Patents by Inventor Tirumani N. Swaminathan

Tirumani N. Swaminathan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210108509
    Abstract: The disclosure provides a method and a computer program product for determining distribution of fracturing components in fracture clusters of a wellbore, and a fracturing controller. An example of the method includes: (1) modifying surface flow rates for pumping a fracturing component into the wellbore, (2) measuring surface pressures for the surface flow rates, and (3) determining flow rates for the fracture clusters employing the surface flow rates, the surface pressures, and a model representing flow distribution of the wellbore. An example fracturing controller includes (1) an interface configured to receive surface flow rates and corresponding surface pressures for pumping a fracturing component into a wellbore, wherein the surface flow rates are modified in a series of steps, and (2) a processor configured to determine flow rates for the fracture clusters employing the surface flow rates, the surface pressures, and a model representing flow distribution of the wellbore.
    Type: Application
    Filed: October 9, 2019
    Publication date: April 15, 2021
    Inventors: Tirumani N. Swaminathan, Dinesh Ananda Shetty
  • Publication number: 20210073314
    Abstract: The disclosure presents a technique for determining how downhole material will be distributed among two or more active perforation clusters in a hydraulic fracturing well system. The determination can be conducted during the execution of a treatment stage allowing modifications prior to completion of the treatment stage. The technique utilizes a three-step process where a first step can determine a predictive model of the wellbore, such as subterranean formation properties, wellbore properties, and target goal of the treatment stage. A second step can calibrate for unknown parameters, such as downhole HF fluid pressure at the active perforation clusters and downhole HF fluid flow rate at the perforation clusters. A third step can predict how downhole material will be distributed to the active perforation clusters and fracture clusters. The prediction result can be utilized to modify a pumping plan of the treatment stage to better achieve the targeted goal.
    Type: Application
    Filed: September 9, 2019
    Publication date: March 11, 2021
    Inventors: Baidurja Ray, Tirumani N. Swaminathan, Seyed Omid Razavi
  • Publication number: 20210073342
    Abstract: The disclosure presents a process for calibrating a diversion model for a treatment stage of a hydraulic fracturing well site. The process can pump a portion of the proppant into the wellbore, flush the wellbore with clean HF fluid, and then perform a diagnostic test to determine a near-wellbore (NWB) flow resistance parameter. Next, diverter material can be distributed into the wellbore and the amount of diverter material delivered to each active perforation cluster can be estimated. A second diagnostic test can be performed followed by computing diversion model parameters such as a near-wellbore zone length parameter for perforation clusters capable of receiving HF fluid. In another aspect, a system is disclosed that can direct operations of a well site pump and collect data from surface and downhole diagnostic sensors, and then use the collected data for the diversion model calibration process.
    Type: Application
    Filed: September 9, 2019
    Publication date: March 11, 2021
    Inventors: Seyed Omid Razavi, Joshua Camp, Tirumani N. Swaminathan, Baidurja Ray
  • Publication number: 20200362680
    Abstract: The disclosure is directed to a method and system that estimates the number of active fractures for a given hydraulic fracturing fluid pressure. The hydraulic fracturing pressure can be correlated to a corresponding hydraulic fracturing fluid absorption rate of downhole fractures. Using the pressure and rate correlation, an active fracture ratio can be determined and then utilized to estimate the number of active fractures at a given hydraulic fracturing fluid pressure. In other aspects, a target fluid pressure is represented by a curve or other shape corresponding to a fluid friction model so that the fluid pressure correlation to the fluid absorption rate can be utilized to compute the active fracture ratio. The disclosed system is operable to control a well site pump system to adjust the fluid pressure and fluid composition, to monitor the downhole fluid, to collect the fluid values, and to compute an estimated active fracture ratio.
