Abstract: A system and method control a volume based on location. The system comprises a switch and an asset. The switch is for a network including an operating area for a region. The region is divided into a plurality of zones. The asset is disposed in one of the zones. The asset includes an audio output device. The audio output device is set to a predetermined volume level as a function of one of the plurality of the zones in which the asset is disposed.

Abstract: A system and method control a volume based on location. The system comprises a switch and an asset. The switch is for a network including an operating area for a region. The region is divided into a plurality of zones. The asset is disposed in one of the zones. The asset includes an audio output device. The audio output device is set to a predetermined volume level as a function of one of the plurality of the zones in which the asset is disposed.

Abstract: Various embodiments of dual broadcast and narrowcast systems and methods are disclosed. One method embodiment, among others, comprises the steps of receiving optical narrowcast signals and converting the optical narrowcast signals to a radio frequency (RF) domain at a first photodiode, receiving optical broadcast signals and converting the optical broadcast signals to the radio frequency (RF) domain at a second photodiode, and combining the RF domain narrowcast and broadcast signals for transmission over a medium.

Abstract: An automatic provisioning methodology for a mobile computing device in a wireless network is disclosed herein. The mobile computing device can support open communication with a wireless switch, which is configured to function as a load request proxy between the mobile computing device and a mobile services system on the wireless network. The mobile services system sends provisioning data to the wireless switch (using secure communications), which in turn sends the provisioning data to the mobile computing device. The mobile computing device can then use the provisioning data to configure its software applications, security settings, and the like.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: An optical transmitter is provided that includes a laser subassembly generating an optical signal having a plurality of operating characteristics. A controller, which drives the laser subassembly by applying at least one control parameter thereto, includes a predetermined, empirically derived database relating the plurality of operating characteristics of the laser subassembly to the control parameters. The controller adjusts at least one control parameter based at least in part on data extracted from the database so that the operating characteristic is substantially optimized.

Abstract: An optical transmitter is provided that includes a laser subassembly generating an optical signal having a plurality of operating characteristics. A controller, which drives the laser subassembly by applying at least one control parameter thereto, includes a predetermined, empirically derived database relating the plurality of operating characteristics of the laser subassembly to the control parameters. The controller adjusts at least one control parameter based at least in part on data extracted from the database so that the operating characteristic is substantially optimized.

Abstract: An in-line distortion generator for coupling in-line with a non-linear device (NLD) produces an output signal of useful amplitude, but with low composite triple beat and cross modulation distortions. The distortion generator comprises an instant controlled non-linear attenuator which utilizes the non-linear current flowing through a pair of diodes to provide the proper amount of signal attenuation over the entire frequency bandwidth. The distortion generator circuitry is always matched to the NLD, thereby ensuring a frequency response that is predictable and predefined. The distortion generator may also include a temperature compensation circuit to ensure consistent operation throughout a wide temperature range.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline substrate of a semiconductor structure by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. An optical waveguide is formed in a monocrystalline layer grown on the semiconductor structure for distributing an optical signal to a selected portion of circuitry formed in the semiconductor structure. An optical source is formed in the semiconductor structure and coupled to the optical waveguide for generating a control signal and a data signal concurrently.

Abstract: An apparatus for effecting conversion between communication signals in a first signal-form and in a second signal-form includes: (a) a first circuit region arranged on a monocrystalline silicon substrate; (b) an amorphous oxide material overlying the first circuit region; (c) a monocrystalline perovskite oxide material overlying the amorphous oxide; (d) a second circuit region arranged a monocrystalline compound semiconductor material overlying the perovskite oxide; (e) a receiver established in the first circuit region for converting received input signals in the first signal-form into converted signals in the second signal-form provided at a transfer locus; and (f) a signal processor established in the second circuit region coupled with the transfer locus for processing received converted signals to present a formatted signal in the second signal-form at an output locus. The apparatus is implemented in a monolithic integrated structure arranged on a single monolithic silicon substrate.

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser.

Abstract: A semiconductor structure includes an optical waveguide that supports concurrent transmission of redundant optical signals along multiple logical paths, and a semiconductor component that is selectively coupled through an optical interface to one of the optical signals in response to control electronics to provide equipment and path redundancies. Preferably, the semiconductor structure has a combination of compound semiconductor material and Group IV semiconductor material.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: An optical output device (164) includes a moncrystalline silicon substrate (102) and multiple light sources (168a-168n) formed of compound semiconductor materials. An accommodating buffer layer (104) lies between the light sources (168a-168n) and the substrate (102). An optical interconnect (170), such as a waveguide, is formed over the multiple light sources (168a-168n) and connects them to an output port (172). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon substrate (102) by an amorphous interface layer (106) of silicon oxide, and is lattice matched to both the underlying silicon substrate (102) and the waveguide (170). Any lattice mismatch between the accommodating buffer layer (104) and the underlying silicon substrate (102) is taken care of by the amorphous interface layer (106).

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: An in-line distortion generator for coupling in-line with a non-linear device (NLD) produces an output signal of useful amplitude, but with low composite triple beat and cross modulation distortions. The distortion generator comprises an instant controlled non-linear attenuator which utilizes the non-linear current flowing through a pair of diodes to provide the proper amount of signal attenuation over the entire frequency bandwidth. The distortion generator circuitry is always matched to the NLD, thereby ensuring a frequency response that is predictable and predefined. The distortion generator may also include a temperature compensation circuit to ensure consistent operation throughout a wide temperature range.

Abstract: An HFC return path system uses digital conversion and transport at the fiber optic node, so as to replace analog laser technology with a high-speed baseband digital technology, thereby providing immunity from the troublesome analog laser impairments, enabling longer distances to be covered, potentially avoiding the need for hub repeater hardware required in analog systems, among other benefits.