Abstract: A programmable metallization memory cell with a storage region (3) formed from a chalcogenide glass and an electrode (4) which is preferably silver is located at the crossing point of a respective bit line (1) and a respective word line (2). There is a pn junction between the bit lines (1) and the chalcogenide glass.

Abstract: A switching device to be reversibly switched between an electrically isolating off-state and an electrically conducting on-state for use in, e.g., a reconfigurable interconnect. The device includes two separate electrodes, one of which being a reactive metal electrode and the other one being an inert electrode, and a solid state electrolyte arranged between the electrodes and being capable of electrically isolating the electrodes to define the off-state. The reactive metal electrode and the solid state electrolyte also being capable of forming a redox-system having a minimum voltage (turn-on voltage) to start a redox-reaction, which results in generating metal ions that are released into the solid state electrolyte. The metal ions are reduced to increase a metal concentration within the solid state electrolyte, wherein an increase of the metal concentration results in a conductive metallic connection bridging the electrodes to define the on-state.