Patents by Inventor Toi Yue Becky Leung
Toi Yue Becky Leung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915932Abstract: Exemplary etching methods may include forming a plasma of a fluorine-containing precursor to produce plasma effluents. A first bias frequency may be applied while forming the plasma. The methods may include contacting a substrate housed in a processing region of a semiconductor processing chamber with the plasma effluents. The substrate may be or include a photomask. The methods may include etching a first layer of the photomask. Etching the first layer of the photomask may expose a second layer of the photomask. The methods may include adjusting the first bias frequency to a second bias frequency while maintaining the plasma of the fluorine-containing precursor. The methods may include etching the second layer of the photomask.Type: GrantFiled: April 28, 2021Date of Patent: February 27, 2024Assignee: Applied Materials, Inc.Inventors: Toi Yue Becky Leung, Madhavi Rajaram Chandrachood, Madhava Rao Yalamanchili
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Publication number: 20220351972Abstract: Exemplary etching methods may include forming a plasma of a fluorine-containing precursor to produce plasma effluents. A first bias frequency may be applied while forming the plasma. The methods may include contacting a substrate housed in a processing region of a semiconductor processing chamber with the plasma effluents. The substrate may be or include a photomask. The methods may include etching a first layer of the photomask. Etching the first layer of the photomask may expose a second layer of the photomask. The methods may include adjusting the first bias frequency to a second bias frequency while maintaining the plasma of the fluorine-containing precursor. The methods may include etching the second layer of the photomask.Type: ApplicationFiled: April 28, 2021Publication date: November 3, 2022Applicant: Applied Materials, Inc.Inventors: Toi Yue Becky Leung, Madhavi Rajaram Chandrachood, Madhava Rao Yalamanchili
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Publication number: 20100276391Abstract: Methods of operating inductively coupled plasma (ICP) reactors having ICP sources and substrate bias with phase control are provided herein. In some embodiments, a method of operating a first plasma reactor having a source RF generator inductively coupled to the first plasma reactor on one side of a substrate support surface of a substrate support within the first plasma reactor and a bias RF generator coupled to the substrate support on an opposing side of the substrate support surface, wherein the source RF generator and the bias RF generator provide respective RF signals at a common frequency may include selecting a desired value of a process parameter for a substrate to be processed; and adjusting the phase between respective RF signals provided by the source RF generator and the bias RF generator to a desired phase based upon a predetermined relationship between the process parameter and the phase.Type: ApplicationFiled: March 29, 2010Publication date: November 4, 2010Applicant: APPLIED MATERIALS, INC.Inventors: MICHAEL N. GRIMBERGEN, KEVEN KAISHENG YU, ALAN HIROSHI OUYE, MADHAVI R. CHANDRACHOOD, VALENTIN N. TODOROW, TOI YUE BECKY LEUNG, RICHARD LEWINGTON, DARIN BIVENS, RENEE KOCH, IBRAHIM M. IBRAHIM, AMITABH SABHARWAL, AJAY KUMAR
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Patent number: 7611976Abstract: Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.Type: GrantFiled: July 5, 2006Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Yi Ma, Khaled Z. Ahmed, Kevin L. Cunningham, Robert C. McIntosh, Abhilash J. Mayur, Haifan Liang, Mark Yam, Toi Yue Becky Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Eugene Miner
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Publication number: 20080179282Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one embodiment, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, at least one of trifluoromethane (CHF3), sulfur hexafluoride (SF6), hexafluoroethane (C2F6) or ammonia (NH3) and optionally a chlorine-free halogen containing gas and/or an insert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.Type: ApplicationFiled: October 5, 2007Publication date: July 31, 2008Inventors: Madhavi R. Chandrachood, Amitabh Sabharwal, Toi Yue Becky Leung, Michael Grimbergen
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Patent number: 7078302Abstract: In one embodiment, the invention generally provides a method for annealing a doped layer on a substrate including depositing a polycrystalline layer to a gate oxide layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer. The method further includes exposing the doped polycrystalline layer to a rapid thermal anneal to readily distribute the dopant throughout the polycrystalline layer. Subsequently, the method includes exposing the doped polycrystalline layer to a laser anneal to activate the dopant in an upper portion of the polycrystalline layer.Type: GrantFiled: February 23, 2004Date of Patent: July 18, 2006Assignee: Applied Materials, Inc.Inventors: Yi Ma, Khaled Z. Ahmed, Kevin L. Cunningham, Robert C. McIntosh, Abhilash J. Mayur, Haifan Liang, Mark Yam, Toi Yue Becky Leung, Christopher Olsen, Shulin Wang, Majeed Foad, Gary Eugene Miner
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Patent number: 6902947Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.Type: GrantFiled: May 9, 2003Date of Patent: June 7, 2005Assignee: Applied Materials, Inc.Inventors: Jeffrey D. Chinn, Rolf A. Guenther, Michael B. Rattner, James A. Cooper, Toi Yue Becky Leung, Claes H. Bjorkman
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Patent number: 6830950Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.Type: GrantFiled: November 20, 2002Date of Patent: December 14, 2004Assignee: Applied Materials, Inc.Inventors: Jeffrey D. Chinn, Rolf A. Guenther, Michael B. Rattner, James A. Cooper, Toi Yue Becky Leung
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Publication number: 20040033639Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.Type: ApplicationFiled: May 9, 2003Publication date: February 19, 2004Applicant: APPLIED MATERIALS, INC.Inventors: Jeffrey D. Chinn, Rolf A. Guenther, Michael B. Rattner, James A. Cooper, Toi Yue Becky Leung, Claes H. Bjorkman
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Patent number: 6666979Abstract: The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.Type: GrantFiled: October 29, 2001Date of Patent: December 23, 2003Assignee: Applied Materials, Inc.Inventors: Jeffrey D. Chinn, Vidyut Gopal, Sofiane Soukane, Toi Yue Becky Leung
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Publication number: 20030166342Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.Type: ApplicationFiled: November 20, 2002Publication date: September 4, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Jeffrey D. Chinn, Rolf A. Guenther, Michael B. Rattner, James A. Cooper, Toi Yue Becky Leung
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Patent number: 6576489Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.Type: GrantFiled: May 7, 2001Date of Patent: June 10, 2003Assignee: Applied Materials, Inc.Inventors: Toi Yue Becky Leung, Jeffrey D. Chinn
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Publication number: 20030080082Abstract: The present invention pertains to a method of fabricating a surface within a MEM which is free moving in response to stimulation. The free moving surface is fabricated in a series of steps which includes a release method, where release is accomplished by a plasmaless etching of a sacrificial layer material. An etch step is followed by a cleaning step in which by-products from the etch step are removed along with other contaminants which may lead to stiction. There are a series of etch and then clean steps so that a number of “cycles” of these steps are performed. Between each etch step and each clean step, the process chamber pressure is typically abruptly lowered, to create turbulence and aid in the removal of particulates which are evacuated from the structure surface and the process chamber by the pumping action during lowering of the chamber pressure. The final etch/clean cycle may be followed by a surface passivation step in which cleaned surfaces are passivated and/or coated.Type: ApplicationFiled: October 29, 2001Publication date: May 1, 2003Inventors: Jeffrey D. Chinn, Vidyut Gopal, Sofiane Soukane, Toi Yue Becky Leung
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Publication number: 20020164879Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.Type: ApplicationFiled: May 7, 2001Publication date: November 7, 2002Applicant: Applied Materials, Inc.Inventors: Toi Yue Becky Leung, Jeffrey D. Chinn