Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.

Abstract: A hand tool includes a handle section, a working end operably coupled to the handle section, and a jaw assembly disposed at the working end. The jaw assembly includes a movable jaw and a fixed jaw. A span defined between the movable jaw and the fixed jaw is adjustable. Each of the movable jaw and the fixed jaw includes an array of teeth defined by ridges that extend substantially parallel to each other. The array of teeth on each of the fixed jaw and the movable jaw includes a first set of teeth having a first width and a first depth, and a second set of teeth having a second width and a second depth. The first depth is less than the second depth and the first width is less than the second width.

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

Abstract: Described examples include a method having steps of forming an isolation pad oxide layer on a substrate and forming and patterning a silicon nitride layer on the isolation pad oxide layer. The method also has steps of oxidizing portions of the substrate not covered by the silicon nitride layer to form a LOCOS layer and oxidizing the silicon nitride layer in an oxidizing ambient containing a chlorine source to form a silicon dioxide layer.

Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.

Abstract: A sensing device for monitoring electromagnetic radiation emanating from a plasma processing system. The sensing device may, for example, comprise at least two of a first probe for detecting a time varying RF electric field, a second probe for detecting a time varying RF magnetic field, and an optical probe for detecting the modulated light emission. The sensing device may, for example, further comprise a signal processing unit configured to receive a signal from each probe and to monitor the electromagnetic radiation with respect to only a single frequency of each signal.

Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.

Abstract: A semiconductor device including a first dielectric layer and a second dielectric layer is formed by forming an inhibitor layer over a semiconductor material. The inhibitor layer includes at least silicon and nitrogen. The semiconductor material is heated in an oxygen-containing ambient which oxidizes the inhibitor layer and forms the first dielectric layer which includes the oxidized inhibitor layer, and oxidizes the semiconductor material to form the second dielectric layer. The second dielectric layer is thicker than, the first dielectric layer. The first dielectric layer and the second dielectric layer each include at least 90 weight percent silicon dioxide and less than 1 weight percent nitrogen. The first dielectric layer and the second dielectric layer may be used to form gate dielectric layers for a first MOS transistor and a second MOS transistor that operates at a higher voltage than the first MOS transistor.

Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.

Abstract: A method of process control for a batch process includes pre-measuring a monitor lot to obtain pre-metrology data regarding at least a first process parameter. There are no product units included with the monitor lot. The pre-metrology data is saved together with an identifier for the first monitor unit. A batch is staged for the batch process including at least a first product lot including a plurality of product units together with the first monitor unit. The batch is batch processed through the batch process. After the batch processing, the first monitor unit is measured to obtain post-metrology data for the first process parameter. At least one of the post-metrology data and a difference between the post-metrology data and pre-metrology data is saved to a data file with an identifier for the first product lot or the pre-metrology data and post-metrology data is directly written to the first product lot.

Abstract: A method of process control for a batch process includes pre-measuring a monitor lot to obtain pre-metrology data regarding at least a first process parameter. There are no product units included with the monitor lot. The pre-metrology data is saved together with an identifier for the first monitor unit. A batch is staged for the batch process including at least a first product lot including a plurality of product units together with the first monitor unit. The batch is batch processed through the batch process. After the batch processing, the first monitor unit is measured to obtain post-metrology data for the first process parameter. At least one of the post-metrology data and a difference between the post-metrology data and pre-metrology data is saved to a data file with an identifier for the first product lot or the pre-metrology data and post-metrology data is directly written to the first product lot.

Abstract: The present invention provides compounds of the following structure; A-L1-B—C-D that are useful for treating or preventing conditions or disorders associated with DGAT1 activity in animals, particularly humans.

Abstract: Compounds of Formula (IA) wherein R1, R2, R3, R4 and R5 are as defined herein for Formula (IA), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.

Abstract: Compounds of Formula (IA) wherein R1, R2, R3, R4 and R5 are as defined herein for Formula (IA), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.

Abstract: The present invention provides compounds of the following structure; A-L1-B-C-D that are useful for treating or preventing conditions or disorders associated with DGAT1 activity in animals, particularly humans.

Abstract: Compounds of Formula (IA) and Formula (IB) wherein R1, R2, R3, R4, R5, and R6 are as defined herein for Formula (IA) or Formula (IB), or a tautomer, prodrug, solvate, or salt thereof; pharmaceutical compositions containing such compounds, and methods of modulating the glucocorticoid receptor function and methods of treating disease-states or conditions mediated by the glucocorticoid receptor function or characterized by inflammatory, allergic, or proliferative processes in a patient using these compounds.

Abstract: A drive unit for use with a vibration welder having first and second electromagnets, each having first and second terminals, and being operable to reciprocate a vibration platen, includes phase U, V, and W drive circuitry and control circuitry. The phase U drive circuitry is coupled to the first terminal of the first electromagnet. The phase V drive circuitry is coupled to the first terminal of the second electromagnet. The phase W drive circuitry is coupled to the second terminals of the first and second electromagnets. The control circuitry is operable to control the phase U, V, and W drive circuitry to generate a first drive signal for energizing the first electromagnet and a second drive signal for energizing the second electromagnet.

Abstract: The present invention relates to a method and apparatus for a two-piece box construction which is a continuous, in-line process in which a pair of panels or blanks are fed simultaneously from one end of the apparatus and move along a substantially linear path through the apparatus where they are joined together so that upon exit from such apparatus the joined blanks can be fed directly, in line, into a conventional folder/gluer apparatus for final folding, gluing and other processing.

Abstract: Disclosed are novel aromatic compounds which are useful for treating diseases or pathological conditions involving inflammation such as chronic inflammatory diseases. Also disclosed are pharmaceutical compositions containing and processes of making such compounds.