Patents by Inventor Tom K. Cho

Tom K. Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9797037
    Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide has a composition of 40-45 mol % of Y2O3, 5-10 mol % of ZrO2, 35-40 mol % of Er2O3, 5-10 mol % of Gd2O3, and 5-15 mol % of SiO2.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: October 24, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
  • Publication number: 20170263487
    Abstract: A method and apparatus for discharging a residual charge from a substrate support. In one example, a substrate support is provided that includes a body, an electrode disposed in the body, a radiation emitter and a diffuser. The body has one or more holes formed in a workpiece support surface, the workpiece support surface configured to accept a substrate thereon. The electrode is configured to electrostatically hold a substrate to the workpiece support surface. The radiation emitter is disposed in a first hole of the one or more holes formed in the workpiece support surface. The radiation emitter is configured to emit electromagnetic energy out of the first hole. The diffuser is disposed in first hole over the radiation emitter.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 14, 2017
    Inventors: Wendell Glen BOYD, JR., Tom K. CHO, Robert T. HIRAHARA
  • Patent number: 9761416
    Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: September 12, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Andrew Nguyen, Bradley Howard, Shahid Rauf, Ajit Balakrishna, Tom K. Cho, Kenneth S. Collins, Anand Kumar, Michael D. Willwerth, Yogananda Sarode Vishwanath
  • Patent number: 9725799
    Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: August 8, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
  • Patent number: 9714465
    Abstract: Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: July 25, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lun Tsuei, Alan Tso, Tom K. Cho, Brian Sy-Yuan Shieh
  • Publication number: 20160326625
    Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.
    Type: Application
    Filed: July 15, 2016
    Publication date: November 10, 2016
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
  • Publication number: 20150293527
    Abstract: The present disclosure generally relates to process chambers having modular design to provide variable process volume and improved flow conductance and uniformity. The modular design according to the present disclosure achieves improved process uniformity and symmetry with simplified chamber structure. The modular design further affords flexibility of performing various processes or processing substrates of various sizes by replacing one or more modules in a modular process chamber according to the present disclosure.
    Type: Application
    Filed: April 2, 2015
    Publication date: October 15, 2015
    Inventors: Andrew NGUYEN, Yogananda SARODE VISHWANATH, Tom K. CHO
  • Publication number: 20150218697
    Abstract: The present disclosure generally relates to apparatus and methods for symmetry in electrical field, gas flow and thermal distribution in a processing chamber to achieve process uniformity. Embodiment of the present disclosure includes a plasma processing chamber having a plasma source, a substrate support assembly and a vacuum pump aligned along the same central axis to create substantially symmetrical flow paths, electrical field, and thermal distribution in the plasma processing chamber resulting in improved process uniformity and reduced skew.
    Type: Application
    Filed: February 2, 2015
    Publication date: August 6, 2015
    Inventors: Andrew NGUYEN, Yogananda SARODE VISHWANATH, Tom K. CHO
  • Patent number: 9089007
    Abstract: Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.
    Type: Grant
    Filed: February 14, 2013
    Date of Patent: July 21, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yao-Hung Yang, Jeonghoon Oh, Frank F. Hooshdaran, Tom K. Cho, Tao Hou
  • Publication number: 20150158775
    Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.
    Type: Application
    Filed: December 5, 2014
    Publication date: June 11, 2015
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
  • Publication number: 20150107618
    Abstract: A gas comprising oxygen is supplied to a plasma source. A plasma jet comprising oxygen plasma particles is generated from the gas. A contaminant is removed from the component using the oxygen plasma particles.
    Type: Application
    Filed: October 21, 2013
    Publication date: April 23, 2015
    Applicant: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Tom K. Cho, Ying Zhang
  • Publication number: 20140374024
    Abstract: Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes.
    Type: Application
    Filed: August 8, 2013
    Publication date: December 25, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: ANDREW NGUYEN, TOM K. CHO, KARTIK RAMASWAMY, YOGANANDA SARODE VISHWANATH
  • Publication number: 20140366953
    Abstract: Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening.