    Type: Application
    Filed: May 17, 2019
    Publication date: November 19, 2020
    Inventors: Dinesh Ananda Shetty, Vladimir Nikolayevich Martysevich, Tirumani N. Swaminathan, Jianfu Ma
  • Patent number: 10450670
    Abstract: Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: October 22, 2019
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Patent number: 10145023
    Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: December 4, 2018
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, Jihong Chen
  • Patent number: 10100428
    Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 16, 2018
    Assignee: Corner Star Limited
    Inventors: Jihong Chen, Tirumani N. Swaminathan
  • Publication number: 20180291524
    Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.
    Type: Application
    Filed: April 29, 2016
    Publication date: October 11, 2018
    Inventors: Soubir Basak, Gaurab Samanta, Salvador Zepeda, Christopher V. Luers, Steven L. Kimbel, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Roberto Scala, Richard J. Phillips, Tirumani N. Swaminathan, Jihong Chen, Stephen Wayne Palmore, Peter Drury Wildes
  • Publication number: 20180080141
    Abstract: Methods for growing a reduced dislocation crystal ingot in an ingot growing system are disclosed. The system has a first crucible with a first base and a first sidewall extending upward from the first base to define an outer cavity. The method includes placing a weir in the outer cavity, placing a second crucible on the weir, placing feedstock material into the outer cavity, and melting the feedstock material to allow movement of the melt from the outer cavity inward of an intermediate cavity and into an inner cavity.
    Type: Application
    Filed: November 30, 2017
    Publication date: March 22, 2018
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Publication number: 20180044815
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein.
    Type: Application
    Filed: October 25, 2017
    Publication date: February 15, 2018
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Patent number: 9863063
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: January 9, 2018
    Assignee: Corner Star Limited
    Inventor: Tirumani N. Swaminathan
  • Patent number: 9863062
    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: January 9, 2018
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Patent number: 9822466
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: November 21, 2017
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Publication number: 20170016141
    Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 19, 2017
    Applicant: SUNEDISON, INC.
    Inventors: Tirumani N. Swaminathan, Jihong Chen
  • Publication number: 20170016142
    Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
    Type: Application
    Filed: July 17, 2015
    Publication date: January 19, 2017
    Applicant: SunEdison, Inc.
    Inventors: Jihong Chen, Tirumani N. Swaminathan
  • Patent number: 9376762
    Abstract: An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: June 28, 2016
    Assignee: Solaicx
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20150144056
    Abstract: A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.
    Type: Application
    Filed: November 22, 2013
    Publication date: May 28, 2015
    Inventors: Tirumani N. Swaminathan, John David Hilker, Salvador Zepeda
  • Publication number: 20140261154
    Abstract: A system for growing an ingot from a melt includes a first crucible, a second crucible, and a weir. The first crucible has a first base and a first sidewall that form an outer cavity for containing the melt. The weir is located on top of the first base at a location inward from the first sidewall to inhibit movement of the melt from a location outward of the weir to a location inward of the weir. The second crucible is sized for placement within the outer cavity and has a second base and a second sidewall that form an inner cavity. Related methods are also disclosed.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Inventors: Tirumani N. Swaminathan, Salvador Zepeda, John David Hilker
  • Publication number: 20140174337
    Abstract: A system for growing a crystal ingot includes a crucible and a weir. The crucible has a base and a sidewall for the containment of a silicon melt therein. The weir is located along the base of the crucible inward from the sidewall of the crucible. The weir has a body connected with at least a pair of legs disposed to inhibit movement of the silicon melt therebetween.
    Type: Application
    Filed: December 16, 2013
    Publication date: June 26, 2014
    Inventor: Tirumani N. Swaminathan
  • Publication number: 20140144372
    Abstract: An apparatus for growing ingots by the Czochralski method includes a growth chamber defining an enclosure configured to circulate a purge gas about the growing ingot and a crucible provided in the growth chamber configured to hold the molten silicon. A weir is supported in the crucible and is configured to separate the molten silicon into an inner growth region surrounding the melt/crystal interface from an outer region configured to receive the crystalline feedstock. The weir comprises at least one sidewall extending vertically and a cap extending substantially perpendicularly to the sidewall.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: SOLAICX, INC.
    Inventor: Tirumani N. Swaminathan