Patents by Inventor Thierry SALVETAT

Thierry SALVETAT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220298007
    Abstract: A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.
    Type: Application
    Filed: August 18, 2020
    Publication date: September 22, 2022
    Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, SOITEC
    Inventors: Thierry SALVETAT, Bruno GHYSELEN, Lamine BENAISSA, Caroline COUTIER, Gweltaz GAUDIN
  • Patent number: 11401162
    Abstract: A process for transferring a useful layer to a carrier substrate including a first surface is provided, the process including the steps of: providing a donor substrate including a first surface, a weakened zone including implanted species, the useful layer, which is bounded by the weakened zone and by the first surface of the donor substrate, and an amorphous zone disposed, in the useful layer, parallel to the weakened zone; assembling, on a side of the first surface of the donor substrate and on a side of the first surface of the carrier substrate, the donor substrate with the carrier substrate by bonding, such that the amorphous zone is at least partially facing at least one cavity that is partially bounded by the first surface of the donor substrate; and splitting the donor substrate along the weakened zone so as to reveal the useful layer.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: August 2, 2022
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Lamine Benaissa, Thierry Salvetat
  • Publication number: 20220068714
    Abstract: The invention relates to a method for transferring a semiconductor layer (2) from a donor substrate (1) comprising a weakening plane (F) to a receiver substrate (3) comprising a bonding face (4) that has open cavities (C). This method comprises the implementation, by putting the donor substrate and the bonding face of the receiver substrate in contact, of an assembly wherein said cavities are buried and the separation of the assembly by fracture along the weakening plane. The bonding face of the receiver substrate includes, apart from the open cavities, a bonding surface that comes into contact with the donor substrate when the assembly is implemented. Said bonding surface comprising a region devoid of cavities (5, 6) one dimension of which is at least 100 ?m and which has a surface area of at least 1 mm2, and an intercavity space that occupies from 15 to 50% of the bonding face of the receiver substrate.
    Type: Application
    Filed: August 20, 2021
    Publication date: March 3, 2022
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Thierry SALVETAT, Guillaume BERRE
  • Publication number: 20210287933
    Abstract: The invention relates to a method for transferring a semiconductor layer from a donor substrate to a receiver substrate having an open cavity, comprising the steps of forming an embrittlement plane in the donor substrate, making, by bringing the donor substrate and the receiver substrate into contact, a packaging in which said cavity is buried, and separating the packaging by fracturing along the embrittlement plane, said separating causing a transfer of the semiconductor layer to the receiver substrate and a sealing of the cavity by the semiconductor layer. This method comprises, prior to making the packaging, a step of implanting diffusing species into the donor substrate or into the receiver substrate and, subsequently to making the packaging and prior to separating the packaging, a step of diffusing said species into the cavity.
    Type: Application
    Filed: March 5, 2021
    Publication date: September 16, 2021
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Guillaume BERRE, Frédéric MAZEN, Thierry SALVETAT, François RIEUTORD
  • Publication number: 20190202688
    Abstract: A process for transferring a useful layer to a carrier substrate including a first surface is provided, the process including the steps of: providing a donor substrate including a first surface, a weakened zone including implanted species, the useful layer, which is bounded by the weakened zone and by the first surface of the donor substrate, and an amorphous zone disposed, in the useful layer, parallel to the weakened zone; assembling, on a side of the first surface of the donor substrate and on a side of the first surface of the carrier substrate, the donor substrate with the carrier substrate by bonding, such that the amorphous zone is at least partially facing at least one cavity that is partially bounded by the first surface of the donor substrate; and splitting the donor substrate along the weakened zone so as to reveal the useful layer.
    Type: Application
    Filed: December 18, 2018
    Publication date: July 4, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Lamine BENAISSA, Thierry SALVETAT