Abstract: A nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface is described. A process for preparing the nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface, which hydroxides and oxygen vacancies can participate in chemical reactions, which composition is prepared by a method selected from the group of methods comprising: i) controlled thermally induced dehydroxylation of nanostructured metal hydroxide precursors; ii) thermochemical reaction of said nanostructured metal oxide with hydrogen gas; iii) vacuum thermal treatment of said nanostructured metal oxide; and iv) aliovalent doping with a lower oxidation state metal.

Abstract: A nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface is described. A process for preparing the nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface, which hydroxides and oxygen vacancies can participate in chemical reactions, which composition is prepared by a method selected from the group of methods comprising: i) controlled thermally induced dehydroxylation of nanostructured metal hydroxide precursors; ii) thermochemical reaction of said nanostructured metal oxide with hydrogen gas; iii) vacuum thermal treatment of said nanostructured metal oxide; and iv) aliovalent doping with a lower oxidation state metal.

Abstract: A nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface is described. A process for preparing the nanostructured metal oxide composition comprising hydroxides or oxygen vacancies or both hydroxides and oxygen vacancies on its surface, which hydroxides and oxygen vacancies can participate in chemical reactions, which composition is prepared by a method selected from the group of methods comprising: i) controlled thermally induced dehydroxylation of nanostructured metal hydroxide precursors; ii) thermochemical reaction of said nanostructured metal oxide with hydrogen gas; iii) vacuum thermal treatment of said nanostructured metal oxide; and iv) aliovalent doping with a lower oxidation state metal.

Abstract: A processing device for providing radar data onto a local area network includes an analog-to-digital converter operable to receive analog radar data from an antenna and converter operable to convert the analog radar data into digital radar data. An interference rejector removes radar signals of other antennas from the digital radar data. A range bin decimator limits the digital radar data to a threshold number of range bins. A trigger-to-azimuth converter associates the digital radar data to particular azimuths of rotation of the antenna. A local area network manager places the digital radar data onto a local area network. The processing device may be located in the pedestal with the antenna. A plurality of processing devices associated with a plurality of antennas may provide digital radar data onto the local area network.

Abstract: A processing device for providing radar data onto a local area network includes an analog-to-digital converter operable to receive analog radar data from an antenna and converter operable to convert the analog radar data into digital radar data. An interference rejector removes radar signals of other antennas from the digital radar data. A range bin decimator limits the digital radar data to a threshold number of range bins. A trigger-to-azimuth converter associates the digital radar data to particular azimuths of rotation of the antenna. A local area network manager places the digital radar data onto a local area network. The processing device may be located in the pedestal with the antenna. A plurality of processing devices associated with a plurality of antennas may provide digital radar data onto the local area network.

Abstract: A curable slurry for forming ceramic microstructures on a substrate using a mold. The slurry is a mixture of a ceramic powder, a fugitive binder, and a diluent. The ceramic powder has a low softening temperature in a range of about 400° C. to 600° C. and a coefficient of thermal expansion closely matched to that of the substrate. The fugitive binder is capable of radiation curing, electron beam curing, or thermal curing. The diluent promotes release properties with the mold after curing the binder or quick and complete burn out of the binder during debinding.

Abstract: A curable slurry for forming ceramic microstructures on a substrate using a mold. The slurry is a mixture of a ceramic powder, a fugitive binder, and a diluent. The ceramic powder has a low softening temperature in a range of about 400° C. to 600° C. and a coefficient of thermal expansion closely matched to that of the substrate. The fugitive binder is capable of radiation curing, electron beam curing, or thermal curing. The diluent promotes release properties with the mold after curing the binder or quick and complete burn out of the binder during debinding.

Abstract: A curable slurry for forming ceramic microstructures on a substrate using a mold. The slurry is a mixture of a ceramic powder, a fugitive binder, and a diluent. The ceramic powder has a low softening temperature in a range of about 400° C. to 600° C. and a coefficient of thermal expansion closely matched to that of the substrate. The fugitive binder is capable of radiation curing, electron beam curing, or thermal curing. The diluent promotes release properties with the mold after curing the binder or quick and complete burn out of the binder during debinding.