Abstract: An imaging device including: unit pixel cells each including a first electrode, a second electrode, a photoelectric conversion layer, a charge accumulation region connected to the first electrode, and a signal detection circuit connected to the charge accumulation region; and a voltage supply circuit connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in a first period, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a second period. Each unit pixel cells includes a reset transistor which switches between supply and cutoff of a reset voltage initializing the charge accumulation region, and a potential difference between the first electrode and the second electrode when the reset voltage is supplied is greater than a potential difference between the first electrode and the second electrode after the reset voltage is cut off.

Abstract: A method for driving an imaging device which includes unit pixel cells each including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and second electrode, the photoelectric conversion layer having a photocurrent characteristic including a first voltage range, a second voltage range, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first voltage range and the second voltage range, the method including supplying a first voltage to the second electrode in a first period, and supplying a second voltage different from the first voltage to the second electrode in a second period different from the first period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.

Abstract: An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.

Abstract: An imaging device, including: a semiconductor substrate; a first pixel including a first photoelectric converter that converts incident light into first charges, a first charge detection circuit on the semiconductor substrate, the first charge detection circuit electrically connected to the first photoelectric converter and detecting the first charges, and a first capacitive element electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charges; and a second pixel comprising a second photoelectric converter that converts incident light into second charges, and a second charge detection circuit on the semiconductor substrate, the second charge detection circuit electrically connected to the second photoelectric converter and detecting the second charges, wherein the first capacitive element is at least partially located between the first photoelectric converter and the second photoelectric converter when viewed from a normal direction of t

Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.

Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An imaging device according to one aspect of the present disclosure includes: a first image pickup cell comprising a first photoelectric converter that converts incident light into a first charge, a first charge detection circuit that is electrically connected to the first photoelectric converter and detects the first charge, and a first capacitive element one end of which is electrically connected to the first photoelectric converter, the first capacitive element storing at least a part of the first charge; and a second image pickup cell comprising a second photoelectric converter that converts incident light into a second charge, and a second charge detection circuit that is electrically connected to the second photoelectric converter and detects the second charge.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal.

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract: A solid-state imaging device includes unit pixels formed on a semiconductor substrate. Each of the unit pixels includes a photoelectric converter, a floating diffusion, a pinning layer, and a pixel transistor. The pixel transistor includes a gate electrode formed on the semiconductor substrate, a source diffusion layer, and a drain diffusion layer. At least one of the source diffusion layer or the drain diffusion layer functions as the floating diffusion. The pinning layer is covered by the floating diffusion at a bottom and a side at a channel of the pixel transistor. A conductivity type of the floating diffusion is opposite to that of the pinning layer.

Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.

Abstract: An imaging device includes: a semiconductor substrate; a photoelectric conversion element including a first electrode, a second electrode, and a photoelectric conversion film, supported on the semiconductor substrate, and generating a signal by performing photoelectric conversion on incident light; a multilayer wiring structure including an upper wiring layer and a lower wiring layer provided between the semiconductor substrate and the second electrode; and a signal detection circuit provided in the semiconductor substrate and the multilayer wiring structure, including a signal detection transistor and a first capacitance element, and detecting the signal.

Abstract: An imaging device includes: unit pixel cells each including first and second electrodes, a photoelectric conversion layer therebetween, a charge accumulation region, and a signal detection circuit; and a voltage supply circuit, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period. The start and end of the exposure period is common to the unit pixel cells. The photoelectric conversion layer has a photocurrent characteristic including first to third voltage ranges. In the third voltage range between the first and second voltage ranges, an absolute value of a rate of change of a current density relative to a bias voltage is less than in the first and second voltage ranges. The voltage supply circuit supplies a second voltage to the second electrode in a non-exposure period such that the bias voltage applied to the photoelectric conversion layer falls within the third voltage range.

Abstract: An optical sensor includes: a semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing to the semiconductor layer; a gate insulating layer between the third region and the gate electrode, the gate insulating layer including a photoelectric conversion layer: a signal detection circuit including a first signal detection transistor, a first input of the first signal detection transistor being electrically connected to the first region; a first transfer transistor connected between the first region and the first input; and a first capacitor having one end electrically connected to the first input. The signal detection circuit detects an electrical signal corresponding to a change of a dielectric constant of the photoelectric conversion layer, the change being caused by incident light.

Abstract: An optical sensor includes: a semiconductor layer including first and second regions; a gate electrode; a gate insulating layer including a photoelectric conversion layer; a voltage supply circuit; and a signal detection circuit connected to the first region. The photoelectric conversion layer has a photocurrent characteristic including first and second voltage ranges where an absolute value of a current density increases as an absolute value of a bias voltage increases, and a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in the first and second voltage ranges, The voltage supply circuit applies a predetermined voltage between the gate electrode and the second region such that the bias voltage falls within the third voltage range. The signal detection circuit detects an electrical signal corresponding to a change of a capacitance of the photoelectric conversion layer.

Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a capacitance value of a first photoelectric converter in a state of receiving no incident light is Cpd1, a capacitance value between a first node and a first channel region is Cn1, a capacitance value of a second photoelectric converter in a state of receiving no incident light is Cpd2, and a capacitance value between a second node and a second channel region is Cn2.

Abstract: A preparation element set including an image sensor including a sensor surface, a sensor back surface, and a board; a package including a front surface, a back surface, and terminals on the back surface, the front surface touching or facing the sensor back surface; and a transparent plate facing the sensor surface with a subject placed therebetween, wherein the board includes a board surface and a board back surface, a distance between the board surface and the sensor surface is less than a distance between the board back surface and the sensor surface, a distance between the board surface and the sensor back surface is more than a distance between the board back surface and the sensor back surface, conductive holes pierce the board from the board surface to the board back surface, and conductors on the board surface are electrically connected to terminals by using the conductive holes.

Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.

Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a capacitance value of a first photoelectric converter in a state of receiving no incident light is Cpd1, a capacitance value between a first node and a first channel region is Cn1, a capacitance value of a second photoelectric converter in a state of receiving no incident light is Cpd2, and a capacitance value between a second node and a second channel region is Cn2.