Patents by Inventor Thomas L. Crandell

Thomas L. Crandell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High frequency analog transistors, method of fabrication and circuit implementation
    Patent number: 5892264
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: January 21, 1997
    Date of Patent: April 6, 1999
    Assignee: Harris Corporation
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli
  • High frequency analog transistors method of fabrication and circuit implementation
    Patent number: 5807780
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: September 15, 1998
    Assignee: Harris Corporation
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli
  • High frequency analog transistors, method of fabrication and circuit implementation
    Patent number: 5668397
    Abstract: A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.
    Type: Grant
    Filed: October 4, 1993
    Date of Patent: September 16, 1997
    Assignee: Harris Corp.
    Inventors: Christopher K. Davis, George Bajor, James D. Beasom, Thomas L. Crandell, Taewon Jung, Anthony L. Rivoli