Patents by Inventor Thomas Novet
Thomas Novet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8573741Abstract: A fluid-ejection assembly includes a die, a substrate, ribs, and adhesive. The die has nozzles through which fluid is ejected. The substrate provides the fluid to the die. The ribs are within the substrate, and have rounded corners. The rounded corners are adapted to provide a predetermined characteristic. The adhesive affixes the die to the substrate.Type: GrantFiled: October 30, 2009Date of Patent: November 5, 2013Assignee: Hewlett-Packard Development Company, L.P.Inventors: Alok Sharan, Thomas Novet, Daniel W. Petersen, John Breen
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Publication number: 20110102509Abstract: A fluid-ejection assembly includes a die, a substrate, ribs, and adhesive. The die has nozzles through which fluid is ejected. The substrate provides the fluid to the die. The ribs are within the substrate, and have rounded corners. The rounded corners are adapted to provide a predetermined characteristic. The adhesive affixes the die to the substrate.Type: ApplicationFiled: October 30, 2009Publication date: May 5, 2011Inventors: Alok Sharan, Thomas Novet, Daniel W. Petersen, John Breen
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Patent number: 7149155Abstract: A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar channels to realize the memory cells. The filler material of each memory cell has at least a first configuration and a second configuration. The first configuration corresponds to a first storable logical value, and the second configuration corresponds to a second storable logical value.Type: GrantFiled: September 20, 2002Date of Patent: December 12, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: David M. Schut, Alexander Govyadinov, Thomas Novet, Paul H McClelland
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Patent number: 7049158Abstract: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.Type: GrantFiled: October 15, 2003Date of Patent: May 23, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
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Patent number: 7044823Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: GrantFiled: May 18, 2004Date of Patent: May 16, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Michael J. Regan, Brian E Bolf, Thomas Novet, Paul J. Benning, Mark Alan Johnstone, Sriram Ramamoorthi
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Patent number: 6933517Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.Type: GrantFiled: October 15, 2003Date of Patent: August 23, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
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Publication number: 20050157562Abstract: A tip, connected to a metal chip component, for forming readable changes in a memory storage system is disclosed. The tip includes a conductive layer, an amorphous silicon layer, and a silicide outer layer. The silicide outer layer contains a metal that has an anneal temperature to form the silicide outer layer at a temperature below that which damages the chip component.Type: ApplicationFiled: January 16, 2004Publication date: July 21, 2005Inventors: James Smith, Thomas Novet, Alexander Govyadinov
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Patent number: 6902458Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: GrantFiled: January 12, 2004Date of Patent: June 7, 2005Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Michael David Bic, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
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Publication number: 20050017624Abstract: An emitter includes a single crystal electron source, an epitaxial layer, and a thin conductor layer. When an electric field is induced from the conductor across the epitaxial layer, electrons are emitted from the electron source, transported through the epitaxial layer, and are emitted from the conductor layer.Type: ApplicationFiled: July 23, 2003Publication date: January 27, 2005Inventors: Thomas Novet, Paul Benning, Alexander Govyadinov, Robert Bicknell-Tassius
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Publication number: 20040222729Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: ApplicationFiled: May 18, 2004Publication date: November 11, 2004Inventors: Zhizhang Chen, Michael J. Regan, Brian E. Bolf, Thomas Novet, Paul J. Benning, Mark Alan Johnstone, Sriram Ramamoorthi
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Publication number: 20040211975Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: ApplicationFiled: May 18, 2004Publication date: October 28, 2004Inventors: Zhizhang Chen, Michael J. Regan, Brian E. Bolf, Thomas Novet, Paul J. Benning, Mark Alan Johnstone, Sriram Ramamoorthi
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Patent number: 6787792Abstract: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.Type: GrantFiled: April 18, 2002Date of Patent: September 7, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Thomas Novet, David M. Schut
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Patent number: 6783418Abstract: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.Type: GrantFiled: January 15, 2004Date of Patent: August 31, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Thomas Novet, David M. Schut
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Patent number: 6781146Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the tunneling layer is formed. A cathode layer is formed on the tunneling layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: GrantFiled: April 30, 2001Date of Patent: August 24, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Michael J. Regan, Brian E Bolf, Thomas Novet, Paul J. Benning, Mark Alan Johnstone, Sriram Ramamoorthi
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Publication number: 20040147050Abstract: An emitter includes an electron supply layer, a dielectric layer on the electron supply layer defining an emission area, and a filled zeolite emission layer within the defined emission area and in contact with the electron supply layer. The filled zeolite emission layer holds a semiconductor material within the cage of the zeolite.Type: ApplicationFiled: January 15, 2004Publication date: July 29, 2004Inventors: Thomas Novet, David M. Schut
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Publication number: 20040140748Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: ApplicationFiled: January 12, 2004Publication date: July 22, 2004Inventors: Zhizhang Chen, Michael David Bice, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
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Publication number: 20040130251Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.Type: ApplicationFiled: October 15, 2003Publication date: July 8, 2004Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
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Patent number: 6753544Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: GrantFiled: April 30, 2001Date of Patent: June 22, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Michael David Bice, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
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Publication number: 20040087240Abstract: An emitter includes an electron supply and a tunneling layer disposed on the electron supply. A cathode layer is disposed on the tunneling layer. A conductive electrode has multiple layers of conductive material. The multiple layers include a protective layer disposed on the cathode layer. The conductive electrode has been etched to define an opening thereby exposing a portion of the cathode layer.Type: ApplicationFiled: October 15, 2003Publication date: May 6, 2004Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
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Publication number: 20040057372Abstract: A re-recordable data storage medium is disclosed. One embodiment of the medium includes a dielectric material and a filler material. The dielectric material is organized in columnar channels over which memory cells are logically distributed. The filler material is within the columnar channels to realize the memory cells. The filler material of each memory cell has at least a first configuration and a second configuration. The first configuration corresponds to a first storable logical value, and the second configuration corresponds to a second storable logical value.Type: ApplicationFiled: September 20, 2002Publication date: March 25, 2004Inventors: David M. Schut, Alexander Govyadinov, Thomas Novet, Paul H. McClelland