Patents by Inventor Thomas G. Coleman

Thomas G. Coleman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7326583
    Abstract: Methods of packaging a semiconductor light emitting device in a reflector having a moat positioned between a lower and an upper sidewall thereof, the upper and lower sidewall defining a reflective cavity, include dispensing encapsulant material into the reflective cavity including the light emitting device therein to cover the light emitting device and to form a convex meniscus of encapsulant material in the reflective cavity extending from an edge of the moat without contacting the upper sidewall of the reflector. The encapsulant material in the reflective cavity is cured. Packaged semiconductor light emitting devices and reflectors for the same are also provided.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: February 5, 2008
    Assignee: Cree, Inc.
    Inventors: Peter Andrews, Thomas G. Coleman, James Ibbetson, Michael Leung, Gerald H. Negley, Eric Tarsa
  • Patent number: 7279346
    Abstract: Methods of packaging a semiconductor light emitting device positioned in a reflective cavity are provided. A first quantity of encapsulant material is dispensed into the reflective cavity including the light emitting device therein and the first quantity of encapsulant in the reflective cavity is cured. A second quantity of encapsulant material is dispensed onto the cured first quantity of encapsulant material. A lens is positioned in the reflective cavity on the dispensed second quantity of encapsulant material. The dispensed second quantity of encapsulant material is cured to attach the lens in the reflective cavity.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: October 9, 2007
    Assignee: Cree, Inc.
    Inventors: Peter Andrews, Thomas G. Coleman, James Ibbetson, Michael Leung, Gerald H. Negley, Eric Tarsa
  • Patent number: 6749685
    Abstract: Methods of growing silicon carbide are provided in which an electric arc is used to sublime a silicon carbide source material. In these embodiments, a silicon carbide seed crystal is introduced into a sublimation system, along with first and second electrodes that are separated by a gap. A power supply is coupled to at least one of the electrodes and used to create an electric arc across the gap between the two electrodes. This electric arc is used to sublime at least a portion of a silicon carbide source material. The vaporized silicon carbide material may then be encouraged to condense onto a seed material to produce monocrystalline or polycrystalline silicon carbide. In embodiments of the present invention, at least one of the electrodes is comprised of silicon carbide and serves as the silicon carbide source material.
    Type: Grant
    Filed: August 16, 2001
    Date of Patent: June 15, 2004
    Assignee: Cree, Inc.
    Inventor: Thomas G. Coleman
  • Publication number: 20030033976
    Abstract: Methods of growing silicon carbide are provided in which an electric arc is used to sublime a silicon carbide source material. In these embodiments, a silicon carbide seed crystal is introduced into a sublimation system, along with first and second electrodes that are separated by a gap. A power supply is coupled to at least one of the electrodes and used to create an electric arc across the gap between the two electrodes. This electric arc is used to sublime at least a portion of a silicon carbide source material. The vaporized silicon carbide material may then be encouraged to condense onto a seed material to produce monocrystalline or polycrystalline silicon carbide. In embodiments of the present invention, at least one of the electrodes is comprised of silicon carbide and serves as the silicon carbide source material.
    Type: Application
    Filed: August 16, 2001
    Publication date: February 20, 2003
    Inventor: Thomas G. Coleman
  • Patent number: 5955735
    Abstract: A target gemstone is irradiated with ultraviolet energy while sensing the electrical potential across the gemstone. A silicon carbide gemstone will generate an electrical potential and, therefore, can be positively identified, as distinct from other gemstones such as diamond and cubic zirconia that do not produce a potential.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: September 21, 1999
    Assignee: C3, Inc.
    Inventor: Thomas G. Coleman
  • Patent number: 5921895
    Abstract: A martial arts striking device using a pair of spaced and heavy duty spring assemblies with a top bracket having a centered opening for receiving an upright post supporting a resilient striking bag. The lower ends of the spring assemblies are secured to a bottom bracket, which is fastened to a firm footing such as a floor. The wire making up the springs are of such a diameter that the springs have a low spring constant, meaning the springs are highly resistive to impacts against the bag and will return to an upright position without undue oscillation.
    Type: Grant
    Filed: January 30, 1998
    Date of Patent: July 13, 1999
    Inventors: John R. Lynch, Thomas G. Coleman
  • Patent number: 5882786
    Abstract: Synthetic gemstones are produced by growing single crystals of silicon carbide, fashioning the silicon carbide into gemstone cores, and thereafter depositing a thin coating of diamond on the core.
    Type: Grant
    Filed: November 15, 1996
    Date of Patent: March 16, 1999
    Assignee: C3, Inc.
    Inventors: Kurt Nassau, Thomas G. Coleman, Charles Eric Hunter
  • Patent number: 5155062
    Abstract: A method and apparatus for substantially preventing undesired residual dopants or other impurities from becoming incorporated in growing epitaxial layers of silicon carbide during CVD by avoiding the use of a susceptor for CVD epitaxial growth is disclosed. During the CVD process, the substrate is suspended substantially out of physical contact with any other solid object while a suitable surface of the semiconductor substrate is contacted with source gases that will form epitaxial layers of silicon carbide thereon. Heating during the CVD process is performed, according to the present invention, by inductively heating the substrate using an induction frequency to which the substrate material is sufficiently responsive to heat the substrate to the temperatures required for CVD of silicon carbide.
    Type: Grant
    Filed: December 20, 1990
    Date of Patent: October 13, 1992
    Assignee: Cree Research, Inc.
    Inventor: Thomas G. Coleman
  • Patent number: 5119540
    Abstract: The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.
    Type: Grant
    Filed: July 24, 1990
    Date of Patent: June 9, 1992
    Assignee: Cree Research, Inc.
    Inventors: Hua-Shuang Kong, Thomas G. Coleman, Calvin H. Carter, Jr.