Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.

Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.

Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.

Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.

Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi monovacancy defect in silicon carbide, as well as quantum memory devices and methods for creation of quantum memory using the spin states of a VSi monovacancy defect in silicon carbide.

Abstract: New alloys of Group VI transition metal dichalcogenides having the chemical formula MX2-xX?x, produced using a chalcogen-substitution approach, wherein M is a Group VI transition metal (Cr, Mo, W, or Sg); X is a chalcogen (O, S, Se, Te, or Po); and X? is a group 15 (N, P, As, Sb, or Bi) or a group 17 (F. Cl, Br, I, or At); and where x ranges from 0 to 2. The stability of different structural phases of such MX2-xX?x Group VI 2D TMD alloy materials can be tuned via the choice of the chalcogen used. The MX2-xX?x Group VI 2D TMD alloy materials produced in accordance with the chalcogen-substitution approach of the present invention can be used as components of phase-change based devices such as memory elements, field-effect transistors (FETs), or gas sensors.

Abstract: High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.

Abstract: Devices and methods for the detection of magnetic fields, strain, and temperature using the spin states of a VSi? monovacancy defect in silicon carbide are provided. Also provided are quantum memory devices and methods for creation of quantum memory using the spin states of a VSi? monovacancy defect in silicon carbide.