Abstract: A method comprises: forming a die including a cavity; coupling an anchor to the die; coupling a first resonator to a side of the anchor, in which the first resonator is suspended over the cavity and is operable to bend towards or away from a bottom of the cavity; and coupling a second resonator to the side of the anchor, in which the second resonator is suspended over the cavity, at least a part of the first resonator is laterally between the side of the anchor and a part of the second resonator, and the first resonator is operable to bend in an opposite direction from the second resonator.

Abstract: A semiconductor package includes a semiconductor wafer having a first connection pad and a second connection pad spaced apart by a semiconductor region of the semiconductor wafer. Portions of the semiconductor wafer are covered by a protective overcoat. The semiconductor package also includes a cap wafer mounted to the semiconductor wafer and overpassing the semiconductor region of the semiconductor wafer. The cap wafer extends between the first connection pad and the second connection pad of the semiconductor wafer. The semiconductor package further includes an insulation material overlaying the cap wafer. The insulation material comprising vias to the first connection pad and the second connection pad, the vias being filled with a conductive material.

Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

Abstract: In one example, an apparatus comprises an acoustic resonator, the acoustic resonator including: an electrode; and a piezoelectric layer on the electrode, in which the electrode covers entirely a surface of the piezoelectric layer, and the piezoelectric layer has a convex portion with a non-uniform thickness.

Abstract: A filter includes an electromagnetic (EM) resonator having a first EM resonator terminal and a second EM resonator terminal. The second EM filter terminal is coupled to a ground terminal. The filter includes a first bulk acoustic wave (BAW) resonator coupled between the first EM resonator terminal and the ground terminal and includes a second BAW resonator coupled between the first EM resonator terminal and the ground terminal. A third BAW resonator is coupled between a first filter terminal and a first BAW resonator terminal of the first BAW resonator. A fourth BAW resonator is coupled between a second filter terminal and a second BAW resonator terminal of the second BAW resonator.

Abstract: A method includes forming a stress sensitive component on a first semiconductor die; forming a solder seal on the first semiconductor die, the solder seal extending from a first surface of the first semiconductor die, and surrounding the stress sensitive component, the solder seal having an interior surface that surrounds the stress sensitive component and having an exterior surface facing away from the stress sensitive component; flip chip mounting the first semiconductor die to a first surface of a second semiconductor die, the stress sensitive component facing the first surface of the second semiconductor die; and forming a solder joint between the solder seal and the first surface of the second semiconductor die.

Abstract: In one example, a method comprises etching a vertical spring in a substrate, the vertical spring encompassing a device formed on a front side of the substrate. The method further comprises bonding a cap to the front side of the substrate, the cap disposed over the device and the vertical spring.

Abstract: An apparatus includes a switch assembly having first and second switch terminals and a control terminal. The switch assembly includes a leakage attenuation circuit. The switch assembly is configured to, responsive to the control terminal having a first state, connect the first switch terminal to the second switch terminal and disconnect a circuit terminal of the leakage attenuation circuit from the first switch terminal. The switch assembly is configured to, responsive to the control terminal having a second state, connect the terminal of the leakage attenuation circuit to the first switch terminal and disconnect the first switch terminal from the second switch terminal.

Abstract: A tunable bulk acoustic wave (BAW) resonator includes: a first electrode adapted to be coupled to an oscillator circuit; a second electrode adapted to be coupled to the oscillator circuit; and a piezoelectric layer between the first electrode and the second electrode; and a Bragg mirror. The Bragg mirror has: a metal layer; and a dielectric layer between the metal layer and either of the first electrode or the second electrode. The tunable BAW resonator also includes: a radio-frequency (RF) signal source having a first end and a second end, the first end coupled to the first electrode, and the second end coupled to the second electrode; and an amplifier circuit between either the first electrode or the second electrode and the Bragg mirror metal layer.

Abstract: In one example, a method of forming a bulk acoustic wave (BAW) resonator comprises: forming an electrode on at least one of a semiconductor substrate, a sacrificial layer, or an acoustic reflector; and forming a piezoelectric layer on the electrode, the piezoelectric layer having a convex surface.

Abstract: An integrated circuit (IC) includes a semiconductor substrate and a mold compound on the semiconductor substrate. The IC also includes an acoustic signal generator between the mold compound and the semiconductor substrate. The acoustic signal generator is configured to transmit an acoustic signal having a predetermined set of frequencies through at least one of the semiconductor substrate or the mold compound.

Abstract: One example described herein includes an integrated circuit (IC). The IC includes a substrate having opposing first and second sides. The second side can include a curved surface. The IC also includes a resonator on the first side. A curvature of the curved surface can reflect a property of the resonator.

Abstract: An integrated circuit (IC) includes a filter circuit having a first input/output (I/O) filter terminal, a second I/O filter terminal, and a reference terminal. The filter circuit includes first and second resonators and first and second inductors. The first resonator has first and second resonator terminals. The first resonator terminal is electrically coupled to the first I/O filter terminal. The second resonator terminal is electrically coupled to the second I/O filter terminal. The second resonator has third and fourth resonator terminals. The third resonator terminal is electrically coupled to the first I/O filter terminal. The first inductor is electrically coupled between the second resonator terminal and the reference terminal. The second inductor is electrically coupled between the fourth resonator terminal and the reference terminal. The second inductor is magnetically coupled to the first inductor.

Abstract: In a described example, an apparatus includes: a first semiconductor die with a component on a first surface; a second semiconductor die mounted on a package substrate and having a third surface facing away from the package substrate; a solder seal bonded to and extending from the first surface of the first semiconductor die flip chip mounted to the third surface of the second semiconductor die, the solder seal at least partially surrounding the stress sensitive component; a first solder joint formed between the solder seal and the third surface of the second semiconductor die; a second solder joint formed between solder at an end of the post connect and the third surface of the second semiconductor die; and a mold compound covering the second surface of the first semiconductor die, a portion of the second semiconductor die, and an outside periphery of the solder seal.

Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

Abstract: In one example, an integrated circuit comprises a filter having first and second filter terminals. The filter includes a first inductor coupled between the first and second filter terminals. The filter further includes a resonator coupled between the first and second filter terminals. A second inductor is coupled between differential terminals and is magnetically coupled to the first inductor.

Abstract: A BAW resonator includes first and second electrodes located over a substrate. A piezoelectric layer is located between the first and second electrodes. A guard ring is located between the piezoelectric layer and the second electrode, and is spaced apart from a perimeter of the electrode. The guard ring has a width in a range from 2.5 ?m to 3.5 ?m.

Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

Abstract: A circuit includes: integrated circuit (IC) layers; a cavity formed in at least one of the IC layers; and a micro-acoustic resonator suspended in the cavity by an anchor. The anchor includes: a bridge portion coupled to the micro-acoustic resonator and extending over the cavity; a first acoustic reflector portion adjacent the bridge portion, extending over the cavity, and oriented differently than the bridge portion; and a second acoustic reflector portion adjacent the first acoustic reflector portion, extending over the cavity, and oriented differently than the first acoustic reflector portion.

Abstract: In one example, a method of forming a bulk acoustic wave (BAW) resonator comprises: forming an electrode on at least one of a semiconductor substrate, a sacrificial layer, or an acoustic reflector; and forming a piezoelectric layer on the electrode, the piezoelectric layer having a convex surface.