Patents by Inventor Toivo Koehler

Toivo Koehler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4449044
    Abstract: A focal plane detector mosaic array is formed by securing wafers of the detector material to a focal plane having individual conductor leads embedded therein, ion milling to delineate separate detector islands in individual electrical contact with the conductor leads, and using ion implantation to form p-n junctions in the detector islands.
    Type: Grant
    Filed: May 11, 1981
    Date of Patent: May 15, 1984
    Assignee: Carson Alexion Corporation
    Inventors: Ralph A. Rotolante, Toivo Koehler
  • Patent number: 4290844
    Abstract: A focal plane detector mosaic array is formed by securing wafers of the detector material to a focal plane having individual conductor leads embedded therein, ion milling to delineate separate detector islands in individual electrical contact with the conductor leads, and using ion implantation to form p-n junctions in the detector islands.
    Type: Grant
    Filed: February 26, 1979
    Date of Patent: September 22, 1981
    Assignee: Carson Alexiou Corporation
    Inventors: Ralph A. Rotolante, Toivo Koehler
  • Patent number: 4206003
    Abstract: A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
    Type: Grant
    Filed: January 23, 1979
    Date of Patent: June 3, 1980
    Assignee: Honeywell Inc.
    Inventor: Toivo Koehler
  • Patent number: 4137544
    Abstract: A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.
    Type: Grant
    Filed: July 5, 1977
    Date of Patent: January 30, 1979
    Assignee: Honeywell Inc.
    Inventor: Toivo Koehler
  • Patent number: 4003759
    Abstract: PN junctions in mercury cadmium telluride are formed by implantation of gold ions and a subsequent low temperature--short duration heat treatment.
    Type: Grant
    Filed: March 1, 1976
    Date of Patent: January 18, 1977
    Assignee: Honeywell Inc.
    Inventor: Toivo Koehler