Patents by Inventor TING-CIH KANG

TING-CIH KANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210035918
    Abstract: A semiconductor structure includes a semiconductor substrate, a shielding structure, a ground terminal, and a through silicon via. The shielding structure is disposed over the semiconductor substrate and includes a first metal layer, a second metal layer, and a third metal layer. The first metal layer is disposed over the semiconductor substrate. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer. The ground terminal is electrically connected to the third metal layer. The through silicon via is disposed over the semiconductor substrate and adjacent to the shielding structure.
    Type: Application
    Filed: July 31, 2019
    Publication date: February 4, 2021
    Inventors: Ting-Cih KANG, Hsih-Yang CHIU
  • Publication number: 20210020590
    Abstract: The present disclosure relates to an electronic device with an integral filtering component. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.
    Type: Application
    Filed: October 1, 2020
    Publication date: January 21, 2021
    Inventors: HSIH-YANG CHIU, TING-CIH KANG
  • Patent number: 10886236
    Abstract: An interconnect structure includes a first and second insulating layer, a first and second conductive line, and a first, second, and third conductive via. The second insulating layer is disposed on the first insulating layer. The first conductive line including a first and second portion, and the first, second, and the third conductive vias are embedded in the first insulating layer. The second conductive line including a third portion and fourth portion is embedded in the second insulating layer. The first conductive via connects the first and third portions. The second conductive via connects the second and third portions. The third conductive via connects the second and fourth portions. A first cross-sectional area surrounded by the first, second, third portions, the first, second conductive vias is substantially equal to a second cross-sectional area surrounded by the second, third, fourth portions, the second, third conductive vias.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: January 5, 2021
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Ting-Cih Kang, Hsih-Yang Chiu
  • Patent number: 10833029
    Abstract: The present disclosure relates to an electronic device and a method of manufacturing a filtering component of the electronic device. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.
    Type: Grant
    Filed: December 12, 2018
    Date of Patent: November 10, 2020
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Hsih-Yang Chiu, Ting-Cih Kang
  • Patent number: 10707151
    Abstract: The present disclosure provides a through silicon via structure and a method for manufacturing the same. The through silicon via structure includes a semiconductor substrate, a shaping film, a conductive line, a barrier layer, and an insulating layer. The shaping film is disposed over a back surface of the semiconductor substrate, and is configured to maintain a planar formation of the semiconductor substrate. The conductive line is disposed through the shaping film and in the semiconductor substrate. The barrier layer surrounds the conductive line, and the insulating layer surrounds the barrier layer.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: July 7, 2020
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventor: Ting-Cih Kang
  • Publication number: 20200176403
    Abstract: The present disclosure relates to an electronic device and a method of manufacturing a filtering component of the electronic device. The electronic device includes a semiconductor component, an insulating layer, at least one contact plug, and a filtering component. The insulating layer is disposed on the semiconductor component. The contact plug penetrates through the insulating layer. The filtering component is disposed on the insulating layer and the contact plug. The filtering component includes a bottom electrode, an isolation layer, a top electrode, and a dielectric layer. The bottom electrode is divided into a first segment connected to the contact plug and a second segment separated from the first segment. The isolation layer is disposed on the bottom electrode, the top electrode is disposed in the isolation layer, and the dielectric layer is disposed between the bottom electrode and the top electrode.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 4, 2020
    Inventors: Hsih-Yang CHIU, Ting-Cih KANG
  • Publication number: 20200161221
    Abstract: The present disclosure provides a through silicon via structure and a method for manufacturing the same. The through silicon via structure includes a semiconductor substrate, a shaping film, a conductive line, a barrier layer, and an insulating layer. The shaping film is disposed over a back surface of the semiconductor substrate, and is configured to maintain a planar formation of the semiconductor substrate. The conductive line is disposed through the shaping film and in the semiconductor substrate. The barrier layer surrounds the conductive line, and the insulating layer surrounds the barrier layer.
    Type: Application
    Filed: January 30, 2019
    Publication date: May 21, 2020
    Inventor: Ting-Cih KANG
  • Publication number: 20200105646
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, an active device, and a TSV structure. The semiconductor substrate has a first surface and a second surface opposite to the first surface. The active device is disposed in the semiconductor substrate at the first surface. The TSV structure extends through the semiconductor substrate from the first surface to the second surface. In some embodiments, the TSV structure includes a first portion and a second portion coupled to the first portion. The first portion of the TSV structure has a first width, the second portion of the TSV structure has a second width, and the second width of the second portion is greater than the first width of the first portion.
    Type: Application
    Filed: October 1, 2018
    Publication date: April 2, 2020
    Inventor: Ting-Cih KANG
  • Publication number: 20200075507
    Abstract: The present disclosure provides a semiconductor device and a method for preparing the same. The semiconductor device includes at least one chip and a seal ring. The chip is surrounded by the seal ring. The seal ring includes at least one first section and at least one second section. The first section includes an undulating structure.
    Type: Application
    Filed: August 30, 2018
    Publication date: March 5, 2020
    Inventor: TING-CIH KANG