Patents by Inventor Timothy J. Brophy

Timothy J. Brophy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8194888
    Abstract: A system and method control a volume based on location. The system comprises a switch and an asset. The switch is for a network including an operating area for a region. The region is divided into a plurality of zones. The asset is disposed in one of the zones. The asset includes an audio output device. The audio output device is set to a predetermined volume level as a function of one of the plurality of the zones in which the asset is disposed.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: June 5, 2012
    Assignee: Symbol Technologies, Inc.
    Inventor: Timothy J. Brophy
  • Publication number: 20100080402
    Abstract: A system and method control a volume based on location. The system comprises a switch and an asset. The switch is for a network including an operating area for a region. The region is divided into a plurality of zones. The asset is disposed in one of the zones. The asset includes an audio output device. The audio output device is set to a predetermined volume level as a function of one of the plurality of the zones in which the asset is disposed.
    Type: Application
    Filed: September 29, 2008
    Publication date: April 1, 2010
    Inventor: Timothy J. Brophy
  • Publication number: 20090028564
    Abstract: Various embodiments of dual broadcast and narrowcast systems and methods are disclosed. One method embodiment, among others, comprises the steps of receiving optical narrowcast signals and converting the optical narrowcast signals to a radio frequency (RF) domain at a first photodiode, receiving optical broadcast signals and converting the optical broadcast signals to the radio frequency (RF) domain at a second photodiode, and combining the RF domain narrowcast and broadcast signals for transmission over a medium.
    Type: Application
    Filed: July 27, 2007
    Publication date: January 29, 2009
    Inventors: Fernando X. Villarruel, Timothy J. Brophy
  • Publication number: 20080205339
    Abstract: An automatic provisioning methodology for a mobile computing device in a wireless network is disclosed herein. The mobile computing device can support open communication with a wireless switch, which is configured to function as a load request proxy between the mobile computing device and a mobile services system on the wireless network. The mobile services system sends provisioning data to the wireless switch (using secure communications), which in turn sends the provisioning data to the mobile computing device. The mobile computing device can then use the provisioning data to configure its software applications, security settings, and the like.
    Type: Application
    Filed: February 28, 2007
    Publication date: August 28, 2008
    Applicant: SYMBOL TECHNOLOGIES, INC.
    Inventor: Timothy J. Brophy
  • Patent number: 7019332
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: March 28, 2006
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Amarildo J. C. Vieira, Barbara F. Barenburg, Timothy J. Brophy
  • Patent number: 6934310
    Abstract: An optical transmitter is provided that includes a laser subassembly generating an optical signal having a plurality of operating characteristics. A controller, which drives the laser subassembly by applying at least one control parameter thereto, includes a predetermined, empirically derived database relating the plurality of operating characteristics of the laser subassembly to the control parameters. The controller adjusts at least one control parameter based at least in part on data extracted from the database so that the operating characteristic is substantially optimized.
    Type: Grant
    Filed: December 11, 2002
    Date of Patent: August 23, 2005
    Assignee: General Instrument Corporation
    Inventors: Timothy J. Brophy, Brian T. Harte, Daniel Charles Fiorella, III
  • Publication number: 20040001520
    Abstract: An optical transmitter is provided that includes a laser subassembly generating an optical signal having a plurality of operating characteristics. A controller, which drives the laser subassembly by applying at least one control parameter thereto, includes a predetermined, empirically derived database relating the plurality of operating characteristics of the laser subassembly to the control parameters. The controller adjusts at least one control parameter based at least in part on data extracted from the database so that the operating characteristic is substantially optimized.
    Type: Application
    Filed: December 11, 2002
    Publication date: January 1, 2004
    Applicant: General Instrument Corporation
    Inventors: Timothy J. Brophy, Brain T. Harte, Daniel Charles Fiorella
  • Patent number: 6577177
    Abstract: An in-line distortion generator for coupling in-line with a non-linear device (NLD) produces an output signal of useful amplitude, but with low composite triple beat and cross modulation distortions. The distortion generator comprises an instant controlled non-linear attenuator which utilizes the non-linear current flowing through a pair of diodes to provide the proper amount of signal attenuation over the entire frequency bandwidth. The distortion generator circuitry is always matched to the NLD, thereby ensuring a frequency response that is predictable and predefined. The distortion generator may also include a temperature compensation circuit to ensure consistent operation throughout a wide temperature range.