    Type: Application
    Filed: May 13, 2014
    Publication date: December 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: JARED AHMAD LEE, DMITRY LUBOMIRSKY, MARTIN JEFF SALINAS, ANDREW NGUYEN, TOM K. CHO, ERIC A. ENGLHARDT, FERNANDO SILVEIRA
  • Patent number: 8911151
    Abstract: A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring having a first inner edge, the first ring disposed in the aperture in an upper portion of the tubular body, and a second ring having a second inner edge, the second ring disposed in the aperture in a lower portion of the tubular body. In another aspect, the first inner edge has a first radius of curvature, and the second inner edge has a second radius of curvature. In another aspect, a first inner edge diameter, a second inner edge diameter, the first radius of curvature, and the second radius of curvature are selected such that a support pin extending through the aperture contacts the bushing assembly on at most two points.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: December 16, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Tao Hou, Jeonghoon Oh, Tom K. Cho, Andrzej Matlosz, Frank F. Hooshdaran, Yao-Hung Yang
  • Publication number: 20140272211
    Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.
    Type: Application
    Filed: March 7, 2014
    Publication date: September 18, 2014
    Inventors: Andrew NGUYEN, Bradley HOWARD, Shahid RAUF, Ajit BALAKRISHNA, Tom K. CHO, Kenneth S. COLLINS, Anand KUMAR, Michael D. WILLWERTH, Yogananda S. VISHWANATH
  • Publication number: 20130284721
    Abstract: Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber.
    Type: Application
    Filed: February 14, 2013
    Publication date: October 31, 2013
    Inventors: Yao-Hung Yang, Jeonghoon Oh, Frank F. Hooshdaran, Tom K. Cho, Tao Hou
  • Publication number: 20130287529
    Abstract: A substrate processing system with independent substrate placement capability to two or more substrate support assemblies is provided. Two different sets of fixed-length lift pins are disposed on two or more substrate support lift pin assemblies of two or more process chambers, where the length of each lift pin in one process chamber is different from the length of each lift pin in another process chamber. The substrate processing system includes simplified mechanical substrate support lift pin mechanisms and minimum accessory parts cooperating with a substrate transfer mechanism (e.g., a transfer robot) for efficient and independent loading, unloading, and transfer of one or more substrates between two or more processing regions in a twin chamber or between two or more process chambers. A method for positioning one or more substrates to be loaded, unloaded, or processed independently or simultaneously in two or more processing regions or process chambers is provided.
    Type: Application
    Filed: March 15, 2013
    Publication date: October 31, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Yao-Hung YANG, Jeonghoon OH, Frank F. HOOSHDARAN, Tom K. CHO, Tao HOU, Yuanhung GUO
  • Publication number: 20130012030
    Abstract: An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
    Type: Application
    Filed: March 17, 2010
    Publication date: January 10, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Annamalai Lakshmanan, Jianshe Tang, Dustin W. Ho, Francimar C. Schmitt, Alan Tso, Tom K. Cho, Brian Sy-Yuan Shieh, Hari K. Ponnekanti, Chris Eberspacher, Zheng Yuan
  • Publication number: 20130004681
    Abstract: Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate.
    Type: Application
    Filed: June 30, 2011
    Publication date: January 3, 2013
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Alan Tso, Jeonghoon Oh, Yi Zheng, Tom K. Cho, Zheng Yuan, Lin Zhang, Qunhua Wang, Robin L. Tiner
  • Publication number: 20120171852
    Abstract: Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm2 to the processing chamber, and forming a silicon containing layer on the substrate.
    Type: Application
    Filed: August 2, 2010
    Publication date: July 5, 2012
    Inventors: Zheng Yuan, Mandar B. Pandit, Francimar C. Schmitt, Yi Zheng, Fan Yang, Lipan Li, Alan Tso, Dustin W. Ho, Tom K. Cho, Randhir Thakur