Abstract: An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.

Abstract: A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

Abstract: In a method for preserving an air bridge structure on an integrated circuit chip, without sacrificing metallization routing area in an overlying high density interconnect structure, a protective layer is sublimed over the air bridge to provide mechanical strength while preventing contamination and deformation during processing. A high density interconnect structure is applied over the chip and protective layer. A small portion of the high density interconnect structure is removed from the area over the air bridge structure, and the protective layer is then sublimed away, leaving the resultant structure with an undamaged air bridge which is free of residue.

Abstract: A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

Abstract: A multichip module (incorporating a high density interconnect structure) has: a first portion containing a substrate with semiconductor chips therein, with each chip having contact pads; a second portion comprising a (HDI) structure interconnecting the chip pads; and a solvent-soluble release layer bonding the two portions together and allowing for easy removal of the HDI structure from the substrate of the module by immersion in an appropriate solvent for the release layer.

Abstract: In a method for preserving an air bridge structure on an integrated circuit chip used in an overlay process, a patternable protective layer is applied for providing mechanical strength to prevent deformation during subsequent processing. A polymeric film layer is applied over the chip and protective layer, and interconnections are fabricated through the polymeric film layer. The polymeric film layer is removed from the area over the air bridge structure. The patternable protective layer is then removed, leaving the resultant structure with an undamaged air bridge which is free of residue.

Abstract: A plasticized polyetherimide, such as a blend of polyetherimide and a pentaerythritol tetrabenzoate ester, has been found useful as a low temperature laminating adhesive for making high density interconnect circuit arrays.

Abstract: A polyhydrazine is used to insolubilize a soluble polyimide. Soluble polyimide films on printed circuit boards can be insolubilized in this manner.

Abstract: A device containing a fluid material is sealed by sealant material placed essentially completely around the periphery of the device to join spaced apart first and second members of the device; and aperture is formed through the seal and the device interior is evacuated. Then fluid material is introduced into the device interior through the aperture and only a limited region of the device, confined substantially to the aperture is exposed to electromagnetic radiation from a laser or the like, to hermetically close the aperture when a photoreactive adhesive is injected into the aperture to cause the adhesive to solidify when contacted by the electromagnetic radiation. In an alternate embodiment, the aperture is filled with a plug of thermoplastic material, which is then selectively heat treated by a laser or the like to cause the plug to bind to the aperture boundary and hermetically enclose the fluid material.

Abstract: A metal is electrolessly plated on a substrate which is first coated with at least one ablatively-removable layer that is selectively irradiated with laser radiation to obtain a pattern for the deposition of metal on the substrate. The electroless plating solution applied to the substrate after the irradiated substrate is coated with a catalyst also serves to remove the unirradiated portion of the ablatively-removable layer. The method is particularly suited for plating fine lines of metal, especially on non-planar surfaces.