    Type: Grant
    Filed: April 1, 1999
    Date of Patent: June 10, 2003
    Assignee: General Instrument Corporation
    Inventors: Shutong Zhou, Timothy J. Brophy, Richard A. Meier
  • Publication number: 20030035607
    Abstract: An apparatus for effecting conversion between communication signals in a first signal-form and in a second signal-form includes: (a) a first circuit region arranged on a monocrystalline silicon substrate; (b) an amorphous oxide material overlying the first circuit region; (c) a monocrystalline perovskite oxide material overlying the amorphous oxide; (d) a second circuit region arranged a monocrystalline compound semiconductor material overlying the perovskite oxide; (e) a receiver established in the first circuit region for converting received input signals in the first signal-form into converted signals in the second signal-form provided at a transfer locus; and (f) a signal processor established in the second circuit region coupled with the transfer locus for processing received converted signals to present a formatted signal in the second signal-form at an output locus. The apparatus is implemented in a monolithic integrated structure arranged on a single monolithic silicon substrate.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Timothy J. Brophy, Philip Miguelez
  • Publication number: 20030036213
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline substrate of a semiconductor structure by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. An optical waveguide is formed in a monocrystalline layer grown on the semiconductor structure for distributing an optical signal to a selected portion of circuitry formed in the semiconductor structure. An optical source is formed in the semiconductor structure and coupled to the optical waveguide for generating a control signal and a data signal concurrently.
    Type: Application
    Filed: August 16, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventor: Timothy J. Brophy
  • Publication number: 20030034538
    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. A composite integrated circuit having a tunable laser is provided. The laser may be mode-locked. Injection-locking may be used to pass optical properties to a slave laser.
    Type: Application
    Filed: August 15, 2001
    Publication date: February 20, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Timothy J. Brophy, Barbara Foley Barenburg, Amarildo Vieira, Kerry I. Litvin
  • Publication number: 20030021515
    Abstract: A semiconductor structure includes an optical waveguide that supports concurrent transmission of redundant optical signals along multiple logical paths, and a semiconductor component that is selectively coupled through an optical interface to one of the optical signals in response to control electronics to provide equipment and path redundancies. Preferably, the semiconductor structure has a combination of compound semiconductor material and Group IV semiconductor material.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventor: Timothy J. Brophy
  • Publication number: 20030015697
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 20, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Timothy J. Brophy, Wang Jun, Kerry I. Litvin, Barbara F. Barenburg
  • Publication number: 20030015710
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 20, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Amarildo J.C. Vieira, Barbara F. Barenburg, Timothy J. Brophy
  • Publication number: 20030015712
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 23, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Amarildo J.C. Vieira, Timothy J. Brophy
  • Publication number: 20030016415
    Abstract: An optical output device (164) includes a moncrystalline silicon substrate (102) and multiple light sources (168a-168n) formed of compound semiconductor materials. An accommodating buffer layer (104) lies between the light sources (168a-168n) and the substrate (102). An optical interconnect (170), such as a waveguide, is formed over the multiple light sources (168a-168n) and connects them to an output port (172). The accommodating buffer layer (104) is a layer of monocrystalline oxide spaced apart from the silicon substrate (102) by an amorphous interface layer (106) of silicon oxide, and is lattice matched to both the underlying silicon substrate (102) and the waveguide (170). Any lattice mismatch between the accommodating buffer layer (104) and the underlying silicon substrate (102) is taken care of by the amorphous interface layer (106).
    Type: Application
    Filed: July 23, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Wang Jun, Timothy J. Brophy
  • Publication number: 20010054927
    Abstract: An in-line distortion generator for coupling in-line with a non-linear device (NLD) produces an output signal of useful amplitude, but with low composite triple beat and cross modulation distortions. The distortion generator comprises an instant controlled non-linear attenuator which utilizes the non-linear current flowing through a pair of diodes to provide the proper amount of signal attenuation over the entire frequency bandwidth. The distortion generator circuitry is always matched to the NLD, thereby ensuring a frequency response that is predictable and predefined. The distortion generator may also include a temperature compensation circuit to ensure consistent operation throughout a wide temperature range.
    Type: Application
    Filed: April 1, 1999
    Publication date: December 27, 2001
    Inventors: SHUTONG ZHOU, TIMOTHY J. BROPHY, RICHARD MEIER
  • Patent number: 6323793
    Abstract: An HFC return path system uses digital conversion and transport at the fiber optic node, so as to replace analog laser technology with a high-speed baseband digital technology, thereby providing immunity from the troublesome analog laser impairments, enabling longer distances to be covered, potentially avoiding the need for hub repeater hardware required in analog systems, among other benefits.
    Type: Grant
    Filed: April 21, 2000
    Date of Patent: November 27, 2001
    Assignee: General Instrument Corporation
    Inventors: Robert Landis Howald, Erik Christopher Metz, Timothy J. Brophy