Patents by Inventor Ting Chen

Ting Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11944017
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Chien Chung Huang, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Patent number: 11939386
    Abstract: Disclosed are a new AXL-targeting monoclonal antibody and antibody-drug conjugate. Also disclosed is a method for preparing said antibody and antibody-drug conjugate. The AXL antibody of the present invention can bind with purified human AXL protein and multiple AXL on tumor cell surface with high effectiveness and high specificity. Said humanized antibody also has high affinity and low immunogenicity. Said AXL antibody-drug conjugate has markable performance against tumors having high AXL expression.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: March 26, 2024
    Assignee: Shanghai Institute of Materia Medica, Chinese Academy of Sciences
    Inventors: Ke Yu, Jingkang Shen, Tao Meng, Jinpeng Pei, Lanping Ma, Xin Wang, Rui Jin, Zhiyan Du, Lin Chen, Ting Yu, Yongliang Zhang
  • Publication number: 20240095168
    Abstract: A computing system performs shared cache allocation to allocate cache resources to groups of tasks. The computing system monitors the bandwidth at a memory hierarchy device that is at a next level to the cache in a memory hierarchy of the computing system. The computing system estimates a change in dynamic power from a corresponding change in the bandwidth before and after the cache resources are allocated. The allocation of the cache resources are adjusted according to an allocation policy that receives inputs including the estimated change in the dynamic power and a performance indication of task execution.
    Type: Application
    Filed: August 17, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Pin Chen, Jia-Ming Chen, Chien-Yuan Lai, Ya Ting Chang, Cheng-Tse Chen
  • Publication number: 20240094902
    Abstract: A method for selecting an application and associated operational guidance to utilize on a mobile device is disclosed. In one embodiment, such a method identifies a selected environment of interest. Within the selected environment, the method identifies one or more applications that are commonly utilized by users within the selected environment and documents the one or more applications. The method detects physical entry of a particular user into the selected environment and, in response to detecting the entry, automatically notifies the particular user of the one or more applications that are commonly utilized within the selected environment. In certain embodiments, the method enables the user to quickly launch the one or more applications and/or provides operational guidance to the user with regard to using the one or more applications. A corresponding system and computer program product are also disclosed.
    Type: Application
    Filed: September 20, 2022
    Publication date: March 21, 2024
    Applicant: International Business Machines Corporation
    Inventors: Xiang Wei Li, Dong Chen, Ye Chuan Wang, Ting Ting Zhan, Ju Ling Liu, Yu An, Wei Yan
  • Publication number: 20240095177
    Abstract: A computing system performs partial cache deactivation. The computing system estimates the leakage power of a cache based on operating conditions of the cache including voltage and temperature. The computing system further identifies a region of the cache as a candidate for deactivation based on cache hit counts. The computing system then adjusts the size of the region for the deactivation based on the leakage power and a bandwidth of a memory hierarchy device. The memory hierarchy device is at the next level to the cache in a memory hierarchy of the computing system.
    Type: Application
    Filed: August 17, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Pin Chen, Jia-Ming Chen, Chien-Yuan Lai, Ya Ting Chang, Cheng-Tse Chen
  • Publication number: 20240099150
    Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Publication number: 20240096498
    Abstract: A method for evaluating a risk of a subject getting a specific disease includes steps of: storing a reference database that contains original parameter sets; selecting target alleles from an SNP profile derived from genome sequencing data of a subject; selecting target parameter sets from among the original parameter sets; calculating, for each of the target parameter sets, a race factor based on a global risk allele frequency and a group-specific risk allele frequency included in the target parameter set; calculating a genetic factor based on statistics, global reference allele frequencies, the race factors for the target parameter sets, and numbers of chromosomes in homologous chromosome pairs included in the target parameter sets; calculating a citation factor based on numbers of citation times included in the target parameter sets; and calculating a risk score based on the genetic factor and the citation factor.
    Type: Application
    Filed: August 28, 2023
    Publication date: March 21, 2024
    Inventors: Yi-Ting CHEN, Sing-Han HUANG, Ching-Yung LIN, Xiang-Yu LIN, Cheng-Tang WANG, Raksha NANDANAHOSUR RAMESH, Pei-Hsin CHEN
  • Publication number: 20240096781
    Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.
