Patents by Inventor Thierry Caillat
Thierry Caillat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9722163Abstract: A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.Type: GrantFiled: June 7, 2013Date of Patent: August 1, 2017Assignee: California Institute of TechnologyInventors: Samad A. Firdosy, Billy Chun-Yip Li, Vilupanur A. Ravi, Jean-Pierre Fleurial, Thierry Caillat, Harut Anjunyan
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Publication number: 20170194546Abstract: The present invention provides a thermoelectric device. The thermoelectric device includes an interconnect layer, a skutterudite layer, and a metallization stack. The metallization stack, having a diffusion layer, is disposed between and in electrical contact with the interconnect layer and the skutterudite layer of the thermoelectric device. The present invention also provides a method of preparing an SKD thermocouple. The present invention also provides a method of preparing a braze joint.Type: ApplicationFiled: January 4, 2017Publication date: July 6, 2017Applicant: California Institute of TechnologyInventors: Samad A. Fidrosy, Jong-Ah Paik, Kevin L. Smith, Billy Chun-Yip Li, Su C. Chi, Kevin Yu, Jean-Pierre Fleurial, David M. Uhl, Thierry Caillat, George H. Nakasukasa, Vilapanur A. Ravi
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Publication number: 20170077379Abstract: A thermoelectric power generation technique is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.Type: ApplicationFiled: November 21, 2016Publication date: March 16, 2017Applicant: California Institute of TechnologyInventors: Samad A. Firdosy, Billy Chun-Yip Li, Vilupanur A. Ravi, Jean-Pierre Fleurial, Thierry Caillat, Harut Anjunyan
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Publication number: 20150357541Abstract: A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.Type: ApplicationFiled: June 7, 2013Publication date: December 10, 2015Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGYInventors: Samad A. Firdosy, Billy Chun-Yip Li, Vilupanur A. Ravi, Jean-Pierre Fleurial, Thierry Caillat, Harut Anjunyan
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Patent number: 8791353Abstract: Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb14MnSb11. The alumina may be applied as an adhesive paste dried and cured on a substantially oxide free surface of the Zintl thermoelectric material and polished to a final thickness. The sublimation suppression barrier may be finalized by baking out the alumina layer on the Zintl thermoelectric material until it becomes substantially clogged with ytterbia.Type: GrantFiled: March 12, 2010Date of Patent: July 29, 2014Assignee: California Institute of TechnologyInventors: Jong-Ah Paik, Thierry Caillat
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Publication number: 20120006376Abstract: A thermally stable diffusion barrier for bonding skutterudite-based materials with metal contacts is disclosed. The diffusion barrier may be employed to inhibit solid-state diffusion between the metal contacts, e.g. titanium (Ti), nickel (Ni), copper (Cu), palladium (Pd) or other suitable metal electrical contacts, and a skutterudite thermoelectric material including a diffusible element, such as antimony (Sb), phosphorous (P) or arsenic (As), e.g. n-type CoSb3 or p-type CeFe4?xCoxSb12 where the diffusible element is Sb, to slow degradation of the mechanical and electrical characteristics of the device. The diffusion barrier may be employed to bond metal contacts to thermoelectric materials for various power generation applications operating at high temperatures (e.g. 673 K or above). Some exemplary diffusion barrier materials have been identified such as zirconium (Zr), hafnium (Hf), and yttrium (Y).Type: ApplicationFiled: June 15, 2011Publication date: January 12, 2012Applicant: California Institute of TechnologyInventors: JEAN-PIERRE FLEURIAL, Thierry Caillat, Su Chih Chi
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Publication number: 20100243018Abstract: A thermoelectric power generation device using molybdenum metallization to a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000° C., is disclosed. The Zintl thermoelectric material may comprise Yb14MnSb11. A thin molybdenum metallization layer of approximately 5 microns or less may be employed. The thin molybdenum layer may be applied in a foil under high pressure, e.g. 1800 psi, at high temperature, e.g. 1000° C. The metallization layer may then be bonded or brazed to other components, such as heat collectors or current carrying electrodes, of the thermoelectric power generation device.Type: ApplicationFiled: March 29, 2010Publication date: September 30, 2010Applicant: California Institute of TechnologyInventors: Billy Chun-Yip Li, Erik J. Brandon, Vilupanur A. Ravi, Thierry Caillat, Richard C. Ewell, Samad A. Firdosy, Jeff S. Sakamoto
