Abstract: The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Abstract: The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.

Abstract: A planarization composition is set forth for chemical mechanical planarization of dielectric layers for semiconductor manufacture. The composition comprises spherical silica particles having an average diameter of from 30 nm to about 400 nm, and a narrow range of particle sizes, wherein about 90% of the particles is within 20% of the average particle diameter. The composition includes a liquid carrier comprising up to about 9% alcohol and an amine hydroxide in the amount of about 0.2 to about 9% by weight. The pH of the composition is in the range of about 9 to about 11.5, and the remainder of the solution is water. The composition has low amounts of metal ions, and the composition is used for thinning, polishing and planarizing interlayer dielectric thin films, shallow trench isolation structures, and isolation of gate structures. The invention also comprises methods for using the planarization composition in the manufacture of semiconductor devices.

Abstract: A planarization composition is set forth in accordance with an embodiment of the invention. The composition comprises spherical silica particles having a weight average particle diameter which falls within the range from about 0.03&mgr; to about 2&mgr; and is monodisperse in that at least about 90 weight percent of the particles have a variation in particle diameter from the average particle diameter of no more than about ±20%. A liquid carrier comprising up to 20 weight percent ROH, and an amine hydroxide which is NR4OH or NR2NR3OH, where each R is HCH3, CH2CH3, C3H7 or C4H9, in the amount of 0.1 to 10 weight percent; an oxidizer which is in the amount from about 0.5% to 15% weight percent; an acid stabilizer for adjusting the pH to fall within a range from about 7.0 to about 0.5; and the remainder is water. The invention also relates to a thinning, polishing and planarizing apparatus and to a method for carrying out the thinning, polishing and planarizing operation.

Abstract: A planarization composition is set forth in accordance with an embodiment of the invention. The composition comprises spherical silica particles having a weight average particle diameter which falls within the range from about 0.03.mu. to about 2.mu. and is mono-disperse in that at least about 90 weight percent of the particles have a variation in particle diameter from the average particle diameter of no more than about .+-.20%. A liquid carrier comprising up to 20 weight percent ROH, and an amine hydroxide which is NR.sub.4 OH or NR.sub.2 NR.sub.3 OH, where each R is HCH.sub.3, CH.sub.2 CH.sub.3, C.sub.3 H.sub.7 or C.sub.4 H.sub.9, in the amount of 0.1 to 10 weight percent; an oxidizer which is in the amount from about 0.5% to 15% weight percent; an acid stabilizer for adjusting the pH to fall within a range from about 7.0 to about 0.5; and the remainder is water.

Abstract: A wafer stripping, cleaning and etching apparatus includes a bowl, a table in the bowl carrying cassette of wafers, and a spray post with multiple fluid passages and ports directing fluid spray against the wafers.

Abstract: A method is set forth of treating a surface of an object to remove impurities. The object is positioned within a treating chamber with the surface exposed. Ammonia vapor is contacted with water vapor and/or hydrogen peroxide vapor adjacent to the surface to provide a hot mixture comprising at least ammonia and ammonium hydroxide. The hot mixture is impinged on the surface. The contacting is immediately prior to and/or simultaneous with the impinging. Resist is quickly stripped from the surfaces of semiconductors by this method. And, the stripping is very complete. Group I and Group II metals are also removed.

Abstract: A method is set forth of treating the surface of an object such as a semiconductor wafer to remove impurities. In particular, the method serves to strip resist in a short period of time, of the order of 30 seconds. The object is positioned with the surface exposed within a treating chamber. Water vapor is contacted with sulfur trioxide vapor adjacent the surface to provide a hot mixture comprising sulfur trioxide, water and sulfuric acid. The hot mixture is impinged onto the surface. The contacting is immediately prior to and/or simultaneous with the impinging. Photoresist is quickly and efficiently removed in accordance with this process. Energy requirements are relatively low since the components are easily vaporized.

Abstract: A surface of an object, e.g., a semiconductor wafer, is treated to remove impurities, including those in microrecesses having minimum dimensions of ten microns or less. The object is positioned in a sealed chamber which has a limited number of potential spaceborne nucleation centers and is at a treating temperature, T. A condensable solvent is introduced into the chamber until its pressure is close to but below its vapor pressure at the temperature, T. This condition is maintained until a plurality of molecular layers of the solvent is adsorbed in the microrecesses. Then, the pressure of the solvent is increased to at least unity whereat it condenses in the microrecesses. Impurities can be removed from the microrecesses in this manner thus improving product quality.