    Type: Application
    Filed: March 20, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
  • Publication number: 20240096883
    Abstract: A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ji-Cheng Chen, Ching-Hwanq Su, Kuan-Ting Liu, Shih-Hang Chiu
  • Patent number: 11936378
    Abstract: An interface circuit and an electronic apparatus, including: a programmable current array (1), generating a first current and a second current transmitted to a common mode and differential mode generation circuit (2) according to an input code, and a third current and a fourth current transmitted to a driving bias generation circuit (3) according to the input code; the common mode and differential mode generation circuit (2), generating a common mode voltage according to the first current, and generating a high level voltage and a low level voltage according to the second current and the common mode voltage; a driving bias generation circuit (3), simulating a load according to the third and fourth currents, and generating a bias voltage based on the load and the low and high level voltages; an output driving circuit (4), converting an input signal into a differential signal in which the common mode voltage and a differential mode amplitude are configurable.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: March 19, 2024
    Assignees: NO.24 RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION, Chongqing GigaChip Technology Co., Ltd.
    Inventors: Ting Li, Gangyi Hu, Ruzhang Li, Yong Zhang, Yabo Ni, Dongbing Fu, Jian'an Wang, Guangbing Chen
  • Patent number: 11936186
    Abstract: Provided are a method and apparatus for evaluating a degree of frequency regulation urgency of a generator set, a power system and a storage medium.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: March 19, 2024
    Assignees: STATE GRID FUJIAN ELECTRIC POWER COMPANY LIMITED, STATE GRID FUJIAN ELECTRIC POWER RESEARCH INSTITUTE, CHINA ELECTRIC POWER RESEARCH INSTITUTE COMPANY LIMITED
    Inventors: Zhenhua Xu, Risheng Fang, Ting Huang, Dahai Yu, Kewen Li, Xiangyu Tao, Daoshan Huang, Yi Su, Zhi Chen, Danyue Wu, Huiyu Zhang
  • Patent number: 11934171
    Abstract: The present disclosure discloses a servo motor and an encoder calibration method. The encoder calibration method includes: calculating a gain error, an offset error and a phase error, by an error calculation block, according to a first signal and a second signal output by an encoder; calculating at least one gain calibration parameter, at least one offset calibration parameter and at least one phase calibration parameter, by the error calibration block, according to the gain error, the offset error and the phase error; and calibrating sequentially, by the encoder, the gain, the offset and the phase of the first signal and the second signal according to the at least one gain calibration parameter, the at least one offset calibration parameter and the at least one phase calibration parameter, wherein performing at least one gain calibration and offset calibration after the phase calibration is completed.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: March 19, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chih-Kai Chiu, Bo-Ting Yeh, Tsan-Huang Chen
  • Publication number: 20240088225
    Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.
    Type: Application
    Filed: November 14, 2023
    Publication date: March 14, 2024
    Inventors: Su-Hao Liu, Wen-Yen Chen, Li-Heng Chen, Li-Ting Wang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Ying-Lang Wang
  • Publication number: 20240085798
    Abstract: An edge exposure tool may include a lens adjustment device that is capable of automatically adjusting various parameters of an edge exposure lens to account for changes in operating parameters of the edge exposure tool. In some implementations, the edge exposure tool may also include a controller that is capable of determining edge adjustment parameters for the edge exposure lens and exposure control parameters for the edge exposure tool using techniques such as big data mining, machine learning, and neural network processing. The lens adjustment device and the controller are capable of reducing and/or preventing the performance of the edge exposure tool from drifting out of tolerance, which may maintain the operation performance of the edge exposure tool and reduce the likelihood of wafer scratching, and may reduce the down-time of the edge exposure tool that would otherwise be caused by cleaning and calibration of the edge exposure lens.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Yong-Ting WU, Yu Kai CHEN
  • Publication number: 20240082640
    Abstract: An exercise intensity assessing system includes a physiological information sensor, a signal transmitter connected with the physiological information sensor, a central control host connected with the signal transmitter, and a cloud database connected with the central control host. The physiological information sensor senses physiological information of an exerciser before and after the exerciser exercises. The physiological information is transmitted by the signal transmitter to the central control host, and transmitted by the central control host to the cloud database for being diagnosed and analyzed by a fitness instructor. The cloud database obtains a forecasted watt value corresponding to the physiological information, and obtains a resistance level of different fitness apparatuses according to the forecasted watt value.
