Abstract: A bowl mill for producing coarse ground particles has a substantially closed body, a bowl assembly, a plurality of grinding rolls, and a coarse particle transport enabling area. The substantially closed body has an interior area. The bowl assembly includes a rotatable grinding table mounted for rotation in a direction of rotation in the interior area. The grinding table has a grinding surface thereon. The plurality of grinding rolls are positioned proximate the grinding surface. The grinding rolls and the grinding surface define a grinding area therebetween. The coarse particle transport enabling area is located radially outward from the grinding area. The coarse particle transport enabling area is configured to allow the coarse particles to freely exit the grinding area and to mitigate the coarse particles from being circulated back into the grinding area.

Abstract: A bowl mill for producing coarse ground particles has a substantially closed body, a bowl assembly, a plurality of grinding rolls, and a coarse particle transport enabling area. The substantially closed body has an interior area. The bowl assembly includes a rotatable grinding table mounted for rotation in a direction of rotation in the interior area. The grinding table has a grinding surface thereon. The plurality of grinding rolls are positioned proximate the grinding surface. The grinding rolls and the grinding surface define a grinding area therebetween. The coarse particle transport enabling area is located radially outward from the grinding area. The coarse particle transport enabling area is configured to allow the coarse particles to freely exit the grinding area and to mitigate the coarse particles from being circulated back into the grinding area.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Abstract: A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.

Abstract: The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Abstract: The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, and a polyether amine. The inventive method comprises chemically-mechanically polishing a substrate with the aforementioned polishing system.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon.

Abstract: The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, a carboxylic acid, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide.

Abstract: A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.

Abstract: The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The inventive chemical-mechanical polishing system comprises (a) ceria, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing system has a pH of about 4 to about 6.

Abstract: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

Abstract: The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKa of about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

Abstract: The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.