to output an analogue output signal.

Abstract: A tunable CMOS circuit comprising a CMOS element and a tunable load. The CMOS element is configured to receive an analogue input signal. The tunable load is connected to the CMOS element and configured to set a switch point of the CMOS element. The CMOS element is configured to output an output current that is largest when the analogue input signal is equal to the switch point. The combination of a CMOS element with a tunable load may also provide a hardware implementation of fuzzy logic. A fuzzy logic gate comprises an input node, a CMOS logic gate, a tunable load, and an output node. The input node is configured to receive an analogue input signal. The CMOS logic gate is connected to the input node. The tunable load is connected to the CMOS logic gate such that the tunable load is provided on a current path connected to the output node. The output node is configured to output an analogue output signal.

Abstract: A tunable CMOS circuit comprising a CMOS element and a tunable load. The CMOS element is configured to receive in an analogue input signal. The tunable load is connected to the CMOS element and configured to set a switch point of the CMOS element. The CMOS element is configured to output an output current that is largest when the analogue input signal is equal to the switch point. The combination of a CMOS element with a tunable load may also provide a hardware implementation of fuzzy logic. A fuzzy logic gate comprises an input node, a CMOS logic gate including a tunable load, and an output node. The input node is configured to receive an analogue input signal. The CMOS logic gate is connected to the input node. The tunable load is provided on a current path connected to the output node. The output node is configured to output an analogue output signal.

Abstract: The present invention provides a method and system for processing data from an event, such as a neurological event. When a neurological event occurs, a spike in a neural waveform is generated. The spike can be detected and used to determine information about the neurological event. The method uses data values from a resistive switching component capable of undergoing a resistive state change when a voltage is applied to it. The data values represent a sequence of resistive state changes of the resistive switching component which correspond to the neurological event. The method further comprises processing the received data values to identify a resistive state change corresponding to the neurological event and to obtain information about the neurological event. Thus, a method and system for processing neural spikes is provided.

Abstract: The present invention provides a method for detecting events in an input signal. The method uses a volatile resistive switching component to detect the events in the input signal. The method comprising identifying the events based on sampling an output from the resistive switching component.

Abstract: A tunable CMOS circuit comprising a CMOS element and a tunable load. The CMOS element is configured to receive in an analogue input signal. The tunable load is connected to the CMOS element and configured to set a switch point of the CMOS element. The CMOS element is configured to output an output current that is largest when the analogue input signal is equal to the switch point. The combination of a CMOS element with a tunable load may also provide a hardware implementation of fuzzy logic. A fuzzy logic gate comprises an input node, a CMOS logic gate including a tunable load, and an output node. The input node is configured to receive an analogue input signal. The CMOS logic gate is connected to the input node. The tunable load is provided on a current path connected to the output node. The output node is configured to output an analogue output signal.

Abstract: The present invention provides a method for detecting events in an input signal. The method volatile resistive switching component to detect the events in the input signal. The method comprising identifying the events based on sampling an output from the resistive switching component.

Abstract: The present invention provides a method and system for processing data from an event, such as a neurological event. When a neurological event occurs, a spike in a neural waveform is generated. The spike can be detected and used to determine information about the neurological event. The method uses data values from a resistive switching component capable of undergoing a resistive state change when a voltage is applied to it. The data values represent a sequence of resistive state changes of the resistive switching component which correspond to the neurological event. The method further comprises processing the received data values to identify a resistive state change corresponding to the neurological event and to obtain information about the neurological event. Thus, a method and system for processing neural spikes is provided.

Abstract: A sensor comprising a memory device having a first electrode and a first chemical-sensing layer coupled to the first electrode. The chemical-sensing layer, in the presence of an analyte, is arranged to change a property of the Memristive device. The sensor can detect an analyte by providing a sample to be detected proximate the chemical sensing layer, observing the state of the memory element; and determining a property of the sample by comparing the observed state of the memory element with a previous state. The sensor is manufactured by depositing a second electrode on a surface, depositing an active layer or layers onto said second electrode, depositing a first electrode onto said active layer(s), and coupling a chemically sensitive layer to the first electrode.

Abstract: A sensor system comprising a substrate and integrated onto the substrate an array (7) of sensor elements (1), each sensor element comprising one or more inductors (3), one or more electrochemical sensors (4), and one or more optical sensors (2). The system further comprising a controller configured in use to separately address each of the sensor elements (1) to drive the respective inductors and receive outputs of the respective sensors.

Abstract: A method of manufacturing an electrically actuable switch and comprising: depositing a first electrode on a surface; depositing an active layer or layers on top of said first electrode; and depositing a second electrode on top of said active layer(s), wherein said step of depositing an active layer or layers is performed in an atmosphere into which a reactive gas is introduced, the partial pressure of the reactive gas being varied during the process so as to introduce dopants into the active layer in a concentration which varies across the active layer.