    Type: Application
    Filed: October 18, 2022
    Publication date: March 14, 2024
    Applicant: EHUNTSUN HEALTH TECHNOLOGY CO., LTD.
    Inventors: Chao-Chuan CHEN, Han-Pin HO, Jong-Shyan WANG, Yu-Ting LIN, Chi-Yao CHIANG, Yu-Liang LIN
  • Publication number: 20240082229
    Abstract: The present disclosure provides methods, drug combinations and kits for treating, ameliorating, reversing and/or preventing a Helicobacter pylori (H. pylori) infection in a patient in need thereof.
    Type: Application
    Filed: August 1, 2023
    Publication date: March 14, 2024
    Applicant: TENNOR THERAPEUTICS (SUZHOU) LIMITED
    Inventors: Zhenkun MA, Guozhu GENG, Jing CHEN, Yu LIU, Xiangyi XU, Changlin AI, Junlei ZHANG, Ting SONG, Shuangshuang ZHAO
  • Publication number: 20240082642
    Abstract: An intelligent exercise intensity assessing system includes an exercise testing machine, a physiological information sensor, a signal transmitter connected with the physiological information sensor, a central control host connected with the signal transmitter, and a cloud database connected with the central control host. The physiological information sensor senses physiological information of an exerciser before and after the exerciser operates the exercise testing machine. The physiological information is transmitted by the signal transmitter to the central control host, and transmitted by the central control host to the cloud database. The cloud database analyzes the physiological information to obtain a corresponding forecasted watt value, and obtains a resistance level of different fitness apparatuses according to the forecasted watt value.
    Type: Application
    Filed: October 18, 2022
    Publication date: March 14, 2024
    Applicant: EHUNTSUN HEALTH TECHNOLOGY CO., LTD.
    Inventors: Chao-Chuan CHEN, Han-Pin HO, Jong-Shyan WANG, Yu-Ting LIN, Chi-Yao CHIANG, Yu-Liang LIN
  • Publication number: 20240088033
    Abstract: A method of forming a semiconductor device is provided. A transistor is formed at a first side of the substrate and a first dielectric layer is formed aside the transistor. A first metal via is formed through the first dielectric layer and aside the transistor. A first interconnect structure is formed over the first side of the substrate and electrically connected to the transistor and the first metal via. The substrate is thinned from a second side of the substrate. A capacitor is formed at the second side of the substrate and a second dielectric layer is formed aside the capacitor. A second metal via is formed through the second dielectric layer and the substrate and electrically connected to the first metal via.
    Type: Application
    Filed: March 20, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chao-Kai Chan, Chung-Hao Tsai, Chuei-Tang WANG, Wei-Ting Chen
  • Publication number: 20240085634
    Abstract: An optical fiber transmission device includes a substrate, a photonic integrated circuit, and an optical fiber assembly. The photonic integrated circuit is disposed on an area of the substrate. The substrate has a protruding structure at an interface with an edge of the photonic integrated circuit. The optical fiber assembly includes an optical fiber and a ferrule that sleeves the optical fiber. The protruding structure of the substrate is configured to abut against the ferrule to limit the position of the optical fiber assembly in a vertical direction of the substrate, such that the protruding structure is a stopper for the optical fiber assembly in the vertical direction.
    Type: Application
    Filed: September 14, 2023
    Publication date: March 14, 2024
    Applicant: AuthenX Inc.
    Inventors: Chun-Chiang YEN, Po-Kuan SHEN, Sheng-Fu LIN, Yi-Ting LU, Jun-Rong CHEN, Jenq-Yang CHANG, Mao-Jen WU
  • Publication number: 20240088078
    Abstract: Packaged memory devices including memory devices hybrid bonded to logic devices and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first memory die including a first memory cell electrically coupled to a first word line; a second memory cell electrically coupled to the first word line; and a first interconnect structure electrically coupled to the first word line; a circuitry die including a second interconnect structure, a first conductive feature of the first interconnect structure being bonded to a second conductive feature of the second interconnect structure through metal-to-metal bonds; and a word line driver electrically coupled to the first word line between the first memory cell and the second memory cell, the word line driver being electrically coupled to the first word line through the first interconnect structure and the second interconnect structure.
    Type: Application
    Filed: January 4, 2023
    Publication date: March 14, 2024
    Inventors: Chung-Hao Tsai, Yih Wang, Wei-Ting Chen, Chuei-Tang Wang, Chen-Hua Yu