Patents by Inventor Thibaut Desrues

Thibaut Desrues has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150243833
    Abstract: A method for producing an electrical contact of a semiconductor device, including: depositing an optically transparent electrically conductive layer on a face of the device; depositing first and second dielectric layers on the layer, in which the second dielectric layer can be selectively laser etched; selectively laser etching the second dielectric layer, forming a first opening; producing a second opening aligned with the first opening in the first dielectric layer; depositing an electrically conductive material on the optically transparent electrically conductive layer through the second opening such that portions of the electrically conductive material are deposited on the second dielectric layer, around the first opening; and etching parts of the second dielectric layer which are not covered with portions of the electrically conductive material.
    Type: Application
    Filed: August 22, 2013
    Publication date: August 27, 2015
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Thibaut Desrues, Sylvain De Vecchi, Fabien Ozanne, Florent Souche
  • Publication number: 20140373919
    Abstract: A photovoltaic cell including a semiconductor substrate of a first conductivity type provided with a main surface, a first layer made from amorphous semiconductor material of first conductivity type in contact with the main surface of the substrate, a first electric contact formed on the first amorphous layer, a second layer of amorphous semiconductor material of a second conductivity type in contact with the main surface of the substrate, a second electric contact formed on the second amorphous layer and an electrically insulating layer, a cell wherein the electrically insulating layer is formed completely on the first amorphous layer and the first and second contacts extend on the electrically insulating layer.
    Type: Application
    Filed: January 3, 2013
    Publication date: December 25, 2014
    Inventors: Thibaut Desrues, Sylvain De Vecchi, Florent Souche
  • Patent number: 8723023
    Abstract: A photovoltaic device which includes: a) a substrate based on a crystalline semi-conductor material; b) a first electrode which includes at least one heterojunction made on one face, referred to as the rear face, of the substrate, where this heterojunction includes a layer based on a doped amorphous semi-conductor material; and c) a second electrode. The first and second electrodes are arranged on the rear face of the substrate according to an interdigitated combs design, and where the layer includes multiple portions of the doped amorphous semi-conductor material which are unconnected and spaced apart from each other.
    Type: Grant
    Filed: March 26, 2008
    Date of Patent: May 13, 2014
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Armand Bettinelli, Thibaut Desrues
  • Publication number: 20100032014
    Abstract: A photovoltaic device which includes: a) a substrate based on a crystalline semi-conductor material; b) a first electrode which includes at least one heterojunction made on one face, referred to as the rear face, of the substrate, where this heterojunction includes a layer based on a doped amorphous semi-conductor material; and c) a second electrode. The first and second electrodes are arranged on the rear face of the substrate according to an interdigitated combs design, and where the layer includes multiple portions of the doped amorphous semi-conductor material which are unconnected and spaced apart from each other.
    Type: Application
    Filed: March 26, 2008
    Publication date: February 11, 2010
    Applicant: Commissariat A L'Energie Atomique
    Inventors: Armand Bettinelli, Thibaut Desrues