Abstract: Three-dimensional (3D) memory structures and methods of formation of same are provided herein. In some embodiments, a 3D memory fabrication structure includes: a base silicon (Si) layer; a silicon germanium (SiGe) layer disposed above the base Si layer; and a doped silicon (Si) layer disposed on at least one side of the SiGe layer, wherein the doped Si layer contains a dopant that is at least one of carbon (C) or boron (B).

Abstract: A semiconductor device and a method for manufacturing thereof. A substrate is provided. One or more groups of layers are formed on top of the substrate. A compensation layer is formed on top of at least one group of layers. At least one silicon layer is formed on top of the compensation layer. At least a portion of one or more layers in the one or more groups of layers is etched. The semiconductor device is formed.

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

Abstract: Three-dimensional dynamic random-access memory (3D DRAM) structures and methods of formation of same are provided herein. In some embodiments, a 3D DRAM stack can include alternating silicon (Si) layers and silicon germanium (SiGe) layers. Each of the Si layers may have a height greater than a height of each of the SiGe layers. Methods and systems for formation of such structures are further provided.

Abstract: The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.