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Publication number: 20100229910Abstract: Alumina as a sublimation suppression barrier for a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000K, is disclosed. The Zintl thermoelectric material may comprise Yb14MnSb11. The alumina may be applied as an adhesive paste dried and cured on a substantially oxide free surface of the Zintl thermoelectric material and polished to a final thickness. The sublimation suppression barrier may be finalized by baking out the alumina layer on the Zintl thermoelectric material until it becomes substantially clogged with ytterbia.Type: ApplicationFiled: March 12, 2010Publication date: September 16, 2010Applicant: California Institute of TechnologyInventors: Jong-Ah Paik, Thierry Caillat
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Patent number: 7480984Abstract: A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.Type: GrantFiled: June 7, 2004Date of Patent: January 27, 2009Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Jeffrey S. Sakamoto, Thierry Caillat, Jean-Pierre Fleurial, G. Jeffrey Snyder
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Patent number: 6942728Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4?xAxSb3?yBy wherein 0?x?4, A is a transition metal, B is a pnicogen, and 0?y?3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: GrantFiled: October 1, 2002Date of Patent: September 13, 2005Assignee: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Patent number: 6787691Abstract: A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.Type: GrantFiled: May 14, 2002Date of Patent: September 7, 2004Assignee: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Margaret A. Ryan, Alex Borshchevsky, Wayne Phillips, Elizabeth A. Kolawa, G. Jeffrey Snyder, Thierry Caillat, Thorsten Kascich, Peter Mueller
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Patent number: 6673996Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.Type: GrantFiled: May 1, 2002Date of Patent: January 6, 2004Assignee: California Institute of TechnologyInventors: Thierry Caillat, Andrew Zoltan, Leslie Zoltan, Jeffrey Snyder
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Patent number: 6660926Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.Type: GrantFiled: November 6, 2001Date of Patent: December 9, 2003Assignees: General Motors Corporation, California Institute of TechnologyInventors: Jean-Pierre Fleurial, Alex Borshchevsky, Thierry Caillat, Donald T. Morelli, Gregory P. Meisner
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Patent number: 6563039Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.Type: GrantFiled: January 17, 2001Date of Patent: May 13, 2003Assignee: California Institute of TechnologyInventors: Thierry Caillat, Jean-Pierre Fleurial, Alexander Borshchevsky, G. Jeffrey Snyder, Andrew Zoltan, Leslie Zoltan
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Publication number: 20030066476Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4-xAxSb3-yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: ApplicationFiled: October 1, 2002Publication date: April 10, 2003Applicant: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial
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Publication number: 20030041892Abstract: A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.Type: ApplicationFiled: May 14, 2002Publication date: March 6, 2003Applicant: California Institute of TechnologyInventors: Jean-Pierre Fleurial, Margaret A. Ryan, Alex Borshchevsky, Wayne Phillips, Elizabeth A. Kolawa, G. Jeffrey Snyder, Thierry Caillat, Thorsten Kascich, Peter Mueller
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Publication number: 20020189661Abstract: A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.Type: ApplicationFiled: May 1, 2002Publication date: December 19, 2002Inventors: Thierry Caillat, Andrew Zoltan, Leslie Zoltan, Jeffrey Snyder
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Publication number: 20020175312Abstract: Chevrel phase materials are used as thermoelectric materials. The Chevrel phase materials are formed as units, and the units include voids between the units. Those voids may be filled with filling elements. The filling elements can be large elements such as lead, or smaller elements such as metals. Exemplary metals may include Cu, Ti, and/or Fe. Different Chevrel phase materials are discussed, including Mo based Chevrel phase materials and Re based Chevrel phase materials.Type: ApplicationFiled: July 11, 2001Publication date: November 28, 2002Inventors: Jean-Pierre Fleurial, G. Jeffrey Snyder, Alexander Borshchevsky, Thierry Caillat
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Publication number: 20020176815Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.Type: ApplicationFiled: November 6, 2001Publication date: November 28, 2002Applicant: General Motors Corporation, a Delaware corporationInventors: Jean-Pierre Fleurial, Alex Borshchevsky, Thierry Caillat, Donald T. Morelli, Gregory P. Meisner
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Patent number: 6458319Abstract: The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.Type: GrantFiled: March 18, 1997Date of Patent: October 1, 2002Assignee: California Institute of TechnologyInventors: Thierry Caillat, Alexander Borshchevsky, Jean-Pierre Fleurial